Made available in DSpace on 2014-12-17T15:15:02Z (GMT). No. of bitstreams: 1 FranciscoOA.pdf: 1713095 bytes, checksum: 1ee138883bf7b4da570838f6654b21b0 (MD5) Previous issue date: 2006-12-15 / Conselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico / In the present work we use a plasma jet system with a hollow cathode to deposit thin TiO2 films on silicon substrates as alternative at sol-gel, PECVD, dip-coating e magnetron sputtering techniques. The cylindrical cathode, made from pure titanium, can be negatively polarized between 0 e 1200 V and supports an electrical current of up to 1 A. An Ar/O2 mixture, with a total flux of 20 sccm and an O2 percentage ranging between 0 and 30%, is passed through a cylindrical hole machined in the cathode. The plasma parameters and your influence on the properties of deposited TiO2 films and their deposition rate was studied. When discharge occurs, titanium atoms are sputtered/evaporated. They are transported by the jet and deposited on the Si substrates located on the substrate holder facing the plasma jet system at a distance ranging between10 and 50 mm from the cathode. The working pressure was 10-3 mbar and the deposition time was 10 -60 min. Deposited films were characterized by scanning electron microscopy and atomic force microscopy to check the film uniformity and morphology and by X-ray diffraction to analyze qualitatively the phases present. Also it is presented the new dispositive denominate ionizing cage, derived from the active screen plasma nitriding (ASPN), but based in hollow cathode effect, recently developed. In this process, the sample was involved in a cage, in which the cathodic potential was applied. The samples were placed on an insulator substrate holder, remaining in a floating potential, and then it was treated in reactive plasma in hollow cathode regime. Moreover, the edge effect was completely eliminated, since the plasma was formed on the cage and not directly onto the samples and uniformity layer was getting in all sampl / Filmes finos de TiO2 foram depositados sobre substrato de sil?cio usando descarga em c?todo oco. A presente t?cnica foi usada como alternativa a outras t?cnicas como solgel, PECVD, dip-coating e magnetron sputtering. O sistema desenvolvido apresenta uma configura??o de c?todo oco cil?ndrico polarizado com tens?o DC variando entre 0 e 1200V e corrente de at? 1 A. Um jato de plasma de Ar + O2, extrai ?tomos do mesmo, que s?o em seguida depositados sobre um substrato frontalmente posicionado. As amostras s?o posicionadas a dist?ncias do c?todo variando entre 10 e 50 mm. Foram investigadas os par?metros do plasma e sua influ?ncia sobre as propriedades dos filmes depositados. Os par?metros de trabalho para deposi??o de TiO2 foram 20sccm de fluxo da mistura Ar/O2 com percentuais de oxig?nio variando entre 0 -30%, press?o de trabalho 10-3 mbar e tempos de deposi??o de 10 -60 minutos. As amostras foram caracterizadas por microscopia eletr?nica de varredura e microscopia de for?a at?mica para verificar sua uniformidade e morfologia e por difra??o de raios-x para an?lise qualitativa das fases presentes nos filmes. Neste trabalho tamb?m ? apresentado um novo dispositivo, denominado gaiola ionizante, derivada da nitreta??o a plasma em tela ativa (ASPN), mas baseado no efeito de c?todo oco, recentemente desenvolvido. Neste processo as amostras s?o envolvidas por uma gaiola, na qual ? aplicada a diferen?a de potencial, permanecendo em potencial flutuante, sendo tratadas numa regi?o livre da influ?ncia do campo el?trico por um plasma reativo, operando em regime de c?todo oco. Dessa forma foram obtidas camadas uniformes em todas as amostras e eliminados defeitos como o efeito de borda