• Refine Query
  • Source
  • Publication year
  • to
  • Language
  • 2
  • 1
  • Tagged with
  • 3
  • 3
  • 2
  • 2
  • 2
  • 2
  • 2
  • 2
  • 2
  • 2
  • 2
  • 2
  • 2
  • 2
  • 2
  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Amplificador óptico híbrido Raman/EDFA com controle automático de ganho para redes DWDM reconfiguráveis / Raman/EDFA hybrid optical amplifier with automatic gain control for reconfigurable DWDM networks

Oliveira, Juliano Rodrigues Fernandes de 27 May 2014 (has links)
Visando atender a massificação das tecnologias da informação e comunicação (TIC) por meio de um aproveitamento mais eficiente da infra-estrutura de fibras ópticas, as redes ópticas DWDM vem passando por significativa evolução de capacidade, com base no uso de formatos de modulação avançados, para canais operando em taxas de 100 Gb/s e superiores, bem como no emprego de topologias dinâmicas e reconfiguráveis. Estas redes ópticas de nova geração impõe novos requisitos de desempenho aos amplificadores ópticos. Especificamente, as características dinâmicas da rede tornam obrigatório o uso de esquemas de controle que assegurem estrita planicidade espectral de ganho enquanto o emprego de formatos de modulação avançados e de alta ordem requer margens mais estreitas em termos da relação sinal-ruído aceitável para detecção dos sinais recebidos. Neste contexto, esta tese propõe e avalia experimentalmente uma topologia de amplificação óptica híbrida Raman/EDFA, introduzindo um novo esquema de controle automático de ganho e apresentando desempenho superior aos amplificadores atualmente usados em redes DWDM reconfiguráveis. O amplificador óptico híbrido desenvolvido baseia-se em um estágio Raman distribuído contra-propagante, com excelente desempenho de figura de ruído (porém com baixa eficiência de conversão de bombeio em amplificação - PCE) seguido de um estágio EDFA, que assegura alta potência de saída, devido a sua elevada PCE. Ganho espectral plano foi obtido por meio de uma técnica de controle automático de ganho inovadora, baseada na atuação paralela e independente de duas malhas de controle automático de ganho, uma primeira aplicada ao estágio de amplificação Raman visando ganho-alvo variável com baixa variação espectral, enquanto outra malha de controle de ganho visa fornecer ganho alvo fixo ao estágio EDFA, com alta potência de saída. / Seeking to support the massive deployment of information and communication technologies (ICTs) by means of a more efficient usage of the optical fiber infrastructure, DWDM optical networks have been undergoing a significant capacity evolution, by using advanced modulation formats for optical channels operating at data rates of 100 Gb/s and beyond, as well as by employing dynamic and reconfigurable network topologies. These new generation optical networks impose new performance benchmarks on the optical amplifiers. Specifically, the dynamic characteristics of the network make mandatory the deployment of control schemes which assure stringent optical gain spectral flatness while the usage of high-order advanced modulation formats translate into more strict margins of signal-to-noise ratios for the detected signals. In this context, this thesis proposes and experimentally evaluates an hybrid Raman/ EDFA optical amplifier topology, introducing a novel automatic gain control scheme and demonstrating improved performance over the optical amplifiers already in use in DWDM reconfigurable networks. The developed hybrid optical amplifier is based on a distributed counter-propagating Raman stage, displaying excellent noise figure performance (albeit presenting low conversion efficiency - PCE) followed by an EDFA stage, which assures high output power, due to its high PCE. Flat spectral gain was achieved by means of a novel gain control technique, based on the parallel and independently acting of two control schemes, the first applied over the Raman amplifying stage, aiming at a variable target gain and low spectral gain ripple, while the other seeks to attain a fixed target gain at the EDFA, assuring a high output power.
2

Amplificador óptico híbrido Raman/EDFA com controle automático de ganho para redes DWDM reconfiguráveis / Raman/EDFA hybrid optical amplifier with automatic gain control for reconfigurable DWDM networks

Juliano Rodrigues Fernandes de Oliveira 27 May 2014 (has links)
Visando atender a massificação das tecnologias da informação e comunicação (TIC) por meio de um aproveitamento mais eficiente da infra-estrutura de fibras ópticas, as redes ópticas DWDM vem passando por significativa evolução de capacidade, com base no uso de formatos de modulação avançados, para canais operando em taxas de 100 Gb/s e superiores, bem como no emprego de topologias dinâmicas e reconfiguráveis. Estas redes ópticas de nova geração impõe novos requisitos de desempenho aos amplificadores ópticos. Especificamente, as características dinâmicas da rede tornam obrigatório o uso de esquemas de controle que assegurem estrita planicidade espectral de ganho enquanto o emprego de formatos de modulação avançados e de alta ordem requer margens mais estreitas em termos da relação sinal-ruído aceitável para detecção dos sinais recebidos. Neste contexto, esta tese propõe e avalia experimentalmente uma topologia de amplificação óptica híbrida Raman/EDFA, introduzindo um novo esquema de controle automático de ganho e apresentando desempenho superior aos amplificadores atualmente usados em redes DWDM reconfiguráveis. O amplificador óptico híbrido desenvolvido baseia-se em um estágio Raman distribuído contra-propagante, com excelente desempenho de figura de ruído (porém com baixa eficiência de conversão de bombeio em amplificação - PCE) seguido de um estágio EDFA, que assegura alta potência de saída, devido a sua elevada PCE. Ganho espectral plano foi obtido por meio de uma técnica de controle automático de ganho inovadora, baseada na atuação paralela e independente de duas malhas de controle automático de ganho, uma primeira aplicada ao estágio de amplificação Raman visando ganho-alvo variável com baixa variação espectral, enquanto outra malha de controle de ganho visa fornecer ganho alvo fixo ao estágio EDFA, com alta potência de saída. / Seeking to support the massive deployment of information and communication technologies (ICTs) by means of a more efficient usage of the optical fiber infrastructure, DWDM optical networks have been undergoing a significant capacity evolution, by using advanced modulation formats for optical channels operating at data rates of 100 Gb/s and beyond, as well as by employing dynamic and reconfigurable network topologies. These new generation optical networks impose new performance benchmarks on the optical amplifiers. Specifically, the dynamic characteristics of the network make mandatory the deployment of control schemes which assure stringent optical gain spectral flatness while the usage of high-order advanced modulation formats translate into more strict margins of signal-to-noise ratios for the detected signals. In this context, this thesis proposes and experimentally evaluates an hybrid Raman/ EDFA optical amplifier topology, introducing a novel automatic gain control scheme and demonstrating improved performance over the optical amplifiers already in use in DWDM reconfigurable networks. The developed hybrid optical amplifier is based on a distributed counter-propagating Raman stage, displaying excellent noise figure performance (albeit presenting low conversion efficiency - PCE) followed by an EDFA stage, which assures high output power, due to its high PCE. Flat spectral gain was achieved by means of a novel gain control technique, based on the parallel and independently acting of two control schemes, the first applied over the Raman amplifying stage, aiming at a variable target gain and low spectral gain ripple, while the other seeks to attain a fixed target gain at the EDFA, assuring a high output power.
3

Contribution aux analyses de fiabilité des transistors HEMTs GaN : exploitation conjointe du modèle physique TCAD et des stress dynamiques HF pour l'analyse des mécanismes de dégradation / Contribution to GaN HEMTs transistors reliability analyses by use of TCAD physical modeling and HF dynamic stresses

Saugnon, Damien 18 October 2018 (has links)
Dans la course aux développements des technologies, une révolution a été induite par l'apparition des technologies Nitrures depuis deux décennies. Ces technologies à grande bande interdite proposent en effet une combinaison unique tendant à améliorer les performances en puissance, en intégration et en bilan énergétique pour des applications hautes fréquences (bande L à bande Ka en production industrielle). Ces technologies mobilisent fortement les milieux académiques et industriels afin de proposer des améliorations notamment sur les aspects de fiabilité. Les larges efforts consentis par des consortiums industriels et académiques ont permis de mieux identifier, comprendre et maîtriser certains aspects majeurs limitant la fiabilité des composants, et ainsi favoriser la qualification de certaines filières. Cependant, la corrélation et l'analyse physique fine des mécanismes de dégradation suscite encore de nombreux questionnements, et il est indispensable de renforcer ces études par une approche d'analyse multi-outils. Nous proposons dans ce travail de thèse une stratégie d'analyse selon deux aspects majeurs. Le premier concerne la mise en œuvre d'un banc de stress qui autorise le suivi de nombreux marqueurs électriques statiques et dynamiques, sans modifier les conditions de connectiques des dispositifs sous test. Le second consiste à mettre en œuvre un modèle physique TCAD le plus représentatif de la technologie étudiée afin de calibrer le composant à différentes périodes du stress.Le premier chapitre est consacré à la présentation des principaux tests de fiabilité des HEMTs GaN, et des défauts électriques et/ou structuraux recensés dans la littérature ; il y est ainsi fait état de techniques dites non-invasives (c.-à-d. respectant l'intégrité fonctionnelle du composant sous test), et de techniques destructives (c.-à-d. n'autorisant pas de reprise de mesure). Le second chapitre présente le banc de stress à haute fréquence et thermique développé pour les besoins de cette étude ; l'adjonction d'un analyseur de réseau vectoriel commutant sur les quatre voies de tests permet de disposer de données dynamiques fréquentielles, afin d'interpréter les variations du modèle électrique petit-signal des modules sous test à différentes périodes du stress. [...] / In the race to technologies development, disruptive wide bandgap GaN devices propose challenging performances for high power and high frequency applications. These technologies strongly mobilize academic and industrial partners in order to improve both the performances and the reliability aspects. Extensive efforts have made it possible to better identify, understand and control first order degradation mechanisms limiting the lifetime of the devices; however, the correlation (and fine physical analysis) of different degradation mechanisms still raises many questions, and it is essential to strengthen these studies by mean of multi-tool analysis approach. In this thesis, we propose a twofold analysis strategy. The first aspect concerns the implementation of a stress bench that allows the monitoring of numerous static and dynamic electrical markers, without removing the devices under test from their environment (in order to have a consistent data set during the period of the strain application). The second aspect consists in implementing a physical TCAD model of the technology under study, in order to calibrate the component before stress, and to tune the model at different periods of stress (still considering stress-dependent parameters potentially affecting the device). The first chapter is devoted to the presentation of the main reliability tests of GaN HEMTs, and of the electrical and/or structural defects identified in the literature; it thus refers to so-called non-invasive techniques (i.e. respecting the functional integrity of the component under test), and destructive techniques (i.e. not allowing additive electrical measurement). The second chapter presents the high frequency and thermal stress bench dedicated to this study; the addition of a vector network analyzer switching between the four test channels provides dynamic frequency data, in order to interpret the variations of the small signal electrical model of the devices under test at different stress periods.[...]

Page generated in 0.0567 seconds