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Efeito terapeutico da irradiacao com laser de arseneto de galio aluminium (lambda = 830nm) em lesoes provocadas pelo aparelho ortodontico fixo na cavidade oralRODRIGUES, MARIA T.J. 09 October 2014 (has links)
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Estudo histopatologico dos efeitos da irradiacao laser em baixa intensidade (lambda = 650 nm) em tecido pulpar apos preparo cavitarioBERTELLA, CLAUDIO 09 October 2014 (has links)
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Avaliacao da reducao bacteriana em conduto radicular infectado e irradiado com laser de diodo estudo in vitroRADAELLI, CLAUDIA A.R. de M. 09 October 2014 (has links)
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Reducao de processo inflamatorio com aplicacao de laser de arseneto de galio aluminio (lambda=830nm) em pos-operatorio de exodontias de terceiros molares inferiores inclusos ou semi-inclusosATIHE, MAURICIO M. 09 October 2014 (has links)
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Photomodulated reflectance spectroscopy of novel semiconductor materialsRowland, Gareth Llywelyn January 1999 (has links)
Room temperature photomodulated reflectance (PR), Photoluminescence (PL) and double crystal x-ray diffraction (DCXRD) measurements have been performed on a series of tensilely strained InxGa1-xAs (0.316 ≤ x ≤ 0.533) multiple quantum well (QW) structures, with In0.80Ga0.20As0.43P0.57 barriers. The DCXRD measurements provided accurate information on composition, strain and layer thickness, while PR was used to determine the energies of the full manifold of allowed and forbidden critical point interband QW transitions. A three-band effective mass formalism was used to model the QW transitions to derive structural information on each sample. The energies of the ground-state QW transitions, H11 and L11, were found to increase with tensile strain, becoming degenerate near 0.36% tensile strain. Room temperature PR and conventional reflectance (R) measurement have been performed on two I.R. emitting InGaAs/GaAs/A1As vertical cavity surface emitting laser (VCSEL) structures. The R measurements were modelled using a transfer matrix formalism to determine errors in the growth fluxes. A new PR lineshape model has been developed based on energy dependent Seraphin coefficients, to describe the cavity mode interaction with a confined-state QW transition. The model is demonstrated on a set of PR spectra, and used in a novel way to derive the Deltaepsilon2 spectrum of the QW layers directly. The results are compared with those taken of the QW layers directly after removing the top Bragg stack reflector. Whilst the QW layers in one sample were found to be close to nominal, the in composition of QW in the other sample was found to depart significantly from the nominal 23%, and was found to be 28%. Room temperature and ~ 80K PR measurements were performed on three InAs/GaAs self-assembled quantum dot (QD) structures: a sample with a single layer of QDs, and two with two layers. The PR revealed five equally spaced confined-state QD transitions, at both 80K and room temperature, with ~ 54 meV separation. The behaviour of the QD1 transition as a function of temperature was investigated and an anomalous increase in linewidth was observed on cooling. Annealing of one of the samples produced a strong blue shift (~ 250 meV) and narrowing of the QD transitions.
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Near infrared cathodoluminescence of III-V heterostructuresZanotti-Fregonara, Carlo Luigi Maria January 1998 (has links)
No description available.
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Coherency strain and a new yield criterion. : 'the Frogley conjecture'Jayaweera, Nicholas Benjamin January 2000 (has links)
No description available.
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III-V semiconducting hopping bolometers for detecting nonequilibrium phonons and astroparticlesTaele, Benedict Molibeli January 2000 (has links)
No description available.
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Wide bandgap collector III-V double heterojunction bipolar transistorsFlitcroft, Richard M. January 2000 (has links)
No description available.
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InGaAsP quantum well cells for thermophotovoltaic applicationsRohr, Carsten January 2000 (has links)
No description available.
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