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The infrared vibrational-rotational spectra of the deuterated triatomic hydrogen molecular ions, H₂D⁺, HD₂⁺, and D₃⁺ have been observed with the Doppler-tuned ion-beam laser spectroscopic method with collision detection. Triatomic hydrogen molecular ions are produced in a coaxial electron-impact ion source. Next, the ions are accelerated and formed into a beam of several keV energy, which is then intercepted at a small angle by a frequency-stabilized CO laser beam. The energy of the ion beam is adjusted to Doppler-shift an ion transition into resonance with a nearby laser line. On resonance, the laser light stimulates the transition to take place. If the resonating states differ in population, the laser-induced transition produces a net population transfer. The occurrence of population transfer is detected by monitoring the transmission of the ion beam through a gas target after laser interaction. The transmission through the target is dependent upon the ion beam population distribution and, therefore, the laser-induced transition can be detected by detecting the change of the transmission of the ion beam. A mass analyzer before the target gas facilitates the mass identification of the observed transitions. We have measured 45 D₃⁺ transition frequencies, 9 H₂D⁺ transition frequencies, and 31 HD₂⁺ transition frequencies, all between 1650 and 2000 cm⁻¹, to better than ±0.0005 cm⁻¹ or ±0.3 ppm. The identifications of the quantum numbers are still in progress. This study should greatly help the search of H₃⁺ and H₂D⁺ ions in interstellar medium.

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This thesis investigates the use of an avalanche Platinum Silicide (PtSi) Schottky Barrier Diode as a detector in fiber optic communication systems for the 1.3 to 1.5 mum spectral region. The avalanche process is used to amplify the signal prior to electrical interfacing in order to enhance the signal-to-noise ratio. The amount of multiplication is predicted by the impact ionization coefficients for electrons and holes, alpha and beta, respectively. By using PtSi Schottky diodes, where alpha > beta, pure electron injection can be accomplished by irradiating with photons of energy psi hnu Eg (where psi is the Schottky Barrier height and Eg is the bandgap of silicon), thus maximizing multiplication and minimizing noise. An alternative means for avalanching involves the quantum effects of impurity-band ionization. By using a heavily doped semiconductor and operating at low temperatures, one can achieve noise-free gain at lower electric field strengths. (Abstract shortened with permission of author.)

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