The theme of this thesis is MBE growth of high resistivity semiconductor epi-layers and MBD growth of silicon oxide anti-reflection films. For MBE growth of high resistivity semiconductor epi-layers, In0.523Al0.477As and In0.527Al0.228Ga0.245As lattice matched to InP and grown by MBE at 400¢J has been investigated. We construct n-i-n and p-i-n structure diode models to evidence that the nonlinear I-V characteristics are an intrinsic property of 400¢J In0.523Al0.477As and In0.527Al0.228Ga0.245As, and not due to barriers to current injection at the n+ InGaAs/ high resistivity epi-layer and high resistivity epi-layer/n+ InP heterojunctions. We obtained the effective resistivities of 400¢J In0.523Al0.477As and In0.527Al0.228Ga0.245As at 7V are still more than 109 £[ cm and 107 £[ cm, respectively, in n-i-n structure. They are more than sufficient for most practical applications. For MBD growth of silicon oxide anti-reflection films, we have set up the SiO MBD system in our lab. Then we measured the index of the SiO film that we deposited in the wavelength of 1550nm is about 1.85. Finally, we coated SiO anti-reflection film on one cleaved facet of a Fabry-Perot laser. The reflectance R of the coated facet is reduced to about 1.7¡Ñ10-4 in the vicinity of £f¡×1580 nm.