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The scattering of H2 from Si(100) has been studied using pulsed molecular beam techniques and quantum state-specific detection methods. These studies can be used to test theoretical calculations and give insight into new theories of molecule-surface interactions, a fundamental study in a diverse field of science and technology. In this work, time-of-flight (TOF) spectra of the elastic scattering of H2(v=1. J=1) and H2(v=0, J=1) from clean Si were recorded over a wide range of surface temperatures. Two data processing strategies were developed to extract rich kinematic information from the scattering experiments, e.g., mean translational energy exchange, absolutely survival probability, and angular and speed distribution of the scattered molecules. No such set of quantitative results has been reported before for this system. Compared with close packed metal surfaces, these scattering experiments from a covalently bonded semiconductor surface showed a completely distinct dynamics, e.g. the finding of energy gain instead of loss from the substrate, much broader angular distribution and some counterintuitive surface temperature effects. From the studies of molecules/surface scattering experiments, the thermal excitation on Si(100) surface which depends on surface temperature can substantially alter the adsorption barrier and its distribution, and therefore changes the kinematics of scattered molecules. As a result, even the most basic understanding of the dynamics has to include phonon excitation and deexcitation of the silicon substrate. / text