This thesis is focused on the legal protection of the environment and human health from the effects of selected physical factors, especially noise, vibration and ionizing and non- ionizing radiation. In the introduction the thesis defines the every singe physical factor, reminds their effects on the environment and the health and life of humans and especially suggests possible measures to eliminate the negative effects of these factors. The emphasis is placed on clarifying the consistency of these measures with the means of protection. Subsequently, the thesis includes separate chapters devoted to European, Czech and selected international legal instruments of protection from selected physical factors and their comparison. One of the key questions to be dealt in the thesis is the effort to clarify whether and how does the legislation in different countries exploit physical similarity between the studied factors. Another question to answer is to what extent is it (for the effective protection of the environment, life, health and other values) useful to accurately identify and name the sources of threat, and whether the case-focused legal protection, anchoring extensively detailed rules for each previously known source of threat, actually leads to more efficient protection against various sources of risk. It...

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Thesis (Ph.D.)--Flinders University, School of Medicine, Dept. of Haematology and Genetic Pathology. / Typescript bound. Includes bibliographical references: (leaves 248-282) Also available in an electronic version.

Este trabalho apresenta um estudo sobre a degradação de parâmetros elétricos de transistores CMOS tecnologia 0,35 μm, fabricados com o processo AMS C35B4, devido aos efeitos de dose total ionizante. Os efeitos de dose total são resultado do acúmulo de cargas em estruturas dielétricas de dispositivos semicondutores; em transistores MOS, este acúmulo de carga afeta parâmetros elétricos como a tensão de limiar, subthreshold swing, ruído 1/f, corrente de fuga e mobilidade efetiva dos portadores de carga. Com o objetivo de mensurar o impacto dos efeitos de dose total em transistores CMOS 0,35 μm, foi realizado um ensaio de irradiação, submetendo-se transistores de uma tecnologia comercial à radiação ionizante e realizando a caracterização destes dispositivos para diferentes doses totais acumuladas. Os resultados obtidos indicam a degradação dos transistores devido aos efeitos de dose total, bem como apontam a influência da polarização dos dispositivos durante o ensaio de irradiação nesta degradação. Estes resultados podem ser utilizados para, através de simulação elétrica de circuitos, estimar a tolerância à dose total de uma determinada topologia de circuito ou sistema. / This work presents a study on the degradation of electrical parameters of 0,35 μm CMOS transistors, fabricated with an AMS C35B4 process, due to total ionizing dose (TID) effects. The TID effects are the result of the trapping of charges in dielectric structures of semiconductor devices; in MOS transistors, this charge trapping affects electrical parameters such as threshold voltage, subthreshold swing, 1/f noise, leakage current and carrier effective mobility. In order to measure the impact of TID effects on electrical parameters of 0,35μm CMOS transistors, an irradiation test was performed, exposing transistors from a commercial technology to ionizing radiation and characterizing these devices under different total doses. The results obtained in this work indicate transistor degradation due to TID effects, as well as the impact of device polarization during the irradiation test on transistor degradation. These results may be used, through electrical simulation of circuits, to estimate the impact of TID effects on the operation of a circuit or system.

Este trabalho apresenta um estudo sobre a degradação de parâmetros elétricos de transistores CMOS tecnologia 0,35 μm, fabricados com o processo AMS C35B4, devido aos efeitos de dose total ionizante. Os efeitos de dose total são resultado do acúmulo de cargas em estruturas dielétricas de dispositivos semicondutores; em transistores MOS, este acúmulo de carga afeta parâmetros elétricos como a tensão de limiar, subthreshold swing, ruído 1/f, corrente de fuga e mobilidade efetiva dos portadores de carga. Com o objetivo de mensurar o impacto dos efeitos de dose total em transistores CMOS 0,35 μm, foi realizado um ensaio de irradiação, submetendo-se transistores de uma tecnologia comercial à radiação ionizante e realizando a caracterização destes dispositivos para diferentes doses totais acumuladas. Os resultados obtidos indicam a degradação dos transistores devido aos efeitos de dose total, bem como apontam a influência da polarização dos dispositivos durante o ensaio de irradiação nesta degradação. Estes resultados podem ser utilizados para, através de simulação elétrica de circuitos, estimar a tolerância à dose total de uma determinada topologia de circuito ou sistema. / This work presents a study on the degradation of electrical parameters of 0,35 μm CMOS transistors, fabricated with an AMS C35B4 process, due to total ionizing dose (TID) effects. The TID effects are the result of the trapping of charges in dielectric structures of semiconductor devices; in MOS transistors, this charge trapping affects electrical parameters such as threshold voltage, subthreshold swing, 1/f noise, leakage current and carrier effective mobility. In order to measure the impact of TID effects on electrical parameters of 0,35μm CMOS transistors, an irradiation test was performed, exposing transistors from a commercial technology to ionizing radiation and characterizing these devices under different total doses. The results obtained in this work indicate transistor degradation due to TID effects, as well as the impact of device polarization during the irradiation test on transistor degradation. These results may be used, through electrical simulation of circuits, to estimate the impact of TID effects on the operation of a circuit or system.

Este trabalho apresenta um estudo sobre a degradação de parâmetros elétricos de transistores CMOS tecnologia 0,35 μm, fabricados com o processo AMS C35B4, devido aos efeitos de dose total ionizante. Os efeitos de dose total são resultado do acúmulo de cargas em estruturas dielétricas de dispositivos semicondutores; em transistores MOS, este acúmulo de carga afeta parâmetros elétricos como a tensão de limiar, subthreshold swing, ruído 1/f, corrente de fuga e mobilidade efetiva dos portadores de carga. Com o objetivo de mensurar o impacto dos efeitos de dose total em transistores CMOS 0,35 μm, foi realizado um ensaio de irradiação, submetendo-se transistores de uma tecnologia comercial à radiação ionizante e realizando a caracterização destes dispositivos para diferentes doses totais acumuladas. Os resultados obtidos indicam a degradação dos transistores devido aos efeitos de dose total, bem como apontam a influência da polarização dos dispositivos durante o ensaio de irradiação nesta degradação. Estes resultados podem ser utilizados para, através de simulação elétrica de circuitos, estimar a tolerância à dose total de uma determinada topologia de circuito ou sistema. / This work presents a study on the degradation of electrical parameters of 0,35 μm CMOS transistors, fabricated with an AMS C35B4 process, due to total ionizing dose (TID) effects. The TID effects are the result of the trapping of charges in dielectric structures of semiconductor devices; in MOS transistors, this charge trapping affects electrical parameters such as threshold voltage, subthreshold swing, 1/f noise, leakage current and carrier effective mobility. In order to measure the impact of TID effects on electrical parameters of 0,35μm CMOS transistors, an irradiation test was performed, exposing transistors from a commercial technology to ionizing radiation and characterizing these devices under different total doses. The results obtained in this work indicate transistor degradation due to TID effects, as well as the impact of device polarization during the irradiation test on transistor degradation. These results may be used, through electrical simulation of circuits, to estimate the impact of TID effects on the operation of a circuit or system.

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The initiating potential of a range of 4 MeV X-rays was studied using the mouse skin two-stage model of carcinogenesis. A single dose of radiation was followed by promotion with 12-O-tetradecanoyl phorbol-13-acetate (TPA). The effect of TPA on tumor incidence when applied as a single dose 24 hours prior to irradiation was examined. Studies were also designed to investigate the effect of promotion duration on tumor incidence. Animals were promoted with TPA for 10 or 60 weeks. Evidence presented here indicates that ionizing radiation can act as an initiator in this model system. All animals that were promoted with TPA for the same duration had a similar incidence of papillomas (pap) regardless of radiation or TPA pretreatment. However, squamous cell carcinomas (scc) arose only in animals that were initiated with ionizing radiation followed by TPA promotion. Increasing the promotion duration enhanced the incidence of scc at the lower initiation dose. TPA pretreatment at the higher irradiation dose resulted in an overall decrease in tumor incidence. At the lower dose of radiation, TPA pretreatment resulted in an increase in the incidence of scc. The incidence of basal cell carcinomas (bcc) was dose dependent and appeared to be independent of TPA promotion. Although ionizing radiation acts as a weak initiator in mouse skin, the conversion of pap to scc was higher than that reported for chemical initiators. To test this further animals were initiated with N-methyl-N'-nitro-N-nitrosoguanidine (MNNG) followed by biweekly promotion with TPA. After 20 weeks of promotion, the animals were treated with either acetone, TPA or 8 fractions of 1 MeV electrons. Data indicate that the dose and fractionation protocol used in this study enhanced the progression of pre-existing pap. To examine the role of oncogene activation in radiation induced mouse skin tumors, DNA from various tumors (pap, bcc, scc) were examined for the presence of dominant transforming activity by the NIH3T3 and Rat-2 focus assays. Dominant transforming activity was observed in all tumor types but not in normal or treated epidermis or corresponding liver. The transformed phenotype was further confirmed by growth in soft agar and tumorigenicity in Nude mice. Southern blot hybridization to ras (Ha, Ki, N), raf, neu, erbB and β-lym indicate that these genes are not responsible for the observed transforming activity. These data suggest that the oncogenic sequences activated in these tumors are unique. The work presented here also provides evidence for novel c-myc transcripts and corresponding genomic rearrangements in a few of the tumors studied.

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