The etching of indium phosphide and indium by H atoms and methyl radicals has been studied in a discharge flow system at temperatures between 25 and 300°C. The results indicate that the hydrogen atoms react with InP to produce In metal globules and PH₃(g) at temperatures greater than 160°C. Methyl radicals were not found to react with InP. However these radicals were found to react with indium metal and the globules that are produced in the reaction of hydrogen atoms with InP. Reactions were conducted by alternately etching with H atoms and then with CH₃ radicals. Rate constants for these reactions were determined at 300°C and these values were found to be consistent with the continuous etch rates observed for a mixture of H atoms and CH₃ radicals. The etched surfaces were studied by SEM, XPS and surface profilometry and their properties found to be consistent with the proposed mechanism for the reaction. / Science, Faculty of / Chemistry, Department of / Graduate

Thesis (Ph. D.)--University of Wisconsin--Madison, 1947. / Typescript. Vita. eContent provider-neutral record in process. Description based on print version record. Includes bibliographical references.

Thesis (Ph. D.)--Georgia State University, 2006. / Title from title screen. Nikolaus Dietz, committee chair; Brian Thoms, Mark Stockman, Vadym Apalkov, Douglas Gies, committee members. Electronic text (167 p. : ill. (some col.)). Description based on contents viewed Apr. 24, 2007. Includes bibliographical references (p. 162-167).

by Candy Man-Yee Chan. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1995. / Includes bibliographical references. / Acknowledgements --- p.i / Abstract --- p.ii / Contents --- p.iii / Abbreviations --- p.v / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- General aspects of group 13 organometallic chemistry --- p.1 / Chapter 1.2 --- Stability of group 13 organometallic compounds --- p.3 / Chapter 1.3 --- Group 13-15 organometallic compounds -- potential single- source precursors for semiconductors --- p.5 / Chapter 1.4 --- Objective of this work --- p.7 / Chapter 1.5 --- References --- p.9 / Chapter Chapter 2 --- Synthesis and Characterization of Group 13Metal Alkyl Halide Complexes / Chapter 2.1 --- Introduction / Chapter 2.1.1 --- General synthetic methods of organogallium and indium halide complexes --- p.10 / Chapter 2.1.2 --- Structural properties of gallium and indium organometallic halides --- p.12 / Chapter 2.1.3 --- Utilization of N-functionalized sterically hindered groups as ligands --- p.14 / Chapter 2.2 --- Results and Discussions / Chapter 2.2.1 --- Synthesis of group 13 metal alkyl complexes --- p.17 / Chapter 2.2.2 --- Characterization of group 13 metal alkyl complexes --- p.23 / Chapter 2.3 --- Experimental --- p.37 / Chapter 2.4 --- References --- p.44 / Chapter Chapter 3 --- Synthesis and Characterization of Group13- 15 Organometallic Compounds / Chapter 3.1 --- Introduction / Chapter 3.1.1 --- General routes to the formation of group 13-15 covalent bond --- p.46 / Chapter 3.1.2 --- Multiple bonding between group 13 and group 15 element --- p.48 / Chapter 3.2 --- Results and Discussions / Chapter 3.2.1 --- Synthesis of group 13-15 organometallic compounds --- p.54 / Chapter 3.2.2 --- Characterization of group 13-15 organometallic compounds --- p.57 / Chapter 3.2.3 --- Discussion on multiple bond character of group13-15 organometallic compounds --- p.72 / Chapter 3.3 --- Experimental --- p.77 / Chapter 3.4 --- References --- p.81 / Appendix I --- p.83 / Appendix II --- p.88

No description available.

Thesis (Ph.D.)--Ohio University, June, 2006. / Title from PDF t.p. Includes bibliographical references (p. 119-128)

Thesis (M.M.S.E.)--University of Delaware, 2006. / Principal faculty advisor: Valeria Stoleru, Dept. of Materials Science & Engineering. Includes bibliographical references.

Thesis (M. S.)--Mechanical Engineering, Georgia Institute of Technology, 2009. / Committee Chair: Melkote, Shreyes; Committee Co-Chair: Danyluk, Steven; Committee Member: Graham, Samuel. Part of the SMARTech Electronic Thesis and Dissertation Collection.

We have observed the electronic transitions within the ('4)T(,1g) ground state of Co('2+) in MgO by Raman spectroscopy. We identified the (GAMMA)(,6g) (--->) (GAMMA)(,8g)('1) transition at 305 cm('-1) and the (GAMMA)(,6g )(--->)(, )(GAMMA)(,8g)('2) transition at 930 cm('-1); the (GAMMA)(,6g )(--->)(, )(GAMMA)(,7g) transition is not seen and is lost in the two-phonon band. We also observed an impurity induced vibration mode at 280 cm('-1), in resonance with the acoustic phonon branches at the surface of the Brillouin zone. The position of the electronic levels cannot be explained by crystal field theory, with the spin-orbit interaction to second-order included. We have calculated the effect of a dynamical Jahn-Teller interaction and have shown, for the first time, the necessity to include the coupling to the T(,2g) mode, in addition to the coupling to the E(,g) mode, although Co('2+) in MgO is a weak Jahn-Teller system. / We also used Raman spectroscopy to observe the vibrational modes of (beta)-In(,2)Se(,2). We observed, for the first time, the layer to layer shear mode(E(,2g)('2)), at 19 cm('-1). The position of this peak and the others, at 42(E(,1g)('1)), 117(A(,1g)('1)), 179(E(,2g)('1)), 181(E(,1g)('2)) and 231 cm('-1)(A(,1g)('2)), follows the trend of the vibrational spectra of (beta)-Ga(,2)S(,2) and of (beta)-Ga(,2)Se(,2) {65}. Using the linear chain model, we calculated the shear force constants and deduced the position of the doublet (E(,2g)('1) and E(,1g)('2)) with very good agreement with the experimental values.

Thesis (M.M.S.E.)--University of Delaware, 2007. / Principal faculty advisor: Valeria Gabriela Stoleru, Dept. of Materials Science & Engineering. Includes bibliographical references.