In this thesis we study GaAs one dimensional hole systems with strong spin-orbit interaction effects. The primary focus is the Zeeman splitting of 1D subbands in the two orthogonal in-plane magnetic field directions. We study two types of 1D hole systems based on different (311)A grown heterostructures: a modulation doped GaAs/AlGaAs square quantum well and an undoped induced GaAs/AlGaAs triangular quantum well. The results from the modulation doped 1D wire show enhanced anisotropy of the effective Lande g-factor for the two in-plane field directions (parallel and perpendicular to the wire), compared to that in 2D hole systems. This enhancement is explained by the confinement induced reorientation of the total angular momentum ^ J from perpendicular to the 2D plane to in-plane and parallel to the wire. We use the intrinsic anisotropy of the in-plane g-factors to probe the 0:7 structure and the zero bias anomaly in 1D hole wires. We find that the behaviour of the 0:7 structure and the ZBA are correlated and depend strongly on the orientation of the in-plane field. This result proves the connection between the 0:7 and the ZBA and their relation to spin. We fabricate the first induced hole 1D wire with extremely stable gate characteristics and characterize this device. We also fabricate devices with two orthogonal induced hole wires on one chip, to study the interplay between the confinement, crystallographic anisotropy and spin-orbit coupling and their effect on the Zeeman splitting. We find that the ratios of the g-factors in the two orthogonal field directions for the two wires show opposite behaviour. We compare absolute values of the g-factors relative to the magnetic field direction. For B || [011] the g-factor is large for the wire along [011] and small for the wire along [233]. Whereas for B || [233], the g-factors are large irrespective of the wire direction. The former result can be explained by reorientation of ^ J along the wire, and the latter by an additional off-diagonal Zeeman term, which leads to the out-of-plane component of ^ J when B || [233], and as a result, to enhanced g-factors via increased exchange interactions.