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Faradėjaus efekto tyrimai siauratarpiuose puslaidininkiuose: optinė alternatyva Holo matavimams / Faraday rotation analysis of narrow gap semiconductors: an optical alternative to the Hall testClarke, Frederick Walter 11 May 2006 (has links)
The main aim of this work was to develop a method of screening HgCdTe materials for carrier concentration and mobility using Faraday rotation θ and absorption α. Faraday rotation provides N/m*2, where N is the carrier concentration and m* is the effective mass. Since m* was not known in HgCdTe, a Faraday rotation spectrometer was developed to systematically measure it as a function of temperature and Cd mole fraction. Effective masses in n-InSb, and n-GaAs were measured and compared with known values in the literature to validate the method. Mobility is proportional to θ/α. The proportionalities were determined in HgCdTe, n-InSb, and n-GaAs at infrared wavelengths. The dissertation consists of the preface, introduction, three chapters, summary and main conclusions, references, list of publications and abstract (in Lithuanian).
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Faradėjaus efekto tyrimai siauratarpiuose puslaidininkiuose: optinė alternatyva Holo matavimams / Faraday rotation analysis of narrow gap semiconductors: an optical alternative to Hall testClarke, Frederick Walter 12 May 2006 (has links)
The main aim of this work was to develop a method of screening HgCdTe materials for carrier concentration and mobility using Faraday rotation θ and absorption α. Faraday rotation provides N/m*2, where N is the carrier concentration and m* is the effective mass. Since m* was not known in HgCdTe, a Faraday rotation spectrometer was developed to systematically measure it as a function of temperature and Cd mole fraction. Effective masses in n-InSb, and n-GaAs were measured and compared with known values in the literature to validate the method. Mobility is proportional to θ/α. The proportionalities were determined in HgCdTe, n-InSb, and n-GaAs at infrared wavelengths.
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