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A Study Of Technology Transfer Mechanism For IC Packing ProcessLin, Cheng-Nan 19 August 2004 (has links)
The current packaging trend toward smaller and thinner package has pushed the manufacturing technology to the limit. Due to fast development of encapsulation technology, the need for shortening factory time and upgrading technological ability are vital to promote companys¡¦ competitiveness. Most of IC packing factory are expanding resources to adapt on the technology development needs. Technology transfer methods are utilized to effectively cope with the technology trend.
This research takes technology suppliers, characters of the technology and receivers of technology as three major independent variables. In other words, the negative effect of the absorptive capacity can be reduced effectively by using proper technology transfer mechanism and thus achieving satisfactory performance. In the technology transfer process , in-depth factors other than existing procedures and rules are considered. This will affect the effectiveness and goals of the transfer. Besides, the technology characteristics and technology transfer performance are related to each other. The knowledge and ability to technology transfer with shorter gap between technology provider and accepter, help developing new products and improving management process with consolidated firm competitiveness and has become the significant theme of the 21st century.
Keyword: Technology transfer¡BIC Package
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The Study of the Moisture Effect on the Interfacial adhesion of IC Packages in the IR-Reflow ProcessWeng, Da-Jiun 16 July 2002 (has links)
Abstract¡G
This study imitated the IC package with different solder mask thickness in different environment of the temperature and moisture to see if the adhesion strength changed after IR-Reflow process. The temperature and moisture of the environment were decided base on the possible conditions that the IC package might encounter in the real situation. After the temperature and moisture in the environment worked interactively and reciprocally, we found that the thickness of solder mask indeed cause the change of adhesion strength.
The thickness of solder mask affected by the raising of the temperature and moisture caused the apparent reduction of the interface adhesion strength due to the softening of the material and the penetrating of the moisture. Besides, the specimen fracture surface occurred between solder mask and FR-4 substrate under any experimental conditions and progress confirmed that the measured strength is the adhesion strength between solder mask and FR-4.
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The Study of Precondition Variations on the Warpage of PBGA packagesChen, Wei-Chih 29 August 2001 (has links)
The main objective of this research is to studying the moisture effect on warpage of PBGA via IR-reflow process by utilizing Shadow Moirè method. The relationship between precondition variations and moisture content of PBGA is also studied.
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The Effects of Flame Retardant and Electrical Current on the Reliability of IC PackageHuang, Chen-Town 02 July 2002 (has links)
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Temperature and bias ffect on wire-bond reliability for F1 & S2 type new wire evaluationeHuang, Chen-may 24 June 2003 (has links)
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The Study of the Moisture Effect on the Warpage of IC Packages in the IR-Reflow ProcessHung, Chien-Hsiung 28 August 2000 (has links)
Abstract¡G
The main aim of this paper is to utilizing the Shadow Moirè method to study the moisture effect on the warpage of PBGA IC package under the IR-reflow process.
An environmental controlled box is designed and built. Three combinations of different moisture and temperature status are chosen for the purpose of study. The result shows that the moisture and temperature change do yielding the change of the warpage of the IC package.
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The Study of the Temperature Ramp-up Rate on the Warpage of IC Packages in the IR-reflow ProcessChang, Chih-Fang 06 September 2000 (has links)
The main aim of this study is to extending the holographic interferometry technique to measure the effect of the temperature ramp-up rate on the warpage of IC packages in the IR-reflow process . It is noted that both the warpage and the ambient temperature change can cause image fringes. Therefore, an auxiliary sphere is used to identify the fringe numbers caused by the ambient temperature change during the experiment. Then, the Taguchi method will be deduced to study the effect of the temperature ramp-up rate and peak waiting temperature on the warpage of PBGA package in the IR-reflow process.
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The experimental investigation of structure on interfacial-adhesive effectivenessLin, Wen-Yu 12 July 2002 (has links)
The main aim of this paper is using the moiré interferometry to measure interface of the IC package structure materials. The moiré interferometry with high sensitivity can use the fringes to measure displacement field in small structure materials.
The objective of this study is to obtain displacement fields the interfacial adhesion of the substrate and epoxy by using the moiré interferometry. The peeling strain, shearing strain and tensile strain at the interface adhesion are distinguished by utilizing the experiment of data of u-displacement fields and v-displacement field. Finally, a turning point of failure, in found.
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Board Level Reliability of IC Package Under Cyclic Thermomechanical LoadingChen, Sheng-Wei 16 August 2002 (has links)
Abstract
The study on SOC of article is one of package way for CSP. The SOC transmits messages by Solder Ball joining the board.
It can make the volume of product decrease, but the reliability reduces on using. So the reliability of Solder Ball is a very important topic for study.
The article for Solder Ball uses the Mixed-Viscoplastic way to simulate the warpage state of SOC when the temperature of Solder Ball rises by ANSYS. Then using the Viscoplastic material parameter simulates the acts by TCT experiment and checks the suitable Fatigue Model to get the analysis results turn into the reliability data. The reliability data puts to the proof with the experimental reliability data and compares differences to other documents.
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A Study on The Effect of The Warpage And Stress of PBGA Caused by The Variations of Mechanical Properties of Materials in IR-reflow ProcessWANG, CHING-CHUN 20 July 2003 (has links)
The main aim of this paper is to study for the warpage and von Mises stress of PBGA package caused by the variations of mechanical properties of materials in IR-reflow process.
At first, taking advantage of the package symmetry only one quarter of the package was modeled by MSC. Marc. The influence of heat transfer was considered by comparing the results of Coupled mechanical-heat transfer analysis and Mechanical analysis. In the second part, the coefficient of thermal expansions and elastic modulus of molding compound and substrate are selected as the four control factors, and the influence of the four control factors to the warpage and von Mises stress were observed. At last, emperical formulas to predicted warpage and von Mises stress values were obtained.
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