Recently, the development of nonvolatile memory (NVM) is influence by scaling down. When the device is miniaturized continuously, the tunnel oxide layer of the floating gate will get thinner. In consequence the charges could leak into the substrate and lead to loss all of stored information. In order to enhance the performance of the non-volatility memory, the new generation non-volatile memories have been developed. Advantages of the resistive random access memory (RRAM) are simple structure, lower consumption of energy, higher operating speed and higher endurance. RRAM might be expected to replace the memory of traditional floating gate. However, the mechanisms of RRAM were controversial and more investigations were needed. The aim of this study is to develop new material and theory by using the insulator of GaOx and IGO (InGaOx, IGO). The bottom electrode (TiN) was deposited on the substrate of Si2O3. The GaOx (300Å) and IGO (300Å) thin film were deposited on the bottom electrode of TiN by Multi-Target Sputter. Then, the top electrode (Pt) was deposited on the insulator. The sandwiched structure of Pt/GaOx/TiN and Pt/IGO/TiN device was completed. Based on electrical measuring, the resistance switching feature of Pt/GaOx/TiN is bipolar. The resistance switching features of Pt/IGO/TiN are both bipolar and unipolar. The reliability of the device of Pt/GaOx/TiN and Pt/IGO/TiN were maintained by retention at 85¢XC and 104 cycles endurance. In order to study the device switching mechanisms, we measured the resistance of the Rlow state and Rhigh state and observed the change of the resistance in different temperature. In the similar process, we sputter GaOx and IGO target with Ar gas mixes O2 gas, in order to decrease the defect of thin film. By XPS analyzing, the thin film was stable because the insulator sputter with Ar gas mixed O2 gas has sufficient oxygen. Based on electrical measuring, the resistance switching of Pt/GaOx/TiN and Pt/IGO/TiN which was sputter with Ar gas mixes O2 gas was stable. We succeeded to find new material of RRAM which is GaOx and IGO. They have the characteristics of stable resistance switching. Wide application of In and Ga in modern optoelectronic semiconductor industry. These fabrication techniques can be applied to the manufacture process of semiconductor industry.