This thesis aims to bring an understanding to the silicon carbide (SiC) bipolar junction transistor (BJT). SiC power devices are superior to the silicon IGBT in several ways. They are for instance, able to operate with higher efficiency, at higher frequencies, and at higher junction temperatures. From a system point of view the SiC power device could decrease the cost and complexity of cooling, reduce the size and weight of the system, and enable the system to endure harsher environments. The three main SiC power device designs are discussed with a focus on the BJT. The SiC BJT is compared to the SiC junction field-effect transistor (JFET) and the metal-oxide semiconductor field-effect transistor (MOSFET). The potential of employing SiC power devices in applications, ranging from induction heating to high-voltage direct current (HVDC), is presented. The theory behind the state-of-the-art dual-source (2SRC) base driver that was presented by Rabkowski et al. a few years ago is described. This concept of proportional base drivers is introduced with a focus on the discretized proportional base drivers (DPBD). By implementing the DPBD concept and building a prototype it is shown that the steady-state consumption of the base driver can be reduced considerably.  The aspects of the reverse conduction of the SiC BJT are presented. It is shown to be of importance to consider the reduced voltage drop over the base-emitter junction. Last the impact of SiC unipolar and bipolar devices in series-resonant (SLR) converters is presented. Two full-bridges are designed and constructed, one with SiC MOSFETs utilizing the body diode for reverse conduction during the dead-time, and the second with SiC BJTs with anti-parallel SiC Schottky diodes. It is found that the SiC power devices, with their absence of tail current, are ideal devices to fully utilize the soft-switching properties that the SLR converters offer. The SiC MOSFET benefits from its possibility to utilize reverse conduction with a low voltage drop. It is also found that the size of capacitance of the snubbers can be reduced compare to state-of-the-art silicon technology. High switching frequencies of 200 kHz are possible while still keeping the losses low. A dead-time control strategy for each device is presented. The dual control (DuC) algorithm is tested with the SiC devices and compared to frequency modulation (FM). The analytical investigations presented in this thesis are confirmed by experimental results on several laboratory prototype converters. / <p>QC 20150529</p>

The most essential unit required for all the electronic devices is the Power Supply Unit (PSU). The main objective of power supply designers is to reduce the size, cost and weight, and to increase the power density of the converter. There is also a requirement to have a lower loss in the circuit and hence in the improvement of energy efficiency of the converter circuit. Operating the converter circuits at higher switching frequencies reduces the size of the passive components such as transformers, inductors, and capacitors, which results in a compact size, weight, and increased power density of the converter. At present the switching frequency of the converter circuit is limited due to the increased switching losses in the existing semiconductor devices and in the magnetic area, because of increased hysteresis and eddy current loss in the core based transformer. Based on continuous efforts to improve the new semi conductor materials such as GaN/SiC and with recently developed high frequency multi-layered coreless PCB step down power transformers, it is now feasible to design ultra-low profile, high power density isolated DC/DC and AC/DC power converters. This thesis is focussed on the design, analysis and evaluation of the converters operating in the MHz frequency region with the latest semi conductor devices and multi-layered coreless PCB step-down power and signal transformers. An isolated flyback DC-DC converter operated in the MHz frequency with multi-layered coreless PCB step down 2:1 power transformer has been designed and evaluated. Soft switching techniques have been incorporated in order to reduce the switching loss of the circuit. The flyback converter has been successfully tested up to a power level of 10W, in the switching frequency range of 2.7-4 MHz. The energy efficiency of the quasi resonant flyback converter was found to be in the range of 72-84% under zero voltage switching conditions (ZVS). The output voltage of the converter was regulated by implementing the constant off-time frequency modulation technique. Because of the theoretical limitations of the Si material MOSFETs, new materials such as GaN and SiC are being introduced into the market and these are showing promising results in the converter circuits as described in this thesis. Comparative parameters of the semi conductor materials such as the vi energy band gap, field strengths and figure of merit have been discussed. In this case, the comparison of an existing Si MOSFET with that of a GaN MOSFET has been evaluated using a multi-layered coreless PCB step-down power transformer for the given input/output specifications of the flyback converter circuit. It has been determined that the energy efficiency of the 45 to 15V regulated converter using GaN was improved by 8-10% compared to the converter using the Si MOSFET due to the gate drive power consumption, lower conduction losses and improved rise/fall times of the switch. For some of the AC/DC and DC/DC applications such as laptop adapters, set-top-box, and telecom applications, high voltage power MOSFETs used in converter circuits possess higher gate charges as compared to that of the low voltage rating MOSFETs. In addition, by operating them at higher switching frequencies, the gate drive power consumption, which is a function of frequency, increases. The switching speeds are also reduced due to the increased capacitance. In order to minimize this gate drive power consumption and to increase the frequency of the converter, a cascode flyback converter was built up using a multi-layered coreless PCB transformer and this was then evaluated. Both simulation and experimental results have shown that with the assistance of the cascode flyback converter the switching speeds of the converter were increased including the significant improvement in the energy efficiency compared to that of the single switch flyback converter. In order to further maximize the utilization of the transformer, to reduce the voltage stress on MOSFETs and to obtain the maximum power density from the power converter, double ended topologies were chosen. For this purpose, a gate drive circuitry utilising the multi-layered coreless PCB gate drive transformer was designed and evaluated in both a Half-bridge and a Series resonant converter. It was found that the gate drive power consumption using this transformer was less than 0.8W for the frequency range of 1.5-3.5MHz. In addition, by using this gate drive circuitry, the maximum energy efficiency of the series resonant converter was found to be 86.5% with an output power of 36.5W.

The Power Supply Unit (PSU) plays a vital role in almost all electronic equipment. The continuous efforts applied to the improvement of semiconductor devices such as MOSFETS, diodes, controllers and MOSFET drivers have led to the increased switching speeds of power supplies. By increasing the switching frequency of the converter, the size of passive elements such as inductors, transformers and capacitors can be reduced. Hence, the high frequency transformer has become the backbone in isolated AC/DC and DC/DC converters. The main features of transformers are to provide isolation for safety purpose, multiple outputs such as in telecom applications, to build step down/step up converters and so on. The core based transformers, when operated at higher frequencies, do have limitations such as core losses which are proportional to the operating frequency. Even though the core materials are available in a few MHz frequency regions, because of the copper losses in the windings of the transformers those which are commercially available were limited from a few hundred kHz to 1MHz. The skin and proximity effects because of induced eddy currents act as major drawbacks while operating these transformers at higher frequencies. Therefore, it is necessary to mitigate these core losses, skin and proximity effects while operating the transformers at very high frequencies. This can be achieved by eliminating the magnetic cores of transformers and by introducing a proper winding structure. A new multi-layered coreless printed circuit board (PCB) step down transformer for power transfer applications has been designed and this maintains the advantages offered by existing core based transformers such as, high voltage gain, high coupling coefficient, sufficient input impedance and high energy efficiency with the assistance of a resonant technique. In addition, different winding structures have been studied and analysed for higher step down ratios in order to reduce copper losses in the windings and to achieve a higher coupling coefficient. The advantage of increasing the layer for the given power transfer application in terms of the coupling coefficient, resistance and energy efficiency has been reported. The maximum energy efficiency of the designed three layered transformers was found to be within the range of 90%-97% for power transfer applications operated in a few MHz frequency regions. The designed multi-layered coreless PCB transformers for given power applications of 8, 15 and 30W show that the volume reduction of approximately 40-90% is possible when compared to its existing core based counterparts. The estimation of EMI emissions from the designed transformers proves that the amount of radiated EMI from a three layered transformer is less than that of the two layered transformer because of the decreased radius for the same amount of inductance. Multi-layered coreless PCB gate drive transformers were designed for signal transfer applications and have successfully driven the double ended topologies such as the half bridge, the two switch flyback converter and resonant converters with low gate drive power consumption of about half a watt. The performance characteristics of these transformers have also been evaluated using the high frequency magnetic material made up of NiZn and operated in the 2-4MHz frequency region. These multi-layered coreless PCB power and signal transformers together with the latest semiconductor switching devices such as SiC and GaN MOSFETs and the SiC schottky diode are an excellent choice for the next generation compact SMPS.