abstract: In this work, an advanced simulation study of reliability in millimeter-wave (mm-wave) GaN Devices for power amplifier (PA) applications is performed by means of a particle-based full band Cellular Monte Carlo device simulator (CMC). The goal of the study is to obtain a systematic characterization of the performance of GaN devices operating in DC, small signal AC and large-signal radio-frequency (RF) conditions emphasizing on the microscopic properties that correlate to degradation of device performance such as generation of hot carriers, presence of material defects and self-heating effects. First, a review of concepts concerning GaN technology, devices, reliability mechanisms and PA design is presented in chapter 2. Then, in chapter 3 a study of non-idealities of AlGaN/GaN heterojunction diodes is performed, demonstrating that mole fraction variations and the presence of unintentional Schottky contacts are the main limiting factor for high current drive of the devices under study. Chapter 4 consists in a study of hot electron generation in GaN HEMTs, in terms of the accurate simulation of the electron energy distribution function (EDF) obtained under DC and RF operation, taking into account frequency and temperature variations. The calculated EDFs suggest that Class AB PAs operating at low frequency (10 GHz) are more robust to hot carrier effects than when operating under DC or high frequency RF (up to 40 GHz). Also, operation under Class A yields higher EDFs than Class AB indicating lower reliability. This study is followed in chapter 5 by the proposal of a novel π-Shaped gate contact for GaN HEMTs which effectively reduces the hot electron generation while preserving device performance. Finally, in chapter 6 the electro-thermal characterization of GaN-on-Si HEMTs is performed by means of an expanded CMC framework, where charge and heat transport are self-consistently coupled. After the electro-thermal model is validated to experimental data, the assessment of self-heating under lateral scaling is considered. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2018

Auxiliary power supply (APS) plays a key role in ensuring the safe operation of the main circuit elements including gate drivers, sensors, controllers, etc. in medium voltage (MV) silicon carbide (SiC)-based converter systems. Such a converter requires APS to have high insulation capability, low common-mode coupling capacitance (Ccm ), and high-power density. Furthermore, considering the lifetime and simplicity of the auxiliary power supply system design in the MV converter, partial discharge (PD) free and multi-load driving ability are the additional two factors that need to be addressed in the design. However, today’s state-of-the-art products have either low power rating or bulky designs, which does not satisfy the demands. To improve the current designs, this thesis presents a 1 MHz isolated APS design using gallium nitride (GaN) devices with MV insulation reinforcement. By adopting LCCL-LC resonant topology, the proposed APS is able to supply multiple loads simultaneously and realize zero voltage switching (ZVS) at any load conditions. Since high reliability under faulty load conditions is also an important feature for APS in MV converter, the secondary side circuit of APS is designed as a regulated stage. To achieve MV insulation (> 20 kV) as well as low Ccm value (< 5 pF), a current-based transformer with a single turn structure using MV insulation wire is designed. Furthermore, by introducing different insulated materials and shielding structures, the APS is capable to achieve different partial discharge inception voltages (PDIV). In this thesis, the transformer design, resonant converter design, and insulation strategies will be detailly explained and verified by experiment results. Overall, this proposed APS is capable to supply multiple loads simultaneously with a maximum power of 120 W for the sending side and 20 W for each receiving side in a compact form factor. ZVS can be realized regardless of load conditions. Based on different insulation materials, two different receiving sides were built. Both of them can achieve a breakdown voltage of over 20 kV. The air-insulated solution can achieve a PDIV of 6 kV with Ccm of 1.2 pF. The silicone-insulated solution can achieve a PDIV of 17 kV with Ccm of 3.9 pF. / M.S. / Recently, 10 kV silicon carbide (SiC) MOSFET receives strong attention for medium voltage applications. Asit can switch at very high speed, e.g. > 50 V/ns, the converter system can operate at higher switching frequency condition with very small switching losses compared to silicon (Si) IGBT [8]. However, the fast dv/dt noise also creates the common mode current via coupling capacitors distributed inside the converter system, thereby introducing lots of electromagnetic interference (EMI) issues. Such issues typically occur within the gate driver power supplies due to the high dv/dt noises across the input and output of the supply. Therefore, the ultra-small coupling capacitor (<5 pF) of a gate driver power supply is strongly desired.[37] To satisfy the APS demands for high power modular converter system, a solution is proposed in this thesis. This work investigates the design of 1 MHz isolated APS using gallium nitride (GaN) devices with medium voltage insulation reinforcement. By increasing switching frequency, the overall converter size could be reduced dramatically. To achieve a low Ccm value and medium voltage insulation of the system, a current-based transformer with a single turn on the sending side is designed. By adopting LCCL-LC resonant topology, a current source is formed as the output of sending side circuity, so it can drive multiple loads importantly with a maximum of 120 W. At the same time, ZVS can use realized with different load conditions. The receiving side is a regulated stage, so the output voltage can be easily adjusted and it can operate in a load fault condition. Different insulation solutions will be introduced and their effect on Ccm will be discussed. To further reduce Ccm, shielding will be introduced. Overall, this proposed APS can achieve a breakdown voltage of over 20 kV and PDIV up to 16.6 kV with Ccm<5 pF. Besides, multi-load driving ability is able to achieve with a maximum of 120 W. ZVS can be realized. In the end, the experiment results will be provided.

The recent application of semiconductor materials, such as GaN, to power electronics has led to the development of a new generation of devices, which promise lower losses, higher operating frequencies and reductions in equipment size. The aim of this research is to study the capabilities of emerging GaN power devices, to understand their advantages, drawbacks, the challenges of their implementation and their potential impact on the performance of power converters. The thesis starts by presenting the development of a simple model for the switching transients of a GaN cascode device under inductive load conditions. The model enables accurate predictions to be made of the switching losses and provides an understanding of the switching process and associated energy flows within the device. The model predictions are validated through experimental measurements. The model reveals the suitability of the cascode device to soft-switching converter topologies. Two GaN cascode transistors are characterised through experimental measurement of their switching parameters (switching speed and switching loss). The study confirms the limited effect of the driver voltage and gate resistance on the turn-off switching process of a cascode device. The performance of the GaN cascode devices is compared against state-of-the-art super junction Si transistors. The results confirm the feasibility of applying the GaN cascode devices in half and full-bridge circuits. Finally, GaN cascode transistors are used to implement a 270V - 28V, 1.5kW, 1 MHz phase-shifted full-bridge isolated converter demonstrating the use of the devices in soft-switching converters. Compared with a 100 kHz silicon counterpart, the magnetic component weight is reduced by 69% whilst achieving a similar efficiency of 91%.

No description available.