We have observed a large spin-splitting in device made of AlxGa1-xN/GaN quantum wires. Based on this observation, we proposed a new spintronic application, the spin-hall quantum-ring interferometer, by the spin-Hall effect, Rashba and Dresselhaus effects. This device we use the ICP Etch System to etch the contact pattern, and then use the Multi-Target Sputter to deposit the protecting layer, and then use the E-Beam Evaporator to make the contact. Finally, using the Focus Ion Beam, we fabricate the quantum-ring and gate successfully. This thesis is focused on discussing the design of the fabrication and try to solve the problem in order to be able to detect the signal of the quantum-ring interferometer at low temperature and high magnetic condition.

The Institute of Ion Beam Physics and Materials Research (IIM) is one of the six institutes of the Forschungszentrum Dresden-Rossendorf (FZD), and contributes the largest part to its Research Program \"Advanced Materials\", mainly in the fields of semiconductor physics and materials research using ion beams. The institute operates a national and international Ion Beam Center, which, in addition to its own scientific activities, makes available fast ion technologies to universities, other research institutes, and industry. Parts of its activities are also dedicated to exploit the infrared/THz free-electron laser at the 40 MeV superconducting electron accelerator ELBE for condensed matter research. For both facilities the institute holds EU grants for funding access of external users.

The current semiconductor device manufacturing requires more strict control of plasma etching. In this research, plasma etching was investigated through gas phase characterization and interface reactions. Hydrogen and nitrogen were added to Ar plasmas to manipulate the electro-physical properties that were measured by a Langmuir probe system. Hydrogen addition modified the EEDF (electron energy distribution function) by increasing the electrons in high energy range. Adding N2 formed a strong bi-Maxwellian distribution. Gas addition caused the transition between ohmic and stochastic heating. Ar-CH4-H2 and Ar-N2-H2 plasmas were also tested. Hydrogen atom beam was used on porous silicon dioxide based low-k films to remove silanol groups that were generated due to the damage of films during pattern transfer. At H2 atom beam process at 150 C moved close to 60% silanol groups were removed in less than 3 min with an etching rate of 15 A/min. The apparent activation energy was 2.4 kcal/mol. Hydrogen atoms reacted with Si-O-Si and methyl groups. The etching mechanisms of CH4/H2/Ar plasma for InP were analyzed by a beam reactor system. Sputtering yield was measured, threshold energy was approximately 60 eV. Inert ion beam assisted chemical reactions gave higher etching rate. The CH4 concentration had no strong effect on etching rate after 5%. Etching rate was not sensitive to temperature up to 150 C. The adsorption of methyl groups to the surface was proposed as rate limiting step. Chemical reaction effectively reduced the surface roughness.

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The Institute of Ion Beam Physics and Materials Research (IIM) is one of the six institutes of what was called Forschungszentrum Dresden-Rossendorf (FZD) until the end of 2010, but since this year 2011 is called “Helmholtz-Zentrum Dresden-Rossendorf (HZDR)”. This change reflects a significant transition for us: it means that the research center is now member of the Helmholtz Association of German Research Centers (HGF), i.e., a real government research laboratory, with the mission to perform research to solve fundamental societal problems. Often to date those are called the “Grand Challenges” and comprise issues such as energy supply and resources, health in relation to aging population, future mobility, or the information society. This Annual Report already bears the new corporate design, adequate for the time of its issueing, but reports results from the year 2010, when we were still member of the Leibniz Association (WGL). Our research is still mainly in the fields of semiconductor physics and materials science using ion beams. The institute operates a national and international Ion Beam Center, which, in addition to its own scientific activities, makes available fast ion technologies to universities, other research institutes, and industry. Parts of its activities are also dedicated to exploit the infrared/THz freeelectron laser at the 40 MeV superconducting electron accelerator ELBE for condensed matter research. For both facilities the institute holds EU grants for funding access of external users.

abstract: Nanolaminate composite materials consist of alternating layers of materials at the nanoscale (≤100 nm). Due to the nanometer scale thickness of their layers, these materials display unique and tailorable properties. This enables us to alter both mechanical attributes such as strength and wear properties, as well as functional characteristics such as biocompatibility, optical, and electronic properties. This dissertation focuses on understanding the mechanical behavior of the Al-SiC system. From a practical perspective, these materials exhibit a combination of high toughness and strength which is attractive for many applications. Scientifically, these materials are interesting due to the large elastic modulus mismatch between the layers. This, paired with the small layer thickness, allows a unique opportunity for scientists to study the plastic deformation of metals under extreme amounts of constraint. Previous studies are limited in scope and a more diverse range of mechanical characterization is required to understand both the advantages and limitations of these materials. One of the major challenges with testing these materials is that they are only able to be made in thicknesses on the order of micrometers so the testing methods are limited to small volume techniques. This work makes use of both microscale testing techniques from the literature as well as novel methodologies. Using these techniques we are able to gain insight into aspects of the material’s mechanical behavior such as the effects of layer orientation, flaw dependent fracture, tension-compression asymmetry, fracture toughness as a function of layer thickness, and shear behavior as a function of layer thickness. / Dissertation/Thesis / Doctoral Dissertation Materials Science and Engineering 2016

M.Ing. / Please refer to full text to view abstract