Surface properties of polymers and competition adsorption of toluene and heptane on silica were studied using IR-visible sum frequency generation (SFG) vibrational spectroscopy. SFG is intrinsically surface sensitive because the second-order optical process is forbidden in media with inversion symmetry, such as bulk polymers and liquids. This nonlinear optical technique provides surface vibrational spectra under ambient conditions without the need of an ultra-high vacuum environment. Polymer surface properties, including surface relaxation temperature of poly(methyl methacrylate) (PMMA) and surface electronic states of poly[2-methoxy, 5-ethyl (2’-hexyloxy) para phenylenevinylene] (MEH-PPV), were investigated. It was found that there are significant differences between the surface and bulk properties for these polymers. For PMMA, a new surface structure relaxation was identified at 67°C, which does not match any known structure relaxation temperatures for bulk PMMA and is 40°C below the bulk glass transition temperature. For MEH-PPV, SFG electronic spectra, which were obtained by scanning the frequencies of incident visible and JR beams, indicated that the electronic states at the polymer/solid and air/polymer interfaces are red-shifted with respect to that of the bulk. Finally, SFG was employed to study the competition adsorption of toluene and heptane on silica surfaces. Experimental data showed that heptane adsorbed favorably compared to toluene. Using a Langmuir adsorption isotherm, the changes of Gibbs free energy for the adsorption processes were calculated to be —12.1 ± 1.8 (kJ/mol) for toluene and —16.5 ± 2.3 (kJ/mol) for heptane.

A theoretical treatment is presented of a plasmonic interaction at an interface between a semiconductor and a dielectric, as opposed to the more traditional configuration whereby a metal/dielectric interface is investigated. Our work is to show that structures using semiconductors instead of metal to excite surface plasmon can support not only terahertz frequencies plasmons but also optical frequency (around 10 to power of 15 Hz) plasmons. / Thesis

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This thesis focuses on the design of radio-frequency (RF) mixers, including a broadband downconverter mixer, an upconverter mixer and a downconverter mixer with high linearity. The basic mixer topology used in this thesis was the Gilbert cell mixer, which is the most popular mixer topology in modern communication systems. In order to accommodate different applications, the broadband mixer and the upconverter mixer were designed to be reconfigurable. First, a broadband downconverter mixer with variable conversion gain was designed using 0.13-$\mu m$ CMOS technology. The mixer worked from 2 to 10 GHz. By changing the effective transistor size of the transconductor and the load, the mixer was able to work in three different modes with different conversion gain and power consumption. Second, an upconverter mixer with sideband selection was demonstrated in CMOS 0.13-$\mu$m technology. The transmitted sideband could be chosen to be the upper sideband or the lower sideband. The mixer worked at 5 GHz with a 100 MHz IF. The measured voltage conversion gains were 11.2 dB at 4.9 GHz and 12.4 dB at 5.1 GHz. The best sideband rejection was around 30 dB. Third, a modified derivative superposition (DS) technique was used to linearize a Gilbert cell mixer. Simulation results predicted an IIP3 improvement of 12.5 dB at 1 GHz. After linearization, the noise figure of the mixer increased by only 0.7 dB and the conversion gain decreased by 0.3 dB. The power consumption of the mixer increased by 0.96 mW. / Thesis (Master, Electrical & Computer Engineering) -- Queen's University, 2010-06-18 14:40:35.062

A frequency selective surface (FSS) based on switchable slots in the ground plane is presented. The switching is done using an actuating MEMS bridge over the slot. The intent is to demonstrate the control of the resonance frequency of the FSS by deflecting the bridge. It is shown that by applying a voltage between the bridge and the ground plane, the bridge displaces and changes the system capacitance which in turn changes the resonance frequency. Two analyses are presented; (1) Electromechanical analysis to show how the bridge deflects by the voltage, (2) Electromagnetic analysis to show how the resonance frequency changes by the bridge deflection. The device was fabricated and tested. The measurement results are presented for two up and down positions of the MEMS bridge to verify the correctness of the theory and design.

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