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High resolution infrared interferometry of the interstellar mediumOgden, Peter Michael, January 1981 (has links)
Thesis (Ph. D.)--University of Wisconsin--Madison, 1981. / Typescript. Vita. eContent provider-neutral record in process. Description based on print version record. Includes bibliographical references (leaves 121-126).
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The molecular structure and infra-red spectrum of methane ...Dennison, David Mathias, January 1900 (has links)
Thesis (PH. D.)--University of Michigan, 1924. / Cover-title. "Reprinted for private circulation from the Astrophysical Journal, vol. LXII, no. 2, 1925."
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TLSS and LRS-J probing large scale structure near and far /Tufts, Joseph Rutledge, January 1900 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2005. / Vita. Includes bibliographical references.
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Improving the robustness of multivariate calibration models for the determination of glucose by near-infrared spectroscopyKramer, Kirsten Elizabeth. January 2005 (has links)
Thesis (Ph. D.)--University of Iowa, 2005. / Includes bibliographical references (leaves 272-282).
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Application of infrared imaging to fresh concrete : monitoring internal vibration /Burlingame, Scott Edward, January 1900 (has links)
Thesis (M.S.)--Cornell University, May, 2004. / "PCA R&D serial no. 2806." "©Scott Burlingame 2004. All rights reserved. Reprinted by permission of Scott Burlingame." (Reprinted 2004 by Portland Cement Association, Skokie, Ill.) Includes bibliographical references (p. 460-465).
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Charge carrier manipulation for high performing near-infrared light detectionLi, Ning 23 August 2018 (has links)
Near infrared (NIR) light detection has drawn substantial attentions in a variety of applications. NIR detectors prepared by the solution processable organic semiconductors and organic-inorganic hybrid material systems have the advantages for achieving flexible, light weight and large area NIR detection devices. The aim of this research work is to study the modulation of the photo-generated charge carriers in perovskite and polymer systems for attaining high performing solution-processable NIR phototransistors (PTs) and photodiodes (PDs). In the first part, an organo-lead halide perovskite/polymer bi-layer channel PT is discussed. Compared to the performance of the polymer only PTs, the PTs with a perovskite/polymer hybrid channel exhibit a profound broadband enhancement in photoresponsivity over the light wavelength range from UV to NIR. The improved performance in the hybrid perovskite/polymer PTs is closely associated with the efficient charge separation and transfer between the perovskite and polymer functional layers in the heterojunction. With the success in developing the bi-layer perovskite/polymer PTs, the enhancement in NIR detection is further realized in PTs by incorporating a bulk heterojunction (BHJ) channel. The BHJ channel is formed by blending NIR sensitive polymer donor with three different acceptor materials for enhancing exciton dissociation and charge separation efficiency. It is shown that the use of donor/acceptor BHJ greatly facilitates the dissociation of photo generated excitons. The efficient exciton dissociation helps to boost the utilization of the photo generated excitons, and thereby improves the photoresponsivity. Although the PTs with a BHJ channel possess high photoresponsivity, the photosensitivity of these NIR PTs is still less than satisfactory. The results reveal that a higher activation energy of charge carriers is favorable for a lower carrier density in the channel. While under NIR light illumination, the mobile charge carriers, created due to the dissociation of the photo generated excitons, result in a dramatic increase in carrier density in the active channel. The increase in carrier density under NIR illumination, gives rise to a higher channel current, thereby a higher photosensitivity. A pixel-less NIR imaging device based on light up-conversion from near-infrared to green is demonstrated. A polymer donor/non-fullerene acceptor BHJ serving as the NIR sensitive unit is integrated monolithically with a perovskite-based light emitting diode (LED) unit for achieving light up-conversion from NIR to visible light. The BHJ serves as an NIR sensitive hole injection layer in the perovskite LEDs. Therefore, the efficient electroluminescence in area where NIR-induced efficient charge injection occurs in the LEDs can be displayed clearly, producing the visible light image. The photoresponsivity of perovskite based UV-Visible-NIR photodiodes (PDs) is discussed in the last part of the thesis. A periodic nano-grating hole transporting layer (HTL), formed by the nano-imprinting, is adopted for enhancing the photoresponsivity of the PDs. Theoretical simulation reveals that the periodic nano-grating HTL helps to improve light absorption in the active layer, caused by the enhanced light in-coupling effect. In the meantime, the nano-grating HTL based PDs exhibit weak angular dependency as compared to that of the planar control ones which is appealing for wide angle light detections.
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Applications of near-infrared spectroscopy on certain cereal componentsKokot, Michael Leon 15 May 2014 (has links)
M.Sc. (Chemistry) / Please refer to full text to view abstract
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Some aspects of the infra-red spectra of hydrogen-bonded systemsRobertson, G. N. v.d. H. January 1970 (has links)
No description available.
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Infrared spectroscopic studies of some organotin (IV) and organoantimony (V) derivativesGoel, Ram Gopal January 1965 (has links)
Triphenyl-, trimethyl- and dimethyltin(IV), and trimethylantimony(V) derivatives of a wide variety of acids, including those of very strong acids, as well as derivatives of a transition metal oxyanion, were synthesized. Their structural characteristics in the solid state, under strictly anhydrous conditions, were determined from their infrared spectra. These spectroscopic results can only be interpreted in terms of a very strong interaction between the organometal group and the corresponding anionic group, and provide strong evidence for coordination or partial covalent bonding between the organometal group and the anionic group. Contrary to earlier reports, no evidence is found for the existence of free R₃Sn⁺ , R2Sn²⁺ or R₃Sb²⁺ cations in the solid state. / Science, Faculty of / Chemistry, Department of / Graduate
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Infrared absorption lines in boron-doped silicon.Colbow, Konrad January 1963 (has links)
In boron-doped silicon, optical absorption takes place through the excitation of bound holes from the ground state to excited states. This leads to a line spectrum. Due to a lack of sufficient resolution and a failure to make proper allowance for line distortion by the finite spectrometer slit width previous authors gave a misleading picture of the low temperature half-width, the temperature dependence of this half-width, and the onset of concentration broadening at low temperatures.
New experimental data are explained by introducing the mechanism of statistical Stark broadening due to ionised impurities, and by modifying Baltensperger's (1953) theory for concentration broadening. At low impurity concentration the width is attributed to phonon broadening (Barrie and Nishikawa 1962) and internal strains (Kohn 1957). / Science, Faculty of / Physics and Astronomy, Department of / Graduate
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