Flip-chip underfilling is a technology by which silica-filled epoxy resin is used to fill the micro-cavity between a silicon chip and a substrate, by dispensing the liquid encapsulant at elevated temperatures along the periphery of one or two sides of the chip and then allowing capillary action to draw the material into the gap. Since the chip, underfill material, and substrate solidify together as one unit, thermal stresses on solder joints during the temperature cycling (which are caused by a mismatch in the coefficients of thermal expansion between the silicon chip and the organic substrate) can be redistributed and transferred away from the fragile bump zone to a more strain-tolerant region. Modeling of the flow behaviour of a fluid in the underfill process is the key to this technology. One of the most important drawbacks in the existing models is inadequate treatment of non-Newtonian fluids in the underfill process in the development of both analytical models and numerical models. Another important drawback is the neglect of the presence of solder bumps in the existing analytical models. This thesis describes a study in which a proper viscosity constitutive equation, power-law model, is employed for describing the non-Newtonian fluid behaviour in flip-chip package. Based on this constitutive equation, two analytical models with closed-form solutions for predicting the fluid filling time and fluid flow front position with respect to time were derived. One model is for a setting with two parallel plates as an approximate to flip-chip package, while the other model is for a setting with two parallel plates within which an array of solder bumps are present. Furthermore, a numerical model using a general-purpose finite element package ANSYS was developed to predict the fluid flow map in two dimensions. The superiority of these models to the existing models (primarily those developed at Cornell University in 1997) is confirmed based on the results of the experiments conducted in this study. This thesis also presents a finding of the notion of critical clearance in the design of a flip-chip package through a careful simulation study using the models developed. The flip-chip package design should make the clearance between solder bumps larger than the critical clearance.

Flip-chip underfilling is a technology by which silica-filled epoxy resin is used to fill the micro-cavity between a silicon chip and a substrate, by dispensing the liquid encapsulant at elevated temperatures along the periphery of one or two sides of the chip and then allowing capillary action to draw the material into the gap. Since the chip, underfill material, and substrate solidify together as one unit, thermal stresses on solder joints during the temperature cycling (which are caused by a mismatch in the coefficients of thermal expansion between the silicon chip and the organic substrate) can be redistributed and transferred away from the fragile bump zone to a more strain-tolerant region. Modeling of the flow behaviour of a fluid in the underfill process is the key to this technology. One of the most important drawbacks in the existing models is inadequate treatment of non-Newtonian fluids in the underfill process in the development of both analytical models and numerical models. Another important drawback is the neglect of the presence of solder bumps in the existing analytical models. This thesis describes a study in which a proper viscosity constitutive equation, power-law model, is employed for describing the non-Newtonian fluid behaviour in flip-chip package. Based on this constitutive equation, two analytical models with closed-form solutions for predicting the fluid filling time and fluid flow front position with respect to time were derived. One model is for a setting with two parallel plates as an approximate to flip-chip package, while the other model is for a setting with two parallel plates within which an array of solder bumps are present. Furthermore, a numerical model using a general-purpose finite element package ANSYS was developed to predict the fluid flow map in two dimensions. The superiority of these models to the existing models (primarily those developed at Cornell University in 1997) is confirmed based on the results of the experiments conducted in this study. This thesis also presents a finding of the notion of critical clearance in the design of a flip-chip package through a careful simulation study using the models developed. The flip-chip package design should make the clearance between solder bumps larger than the critical clearance.

Electromigration (EM) and thermomigration (TM) reliability of Pb-free solder joints are emerging as critical concerns in advanced packages. In this study, EM and TM phenomena in Sn-2.5Ag solder joints with thick Cu or thin Ni under-bump metallurgy (UBM) were investigated. A series of EM tests were performed to obtain activation energy (Q) and current density exponent (n), and to understand failure mechanisms. Joule heating was also taken into account. Q and n values were determined as follows: for Cu UBM solders, Q = 1.0 eV and n = 1.5; for Ni UBM solders, Q = 0.9 and n = 2.2. Important factors limiting EM reliability of Pb-free solder joints were found to be UBM dissolution with extensive intermetallic compound (IMC) growth and current crowding. IMC growth without current stressing was found to follow the parabolic growth law whereas linear growth law was observed for Cu₆Sn₅ and Ni₃Sn₄ under high current stressing. For Cu UBM solders, the apparent activation energy for IMC growth was consistent with the activation energy for EM, which supports that EM failure was closely related to IMC growth. In contrast, for Ni UBM solders the apparent activation energy was higher than the EM activation energy. It was suggested that the EM failure in the Ni UBM solders could be associated with more than one mass transport mechanism. The current crowding effect was analyzed with different thicknesses of Ni UBM. It was found that the maximum current density in solder could represent the current density term in Black's equation better than the average current density. FEM studies demonstrated that current crowding was mainly controlled by UBM thickness, metal trace design, and passivation opening diameter. A large temperature gradient of the order of 10³ °C/cm was generated across the sample to induce noticeable TM and to compare its effect against that of EM. TM-induced voiding was observed in Ni UBM solders while UBM dissolution with IMC formation occurred in Cu UBM solders. However, the relative effect of TM was found to be several times smaller than that of EM even at this large temperature gradient. / text