Gas source molecular beam epitaxy (GSMBE) has been used to grow InGaAs/lnP epitaxial layers in selected areas defined by SiO2-masked InP substrates, with the goal of obtaining controlled in-plane variations in the bandgap of the InGaAs wells. The ability to alter the bandgap of the semiconductor spatially over the surface in one growth procedure is desirable for integrating laser, waveguide and detector devices. To form the masked substrates, stripes (ranging in width from 2 pm to 50 pm) were opened up in SiO2 by standard photolithography. The crystal growths were carried out at various substrate temperatures (ranging from 460 °C to 510 °C) and arsenic fluxes (V/lll ratios ranging from 1.2 to 3.4). The properties of the epitaxial layers were investigated by using such analytical techniques as photoluminescence, electroluminescence and transmission electron microscopy (TEM). Photoluminescence measurements performed on waveguide stripes of decreasing width reveal an increasing red-shift of the e1-hh1 transition in InGaAs wells. The maximum red-shift occurred when growing at a high substrate temperature and a low arsenic flux. For example, a decrease in slit width from 50 pm to 10 pm resulted in a 25 meV shift of the photoluminescence peak. From cross-sectional TEM measurements, the wavelength shift observed can be attributed primarily to an increase in thickness of the InGaAs well, due to incorporation of additional indium and gallium migrating from the material on the masked regions. The interfaces in the centre of the stripe region are defect free; however, stacking faults and thickness variations are evident 1-2 pm from the edges. These results are confirmed by scanning photoluminescence, in which the maximum intensity occurs at the centre of the stripe and decreases to zero at the edges. Mapping of the peak wavelength across the stripe reveals a diffusion profile, with the edges being additionally red shifted by 10 nm. Reactive ion etching of the edge and the polycrystalline material results in a much improved spectral photoluminescence scan, in both increased intensity of the bandgap peak and elimination of lower energy peaks assumed to be correlated with edge effects. Finally, a stripe contact light emitting device, with a single 50 A quantum well InGaAs/lnP structure, was fabricated and electrically pumped. The device exhibited spectral peak wavelength shifts between narrow stripes (10 pm) and wide stripes (50 pm) of 22 nm, similar to the value observed by photoluminescence studies. / Thesis / Master of Engineering (ME)

Gas source molecular beam epitaxy (GSMBE) has been used to grow InGaAs/lnP epitaxial layers in selected areas defined by SiO2-masked InP substrates, with the goal of obtaining controlled in-plane variations in the bandgap of the InGaAs wells. The ability to alter the bandgap of the semiconductor spatially over the surface in one growth procedure is desirable for integrating laser, waveguide and detector devices. To form the masked substrates, stripes (ranging in width from 2 pm to 50 pm) were opened up in SiO2 by standard photolithography. The crystal growths were carried out at various substrate temperatures (ranging from 460 °C to 510 °C) and arsenic fluxes (V/lll ratios ranging from 1.2 to 3.4). The properties of the epitaxial layers were investigated by using such analytical techniques as photoluminescence, electroluminescence and transmission electron microscopy (TEM). Photoluminescence measurements performed on waveguide stripes of decreasing width reveal an increasing red-shift of the e1-hh1 transition in InGaAs wells. The maximum red-shift occurred when growing at a high substrate temperature and a low arsenic flux. For example, a decrease in slit width from 50 pm to 10 pm resulted in a 25 meV shift of the photoluminescence peak. From cross-sectional TEM measurements, the wavelength shift observed can be attributed primarily to an increase in thickness of the InGaAs well, due to incorporation of additional indium and gallium migrating from the material on the masked regions. The interfaces in the centre of the stripe region are defect free; however, stacking faults and thickness variations are evident 1-2 pm from the edges. These results are confirmed by scanning photoluminescence, in which the maximum intensity occurs at the centre of the stripe and decreases to zero at the edges. Mapping of the peak wavelength across the stripe reveals a diffusion profile, with the edges being additionally red shifted by 10 nm. Reactive ion etching of the edge and the polycrystalline material results in a much improved spectral photoluminescence scan, in both increased intensity of the bandgap peak and elimination of lower energy peaks assumed to be correlated with edge effects. Finally, a stripe contact light emitting device, with a single 50 A quantum well InGaAs/lnP structure, was fabricated and electrically pumped. The device exhibited spectral peak wavelength shifts between narrow stripes (10 pm) and wide stripes (50 pm) of 22 nm, similar to the value observed by photoluminescence studies. / Thesis / Master of Engineering (ME)