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MBE growth and charaterization of GaN film /Zhu, Wenkai. January 1999 (has links)
Thesis (M. Phil.)--University of Hong Kong, 1999. / Includes bibliographical references (leaves 65-66).
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Growing of GaN on vicinal SiC surface by molecular beam epitaxy /Cheung, Sau-ha. January 2002 (has links)
Thesis (Ph. D.)--University of Hong Kong, 2002. / Includes bibliographical references (leaves 68-71).
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Growth kinetics of GaN during molecular beam epitaxyZheng, Lianxi. January 2001 (has links)
Thesis (Ph. D.)--University of Hong Kong, 2001. / Includes bibliographical references (leaves 95-100).
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Contact characterization and persistent photoconductivity effects in MBE grown n-type GaNFrazier, Stuart Thomas. January 1900 (has links)
Thesis (M.S.)--West Virginia University, 1998. / Title from document title page. "December 1998." Document formatted into pages; contains viii, 125 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 84-89).
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GaN growth by RF-plasma assisted molecular beam epitaxy determination of surface stoichiometry by RHEED-TRAXS, annealing of GaN:Be and the effects of active nitrogen species, surface polarity, and excess Ga-overpressure on high temperature limits /VanMil, Brenda. January 1900 (has links)
Thesis (Ph. D.)--West Virginia University, 2005. / Title from document title page. Document formatted into pages; contains xi, 99 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 93-99).
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Depozice Ga a GaN nanostruktur na grafenový substrát / Depositon Ga and GaN nanostructures on graphen substrateHammerová, Veronika January 2017 (has links)
This diploma thesis is focused on deposition Ga and GaN structures on graphene fabricated by method of mechanical exfoliation. For mechanical exfoliation was used new method with using DGL Gel-Film with kinetically controlled adhesion. Ga is deposited by Molecular beam epitaxy with using eusion cell in UHV conditions. GaN was obtained by post-nitridation of Ga islands. These structures were investigated with optical microscope, SEM, Raman spectroscopy and photoluminiscence.
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