Polycrystalline Cu(In,Al)Se2 films were deposited by four-source evaporation of Cu, In, Al, and Se using Knudsen type sources in which the elemental fluxes were coincident onto soda lime glass substrates. The single-phase films with composition of Cu:In:Al:Se = 28:15:9:48 which were confirmed by X-ray diffraction and micro-Raman spectroscopy were deposited at substrate temperature of 560¢J. Secondary phases were observed when temperature of substrate is below 560¢J due to incompletely reaction. Under fixed effusion flux, the value of Cu/(In+Al) becomes larger as temperature of substrate increase. However, the value of Al/(In+Al) keeps nearly constant as temperature increase. The band gap is 1.53 eV derived from the result of spectrophotometer. The room temperature resistivity, Hall mobility and carrier concentration of the films are 0.28 £[cm, 24.63 cm2V-1s-1 and 1.27x1019 cm-3 respectively. And the conductive type is p-type. By the way, we try to grow Cu(In,Al)Se2 film in the presence of an Sb beam at substrate temperature of 440¢J. After the addition of an Sb beam, surface morphology become smooth and compact, but there is no significant grain growth. No matter an Sb beam adds or not, secondary phases were observed in both case due to the low temperature of substrate.

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