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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.

Spin photocurrent induced by interband transition

Dai, Junfeng, 戴俊峰 January 2010 (has links)
published_or_final_version / Physics / Doctoral / Doctor of Philosophy

Investigations of some defects in GaAs and some transport properties of GaAs/(AlGa)As heterojunctions

Bousbahi, K. January 1985 (has links)
No description available.

GaAs monolithic control devices and circuits

Tayrani, R. January 1986 (has links)
No description available.

Growth and characterization of GaAsN compound semiconductors /

Yun, Henry K. January 2001 (has links)
Thesis (Ph. D.)--University of Washington, 2001. / Vita. Includes bibliographical references (leaves 163-168).

Effets sur l'As-Ga d'une bande d'impuretés à basse temperature

Benzaquen, M. (Moïses) January 1984 (has links)
No description available.

Electrical characterization of epitaxial layers of gallium arsenide /

Khatwani, Rani, January 1988 (has links)
Thesis (M.S.)--Oregon Graduate Center, 1988.

A mechanism for recoverable power drift in PHEMTs /

Leoni, Robert E. January 1998 (has links)
Thesis (Ph. D.)--Lehigh University, 1998. / Includes vita. Includes bibliographical references (leaves 56-61).

Threshold extension of gallium arsenide/aluminum gallium arsenide terahetrz detectors and switching in heterostructures

Rinzan, Mohamed Buhary. January 2006 (has links)
Thesis (Ph. D.)--Georgia State University, 2006. / Title from title screen. Unil Perera, committee chair; Donald Edwards, Gennady Cymbaluyk, Mark Stockman, Nikolaus Dietz, Paul Wiita, committee members. Electronic text (348, 24-32 p. : ill.) : digital, PDF file. Description based on contents viewed June 8, 2007. Includes bibliographical references (p. 24-30, second sequence).

On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb

Murape, Davison Munyaradzi January 2014 (has links)
Since the development of the transistor in the Bell Telephone Laboratories in 1948 [78], the semiconductor industry has transformed the world we live in. It is difficult to picture a world without the modern day cutting edge technology. Imagine performing every day functions without “trivial” devices such as computers, cell phones or microwave ovens. The ability to tailor the band gaps of various binary, ternary and quaternary semiconductor systems has opened up a whole new spectrum of potential purpose designed devices [27]. This thesis focuses on the electronic properties of gallium (III) antimonide (V). The antimonides, in general, have the smallest band gap and highest electron mobility of the III-V compound semiconductors and are well suited for long wavelength emission and detection as well as high frequency switching device applications. Furthermore, III-V ternaries and quaternaries, such as (AlGaIn)(AsSb), lattice matched to gallium antimonide (GaSb) are considered serious competitors for HgCdTe and PbSe in long-wavelength infrared (LWIR) and very long-wavelength infrared (VLWIR) technology [4, 10, 11]. Epitaxial material systems based on GaSb are suitable for a wide range of applications such as missile and surveillance systems and a host of other military and civil applications. In addition, an assortment of devices on InAs, GaSb, and AlSb, including resonant tunnelling devices, infrared detectors and mid-infrared semiconductor lasers have been demonstrated [14, 15]. Furthermore, antimonide based devices could potentially reduce optical fibre power loss by a few orders of magnitude, as their implementation can lead to use of non-silica based optical fibres that minimise Raleigh scatter related power loss [8]. GaSb related technology faces a number of challenges. A significant amount of effort is required to exploit the potential it offers. GaSb oxidises readily in the ambient, resulting in the formation of a native oxide layer as well as deposits of elemental antimony (Sb) at the oxide/substrate interface therefore it has poor surface electronic properties resulting from high surface state densities[4, 17, 18]. As grown GaSb is characterised by a high density of surface states of which many are classified as non-radiative (Auger) recombination centres. The elemental Sb layer constitutes an unwanted conduction path parallel to the active surface region [17]. The potential that GaSb and GaSb-based strained layer superlattices offer as successors to the current generation of LWIR and VLWIR optoelectronic materials has therefore been largely impeded [4]. Furthermore, processing steps in device fabrication leads to an unintentionally damaged GaSb surface exacerbating the situation. Any efforts to engineer devices of superior quality on GaSb have to address these and more material specific problems [19]. This study attempts to contribute towards an improved understanding of the structural and electrical properties of the near surface region of Te-doped bulk (100) and MOVPE grown epitaxial Te doped n- GaSb. The main focus of this study is to develop means to de-oxidise and stabilize the highly reactive GaSb surface and to develop diode structures to demonstrate the improved interface characteristics and use related current–voltage (I-V) measurements to quantify the surface state density before and after treatment. These devices were also used to probe the near surface region for electrically active deep level defects that often act as non-radiative recombination centers. Au, Pd and Al were used as metals to establish a metal semiconductor barrier and subsequent depletion region. Sulphur based chemicals, ([(NH4)2S / (NH4)2SO4] + S), not previously reported for the treatment of (100) n-GaSb surfaces, and the commonly used passivants Na2S:9H2O and (NH4)2S were compared by assessing the electrical and structural properties both before and after treatment. The effect of treatment on the electrical response of the material was determined using current-voltage, capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements, while the surface morphology and composition were studied by SEM, AES and XPS.

Radiation damage in GaAs and SiC

Janse van Vuuren, Arno January 2011 (has links)
In this dissertation the microstructure and hardness of phosphorous implanted SiC and neutron irradiated SiC and GaAs have been investigated. SiC is important due to its application as a barrier coating layer in coated particle fuel used in high temperature gas cooled reactors. The characterisation of neutron irradiated GaAs has been included in this study in order to compare the radiation damage produced by protons and neutrons since proton bombardment of SiC could in principle be used for out-of-reactor simulations of the neutron irradiation damage created in SiC during reactor operation. The following SiC and GaAs compounds were investigated: As-implanted and annealed single crystal 6H-SiC wafers and polycrystalline 3C-SiC bulk material implanted with phosphorous ions. As-irradiated and annealed polycrystalline 3C-SiC bulk material irradiated with fast neutrons. As-irradiated and annealed single crystal GaAs wafers irradiated with fast neutrons. The main techniques used for the analyses were transmission electron microscopy (TEM) and nano-indentation hardness testing. The following results were obtained for the investigation of implanted and irradiated SiC and GaAs: Phosphorous Implanted 6H-SiC and 3C-SiC The depth of the P+ ion damage was found to be in good agreement with predictions by TRIM 2010. Micro-diffraction of the damage region in P+ implanted 6H-SiC (dose 5×1016 ions/cm2) indicates that amorphization occurred and that recrystallisation of this layer occurred during annealing at 1200°C. TEM analysis revealed that the layer recrystallised in the 3C phase of SiC and twin defects also formed within the layer. Micro-diffraction of the damage region in P+ implanted 3C-SiC (dose 1×1015 ions/cm2) indicates that amorphization also occurred for this sample and that recrystallisation of this layer occurred during annealing at 800°C. Nano-hardness testing of the P+ implanted 6H-SiC indicated that the hardness of the implanted SiC was initially much lower than unimplanted SiC due to the formation of an amorphous layer during ion implantation. After annealing the implanted SiC at 800°C and 1200°C, the hardness increased due to re-crystallisation and point defect hardening. Neutron Irradiated 3C-SiC TEM investigations of neutron irradiated 3C-SiC revealed the presence dark spot defects for SiC samples irradiated to a dose of 5.9×1021 n/cm2 and 9.6×1021 n/cm2. Neutron Irradiated GaAs TEM investigation revealed a high density of dislocation loops in the unannealed neutron irradiated GaAs. The loop diameters increased after post-irradiation annealing in the range 600 to 800 °C. The dislocation loops were found to be of interstitial type lying on the {110} cleavage planes of GaAs. This finding is in agreement with earlier studies on 300 keV proton bombarded and 1 MeV electron irradiated GaAs where interstitial loops on {110} planes became visible after annealing at temperatures exceeding 500 °C. The small dislocation loops on the {110} planes of the neutron irradiated GaAs transformed to large loops and dislocations after annealing at 1000 °C.

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