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Efficient, Stable Infrared Photovoltaics based on Solution-Cast PbSe Colloidal Quantum DotsKoleilat, Ghada 24 February 2009 (has links)
Half of the sun’s power lies in the infrared. As a result, the optimal bandgaps for solar cells in both the single-junction and even the tandem architectures lie beyond 850 nm. However, progress in low-cost, large-area, physically-flexible solar cells has instead been made in organic and polymer materials possessing absorption onsets in the visible. Recent advances have been achieved in solution-cast infrared photovoltaics through the use of colloidal quantum dots. Here we report stable solution-processed photovoltaic devices having 3.6% power conversion efficiency in the infrared. The use of a strongly-bound bidentate linker, benzenedithiol, ensures device stability over weeks. We investigate in detail the physical mechanisms underlying the operation of this class of device. We find that diffusion of electrons and holes over hundreds of nanometers through our PbSe colloidal quantum dot solid is chiefly responsible for the high external quantum efficiencies obtained in this new class of devices.
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Efficient, Stable Infrared Photovoltaics based on Solution-Cast PbSe Colloidal Quantum DotsKoleilat, Ghada 24 February 2009 (has links)
Half of the sun’s power lies in the infrared. As a result, the optimal bandgaps for solar cells in both the single-junction and even the tandem architectures lie beyond 850 nm. However, progress in low-cost, large-area, physically-flexible solar cells has instead been made in organic and polymer materials possessing absorption onsets in the visible. Recent advances have been achieved in solution-cast infrared photovoltaics through the use of colloidal quantum dots. Here we report stable solution-processed photovoltaic devices having 3.6% power conversion efficiency in the infrared. The use of a strongly-bound bidentate linker, benzenedithiol, ensures device stability over weeks. We investigate in detail the physical mechanisms underlying the operation of this class of device. We find that diffusion of electrons and holes over hundreds of nanometers through our PbSe colloidal quantum dot solid is chiefly responsible for the high external quantum efficiencies obtained in this new class of devices.
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