Vacuum microelectronic (VME) devices are of interest for the development of flat-screen displays and microwave devices. In many cases, their operation depends on the field emission of electrons from micron-sized cathodes (semiconductor or metal), into a vacuum. Major challenges to be met before these devices can be fully exploited include obtaining - low operating voltages, high maximum emission currents, uniform emission characteristics, and long-term emission stability. The research in this thesis concerns the production of silicon field emitters and the improvement of their emission properties by the process of anodisation. Anodisation was carried out for short times, in order to form a very thin layer of porous silicon (PS) at the surface of both p and p⁺-type silicon emitters. The aim in doing this was to form a high density of asperities over the surface of the emitters. It was the intention that these asperities, rather than the "macroscopic" apex of the emitter, would control emission. This was the first work of its kind to be carried out. Transmission electron microscopy was used to characterise the morphology of p and p⁺-type silicon emitters before and after anodisation. Both the structure and arrangement of the surface fibrils, the thickness of the PS layers at the apex and nature of PS cross-sections were studied. The morphology was correlated to subsequent field emission measurements. Field emission characteristics, before and after anodisation, were obtained using a scanning electron microscope adapted for field emission measurements, and a field emission microscope. Extensive measurements showed that, following anodisation, there was substantial improvement in emission behaviour. After anodisation, the following was found to be true: i) The starting voltage was reduced by up to 50% (with p<sup>+</sup -type PS emitters exhibiting a greater reduction in starting voltage than p-type PS emitters). ii) Number of emitting tips per array was increased. iii) Higher maximum currents (up to 3 times higher) were obtained before tips underwent destruction. iv) The resistive effect of the PS layer at the apex was important in determining the maximum current obtained from a tip. In addition, both field emission and field ion microscopy were used to identify the emission source following anodisation. It was shown that individual fibrils on the emission surface caused an increase in field enhancement over a flat plane, leading to emission at lower voltage. Overall, porous silicon appears to be a very promising material for field emission displays.