The master´s thesis deals with a process called cold kinetic deposition technology. Using this technology, a copper layer was formed on a sample with an aluminium base by high-pressure cold spraying at a pressure of 25 bar. In the experimental part, the influence of corrosion degradation in the salt chamber was assessed at the time cycles of 100 h, 200 h and 300h, where changes in internal and surface resistances before and after corrosion were measured. Subsequently, the analysis of corrosion products was performed, where the extent of corrosion attack was determined using an electron microscope. These methods led to a final evaluation of the boundary limits of the applied coating layer by cold kinetic deposition, after the effect of corrosion. Finally, a theoretical application of this technology was suggested. It was discovered that the sample placed and left in the corrosion chamber for the longest time was the most affected by corrosion. Finally, a theoretical application of cold kinetic deposition was proposed.

The purpose of this diploma thesis is to get a better understanding of cold kinetic deposition (cold spray), principles of functioning of this method followed by an evaluation of advantages and disadvantages of cold spray and its comparison to conventional thermal methods and a simple summary of the practical use of cold spray with respect to different materials. Next there is a summary of the properties and uses of frequently applied metals in electrical engineering, aluminium and copper, description of metal corrosion and an understanding of the diagnostic method of acoustic emission. In the practical part, a sample with copper cold spray coating on aluminium substrate was created. Following, this sample was split for corrosion tests, where the split samples were exposed to a corrosive environment for different times of exposure. The extent of corrosion degradation of the samples was evaluated by acoustic emission and metallographic analysis for corrosion-loaded samples for 100, 200 and 300 hours. In the end, an illustrative design of the application of the cold spray technology was created.

Le carbure de silicium est un matériau souvent employé comme matrice dans les composites thermostructuraux. Le précurseur classiquement utilisé pour son élaboration par dépôt/infiltration par voie gazeuse est CH3SiCl3. La thèse vise à évaluer le remplacement de ce précurseur par des précurseurs gazeux bi-sourcés de SiC où carbone et silicium sont apportés séparément.A partir du système SiHCl3/C3H8/H2, l’influence du débit total, de la température, de la pression totale et de (C/Si)gaz sont évaluées et comparées aux résultats obtenus avec le système CH3SiCl3/H2. La mesure in situ de la vitesse de dépôt permet de définir des lois cinétiques apparentes. L’analyse IRTF de la phase gazeuse indique que les évolutions des pressions partielles des différents produits stables sont corrélées avec les transitions cinétiques et les changements de composition du solide. Les simulations numériques de l’évolution de la phase gazeuse montrent une bonne corrélation avec les résultats expérimentaux et permettent de proposer des mécanismes homogènes et hétérogènes qui pourraient expliquer les écarts à la stoechiométrie du dépôt.L’étude de six précurseurs supplémentaires permet de mieux identifier le rôle des principales espèces en phase homogène et hétérogène, et notamment les précurseurs effectifs de dépôt. Enfin, l’étude de l’infiltration de matériaux poreux modèles révèle des améliorations significatives en termes d’homogénéité de vitesse de dépôt.Ainsi, des conditions propices à l’infiltration de carbure de silicium peuvent être obtenues en adaptant la réactivité de la phase gazeuse par la sélection de précurseurs initiaux et des chemins réactionnels qui en découlent. / Silicon carbide (SiC) is material of choice for the matrix of Ceramic Matrix Composites (CMC).CH3SiCl3/H2 mixtures are currently used as gas precursor for the synthesis of the CVI-SiC matrices.The present work considers the dual-source approach with two separate carbon and silicon precursorsmolecules.In the case of SiHCl3/C3H8/H2 mixture, systematic studies of total flow rate, temperature, total pressureand C/Si ratio of initial gaseous phase are realized. Kinetics obtained with growth rate measurements and solid composition are compared with results from CH3SiCl3/H2 mixture. On the basis of the apparent reaction orders and activation energies, experimental kinetic laws are derived. Through IRTF analysis of the gas phase, the partial pressures of the different stable products are correlated with deposition kinetic and solid composition. Results obtained in gas-phase kinetic simulation show a good correlation with the experimental results and a mechanism of homogeneous decomposition is proposed. A better understanding of the role of the principal species in homogenous and heterogeneous phase is obtained through the study of six other gas systems and the roles of some effective precursors are discussed. Finally, infiltration results of porous material models with different precursor systems reveal significant improvements as homogeneity of kinetic deposit.Hence, favourable conditions to silicon carbide infiltration can be obtained by adapting the reactivity of the gas phase, with the choice of initial precursors and homogeneous chemistry associated. Asystematic study of the process evidences promising working windows for the infiltration of pure SiCin porous performs.