This work presents a method based on time domain techniques to characterize and model thick film inductor structures. The method is a time domain reflection (TOR) measurement which measures the input port's reflection transfer function of the component under test. The reflection from a short circuit is acquired as the reference waveform, while the reflection from the sample is acquired as the response waveform. From the information contained in both waveforms the complex impedance Z(jω) of the sample can be calculated. This information is used for modeling the inductor by fitting the data to a network model. This thesis also presents a technique for the modeling and the characterization of multilayer thick film inductors over the frequency range from DC to a few GHz. The modeling technique is based on the use of Time Domain Reflectometry (TDR) measurements to reveal the transmission structure equivalent network of the multilayer thick film inductor. The equivalent network model is then analyzed using a computer network analysis program to characterize the inductor performance. Other thick film inductor structures modeled in this work are: the spiral conductor is printed directly on the ceramic substrate, the spiral is printed on a ferrite layer, the spiral is printed on the substrate with the ferrite layer on top, and finally, two interconnected spiral layers sandwiching ferrite (or dielectric) layers. / M.S.