Spelling suggestions: "subject:"LO photonicplasmonic coupled model"" "subject:"LO nanoplasmon coupled model""
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Raman study of LO phonon-plasmon coupled modes dependence on carrier density in Si:InN filmsTu, Yi-Chou 07 September 2009 (has links)
The purpose of this thesis is to find out carrier concentration in nitride semiconductors by micro Raman measurements. We focus on the Raman measurements of two different III-nitride semiconductors doped with Si. First series is narrow band gap InN films with varying carrier concentration (ne). The highest (ne) in this series is 1.9 X 1019 cm-3. The second series is wide band gap GaN films, with highest (ne) of 8.0 X 1019 cm-3.From the room temperature Ramam measurements ,it is observed that the L- LOPCM (lower branch of longitudinal-optical phonon-plasmon coupled modes) depends on the carrier concentration. We focus the further analysis of this result and try to extract the carrier concentration and compare with electrical measurements.
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