Spelling suggestions: "subject:"InP nanowires""
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Emission and Dynamics of Charge Carriers in Uncoated and Organic/Metal Coated Semiconductor NanowiresKaveh Baghbadorani, Masoud 10 October 2016 (has links)
No description available.
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Electrical and Optical Charactristics of InP Nanowire PhotodetectorsMALEKRAH, MEHDI January 2010 (has links)
<p>In this project Fourier Transform Infrared Spectroscopy is used to investigate a new kind of photodiode that is based on nanowires. The photo current and I-V curves for different temperatures, different applied biases, in darkness and illumination condition have been studied. The experiment was conducted in the temperature range from 78 K (-195ºC) to 300 K (27ºC). These photo diodes are designed to work on NIR wavelengths. The results show some excellent properties, such as high break down voltage, and that is an important advantage for photo detectors, low and constant reverse saturation current (Is). The results show some defects, most of them come from fabrication. The design of the sample is also discussed.</p>
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Electrical and Optical Charactristics of InP Nanowire PhotodetectorsMALEKRAH, MEHDI January 2010 (has links)
In this project Fourier Transform Infrared Spectroscopy is used to investigate a new kind of photodiode that is based on nanowires. The photo current and I-V curves for different temperatures, different applied biases, in darkness and illumination condition have been studied. The experiment was conducted in the temperature range from 78 K (-195ºC) to 300 K (27ºC). These photo diodes are designed to work on NIR wavelengths. The results show some excellent properties, such as high break down voltage, and that is an important advantage for photo detectors, low and constant reverse saturation current (Is). The results show some defects, most of them come from fabrication. The design of the sample is also discussed.
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