Transparent thin film transistors fabricated at room temperature by radio frequency magnetron sputtering using indium oxide material system were proposed. The electrodes of the transparent thin film transistors were obtained by depositing indium oxide with 10% tim doping. Resistivity as low as 4¡Ñ10-4£[-cm at room temperature was achieved. The channel layers of the transparent thin film transistors were fabricated using pure indium oxide target in an Argon and oxygen environment. Resistivity larger than 10-5£[-cm was obtained with 60% oxygen partial pressure. Silicon nitride prepared by room temperature radio frequency sputtering were used for the gate dielectric layer with low leakage current. Environmental-safe lift-off processes were used to fabricated the electrodes, the isolation layer, and the channel layer. The transistor characteristics were obtained by standard I-V measurement. The on-off ratio of the 30£gm ¡Ñ 150£gm transparent thin film transistor is 100.