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The fabrication and characterization of ion-implanted germanium-incorporated silicon-carbide diodes and transistorsLang, Matthias. January 2006 (has links)
Thesis (M.C.E.)--University of Delaware, 2006. / Principal faculty advisor: James Kolodzey, Dept. of Electrical and Computer Engineering. Includes bibliographical references.
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Electronic properties and metastability of hydrogenated amorphous silicon-germanium alloys with low germanium content /Palinginis, Kimon Christoph, January 2000 (has links)
Thesis (Ph. D.)--University of Oregon, 2000. / Typescript. Includes vita and abstract. Includes bibliographical references (leaves 168-174). Also available for download via the World Wide Web; free to University of Oregon users.
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The fabrication and characterization of high temperature Terahertz emitters, and DNA-sensitive transistors based on silicon-germanium and silicon carbide materialsXuan, Guangchi. January 2008 (has links)
Thesis (Ph.D.)--University of Delaware, 2007. / Principal faculty advisor: James Kolodzey, Dept. of Electrical and Computer Engineering. Includes bibliographical references.
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Fabrication and characterization of structures and rectifiers based on silicon carbide alloyed with germaniumKatulka, Gary L. January 2007 (has links)
Thesis (Ph.D.)--University of Delaware, 2007. / Principal faculty advisor: James Kolodzey, Dept. of Electrical and Computer Engineering. Includes bibliographical references.
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Alloying phenomenon of amorphous silicon and germanium double layers on silicon wafer generated by in-situ thermal pulse =: 原位熱脈衝對硅片上非晶硅鍺雙層薄膜所產生的合金現象. / 原位熱脈衝對硅片上非晶硅鍺雙層薄膜所產生的合金現象 / Alloying phenomenon of amorphous silicon and germanium double layers on silicon wafer generated by in-situ thermal pulse =: Yuan wei re mai chong dui gui pian shang fei jing gui zhe shuang ceng bo mo suo chan sheng de he jin xian xiang. / Yuan wei re mai chong dui gui pian shang fei jing gui zhe shuang ceng bo mo suo chan sheng de he jin xian xiangJanuary 1998 (has links)
by Yeung Ching Chung. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1998. / Includes bibliographical references (leaves 69-71). / Text in English; abstract also in Chinese. / by Yeung Ching Chung. / Table of contents --- p.i / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- General overview --- p.1 / Chapter 1.2 --- The present study --- p.3 / Chapter Chapter 2 --- Sample preparation and characterization / Chapter 2.1 --- Sample preparation / Chapter A. --- General description --- p.5 / Chapter B. --- The thermal pulse furnace --- p.7 / Chapter C. --- The substrates --- p.9 / Chapter D. --- Sample preparation --- p.10 / Chapter 2.2 --- Sample characterization / Chapter A. --- Micro Raman system --- p.11 / Chapter B. --- Rutherford backscattering spectrometry (RBS) --- p.12 / Chapter C. --- X-ray powder diffraction --- p.13 / Chapter D. --- AFM. SEM and Surface Profiler --- p.13 / Chapter Chapter 3 --- Results and discussion / Chapter 3.1 --- The surface morphology / Chapter A. --- General description --- p.15 / Chapter B. --- The as-deposited amorphous film --- p.15 / Chapter C. --- The crystalline Ge film --- p.16 / Chapter D. --- The alloy film --- p.17 / Chapter E. --- The role of a-Si layer --- p.22 / Chapter 3.2 --- The depth profile (RBS) / Chapter A. --- General description --- p.24 / Chapter B. --- Peak temperature dependence --- p.27 / Chapter C. --- Heating rate dependence --- p.30 / Chapter 3.3 --- The near surface composition measured by Raman scattering / Chapter A. --- General description --- p.33 / Chapter B. --- Peak temperature dependence --- p.43 / Chapter C. --- Heating rate dependence --- p.45 / Chapter 3.4 --- Preferred growth direction / Chapter A. --- General description --- p.47 / Chapter B. --- Peak temperature dependence --- p.48 / Chapter C. --- Heating rate dependence --- p.51 / Chapter 3.5 --- Discussion / Chapter A. --- The particle size --- p.55 / Chapter B. --- The participation of Si substrate --- p.58 / Chapter C. --- The alloy formation --- p.58 / Chapter D. --- The abnormally fast interdiffusion --- p.63 / Chapter Chapter 4 --- Conclusion --- p.65 / Appendix --- p.67 / References --- p.69
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Low voltage BiCOMS circuit topologies for the design of a 19GHz, 1.2V, 4-Bit accumulator in silicon-germanium /Bethel, Ryan H., January 2007 (has links) (PDF)
Thesis (M.S.) in Electrical Engineering--University of Maine, 2007. / Includes vita. Includes bibliographical references (leaf 44).
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The low temperature oxidation behavior of Si(₁-[subscript x]) Ge[subscript x] thin films in a fluorinated ambient /Kilpatrick, Stephen James, January 1997 (has links)
Thesis (Ph. D.)--Lehigh University, 1997. / Includes vita. Bibliography: leaves 266-279.
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Low Voltage BiCMOS Circuit Topologies for the Design of a 19GHz, 1.2V, 4-Bit Accumulator in Silicon-GermaniumBethel, Ryan H. January 2007 (has links) (PDF)
No description available.
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An investigation of MEVVA implanted germanium by scanning probe microscopy, ion beam analysis and x-ray diffraction.January 1999 (has links)
by Lee, Chun-Sing. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references (leaves 98-105). / Abstracts in English and Chinese. / Acknowledgements --- p.2 / Abstract --- p.3 / Table of Contents --- p.7 / List of Figures --- p.10 / List of Tables --- p.13 / Chapter Chapter 1 --- Introduction --- p.14 / Chapter 1.1. --- Ion implantation --- p.14 / Chapter 1.2. --- Scope of the thesis --- p.15 / Chapter Chapter 2 --- Background Theory --- p.17 / Chapter 2.1. --- Ion stopping --- p.17 / Chapter 2.2. --- The energy-loss process --- p.17 / Chapter 2.3. --- Kinematics of binary elastic collision --- p.20 / Chapter 2.4. --- Nuclear and electronic stopping --- p.21 / Chapter 2.5. --- Radiation Damage --- p.22 / Chapter 2.6. --- Spikes --- p.24 / Chapter 2.7. --- Topography of ion bombarded surface --- p.26 / Chapter Chapter 3 --- Equipment Reviews --- p.31 / Chapter 3.1. --- Metal Vapour Vacuum Arc Ion Source Implanter --- p.31 / Chapter 3.2. --- Atomic Force Microscopy --- p.34 / Chapter 3.3. --- Rutherford Backscattering Spectrometry --- p.37 / Chapter 3.4. --- X-ray Diffraction --- p.40 / Chapter Chapter 4 --- Study of Ion Beam Implanted Germanium by Atomic Force Microscopy and Rutherford Backscattering Spectrometry --- p.43 / Chapter 4.1. --- Introduction --- p.43 / Chapter 4.2. --- Experiments --- p.45 / Chapter 4.3. --- Results and discussion --- p.47 / Chapter 4.3.1. --- AFM --- p.47 / Chapter 4.3.2. --- RBS and ion channeling --- p.64 / Chapter 4.4. --- Conclusions --- p.71 / Chapter Chapter 5 --- Ion Beam Synthesised Cobalt Germanide Alloy by Metal Vapour Vacuum Arc Implantation --- p.73 / Chapter 5.1. --- Introduction --- p.73 / Chapter 5.2. --- Experiments --- p.74 / Chapter 5.3. --- Results and discussion --- p.74 / Chapter 5.3.1. --- XRD --- p.74 / Chapter 5.3.2. --- AFM --- p.78 / Chapter 5.3.3. --- RBS and ion channeling --- p.82 / Chapter 5.4. --- Conclusions --- p.87 / Chapter Chapter 6 --- Tip Artifacts in Atomic Force Microscope Imaging of Ion Bombarded Nanostructures on Germanium Surfaces --- p.89 / Chapter 6.1. --- Introduction --- p.89 / Chapter 6.2. --- Experiments --- p.90 / Chapter 6.3. --- Results and discussion --- p.90 / Chapter 6.4. --- Conclusions --- p.95 / Chapter Chapter 7 --- Conclusions --- p.96 / Bibliography --- p.98 / Publications --- p.105
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Design and simulation of strained-Si/strained SiGe dual channel hetero-structure MOSFETs /Goyal, Puneet. January 2007 (has links)
Thesis (M.S.)--Rochester Institute of Technology, 2007. / Typescript. Includes bibliographical references.
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