In this doctoral thesis the two dimensional material graphene has been studied in depth with particular respect to Zener tunnelling devices. From the hexagonal structure the Hamiltonian at a Dirac point was derived with the option of including an energy gap. This Hamiltonian was then used to obtain the tunnelling properties of various graphene nano-devices; the devices studied include Zener tunnelling potential barriers such as single and double graphene potential steps. A form of the Landauer formalism was obtained for graphene devices. Combined with the scattering properties of potential barriers the current and conductance was found for a wide range of graphene nano-devices. These results were then compared to recently obtained experimental results for graphene nano-ribbons, showing many similarities between nano-ribbons and infinite sheet graphene. The methods studied were then applied to materials which have been shown to possess three dimensional Dirac cones known as topological insulators. In the case of Cd3As2 the Dirac cone is asymmetrical with respect to the z-direction, the effect of this asymmetry has been discussed with comparison to the symmetrical case.

Neste trabalho, estudamos a influência de canais de espalhamento inelástico no transporte eletrônico. Primeiramente, expomos o formalismo de Landauer usual para o cálculo da corrente elétrica em sistemas em que o espalhamento é puramente elástico. Como exemplo, calculamos a corrente para um potencial delta de Dirac a partir de suas probabilidades de transmissão. A amostra correspondente é aquela de uma camada muito fina com impurezas (não-magnéticas) contida em uma heterostrutura semicondutora. Mostramos que a distorção do potencial quântico devido à voltagem aplicada pode ser desprezada no cálculo da corrente elétrica, abaixo da energia de Fermi do emissor. Subsequentemente, acoplamos o potencial delta a um oscilador harmônico quântico para modelar a presença de fônons no sistema. Encontramos modos inelásticos de transmissão que se tornam acessíveis para energias cada vez maiores, múltiplas do quantum hω. Devido à conservação de probabilidade, a abertura de cada novo canal corresponde a bicos\" nas probabilidades de transmissão dos modos abaixo deste, em função da energia de incidência do elétron. No caso de uma delta atrativa, ressonâncias assimétricas com perfil de Fano são observadas. Adaptamos o formalismo de Landauer, incluindo canais inelásticos independentes. Seguindo um trabalho anterior de Emberly e Kirczenow (2000), mostramos que existe uma forma de se levar em conta possíveis coincidências nos estados de espalhamento finais aplicando o princípio de exclusão de Pauli. Isto leva as distribuições dos estados de espalhamento a estarem fora de equilíbrio, já que dependem umas das outras. Resolvendo o problema auto-consistentemente, somos capazes de obter a corrente elétrica a partir das probabilidades de transmissão do potencial quântico. Nossos resultados demonstram que as ressonâncias de Fano do potencial atrativo dão origem a uma diminuição da inclinação da corrente elétrica contra a voltagem aplicada, já que elétrons são presos\" ao potencial por um tempo infinito. Mostramos este efeito num regime de voltagens baixas em comparação com a energia de Fermi, para o qual desprezamos a distorção do potencial quântico devido à voltagem aplicada. Além disso, uma comparação com os resultados do formalismo de Landauer mostra que uma discrepância significativa é observada para o caso de o oscilador estar inicialmente excitado e fortemente acoplado ao elétron. / In this work, we study the influence of inelastic scattering channels in electronic transport. We first present the usual Landauer formalism, for calculating the electric current in systems where the scattering is purely elastic. As an example, we calculate the current for a Dirac delta potential from its transmission probabilities. The corresponding sample is that of a very thin layer with (non-magnetic) impurities within a semiconductor heterostructure. We show that the distortion of the quantum potential due to the applied voltage can be ignored in the calculation of an electric current below the Fermi energy of the emitter. Then we couple the delta potential to a quantum harmonic oscillator to model the presence of phonons in the system. We find inelastic transmission modes that become available for increasing energies, multiple of the quantum hω. Due to conservation of probability, the opening of each new channel corresponds to kinks\" in the transmission probabilities of lower modes as a function of the energy of the impinging electrons. In the case of an attractive delta potential, asymmetric resonances with a Fano-like profile are observed. We adapt the Landauer formalism by including the independent inelastic channels. Following a previous work by Emberly and Kirczenow (2000), we show that there is a way to take into account the possible coincidences in the final scattering states using Pauli\'s exclusion principle. This causes the distributions of the scattering states to be out of equilibrium, as they depend on each other. Solving the problem self-consistently, we are able to obtain the electric current from the transmission probabilities of the quantum potential. Our results demonstrate that the Fano resonances of the attractive potential gives rise to a decrease of the slope in the electric current versus the applied voltage, as the electrons are trapped\" in the potential for a finite amount of time. We have shown this effect in a low voltage regime with respect to the Fermi energy, for which we ignore the distortion of the quantum potential due to the applied voltage. Furthermore, a comparison with the results from the Landauer formalism shows that a significant discrepancy is seen for the oscillator initially in its excited mode and strongly coupled to the electron.

Neste trabalho, estudamos a influência de canais de espalhamento inelástico no transporte eletrônico. Primeiramente, expomos o formalismo de Landauer usual para o cálculo da corrente elétrica em sistemas em que o espalhamento é puramente elástico. Como exemplo, calculamos a corrente para um potencial delta de Dirac a partir de suas probabilidades de transmissão. A amostra correspondente é aquela de uma camada muito fina com impurezas (não-magnéticas) contida em uma heterostrutura semicondutora. Mostramos que a distorção do potencial quântico devido à voltagem aplicada pode ser desprezada no cálculo da corrente elétrica, abaixo da energia de Fermi do emissor. Subsequentemente, acoplamos o potencial delta a um oscilador harmônico quântico para modelar a presença de fônons no sistema. Encontramos modos inelásticos de transmissão que se tornam acessíveis para energias cada vez maiores, múltiplas do quantum hω. Devido à conservação de probabilidade, a abertura de cada novo canal corresponde a bicos\" nas probabilidades de transmissão dos modos abaixo deste, em função da energia de incidência do elétron. No caso de uma delta atrativa, ressonâncias assimétricas com perfil de Fano são observadas. Adaptamos o formalismo de Landauer, incluindo canais inelásticos independentes. Seguindo um trabalho anterior de Emberly e Kirczenow (2000), mostramos que existe uma forma de se levar em conta possíveis coincidências nos estados de espalhamento finais aplicando o princípio de exclusão de Pauli. Isto leva as distribuições dos estados de espalhamento a estarem fora de equilíbrio, já que dependem umas das outras. Resolvendo o problema auto-consistentemente, somos capazes de obter a corrente elétrica a partir das probabilidades de transmissão do potencial quântico. Nossos resultados demonstram que as ressonâncias de Fano do potencial atrativo dão origem a uma diminuição da inclinação da corrente elétrica contra a voltagem aplicada, já que elétrons são presos\" ao potencial por um tempo infinito. Mostramos este efeito num regime de voltagens baixas em comparação com a energia de Fermi, para o qual desprezamos a distorção do potencial quântico devido à voltagem aplicada. Além disso, uma comparação com os resultados do formalismo de Landauer mostra que uma discrepância significativa é observada para o caso de o oscilador estar inicialmente excitado e fortemente acoplado ao elétron. / In this work, we study the influence of inelastic scattering channels in electronic transport. We first present the usual Landauer formalism, for calculating the electric current in systems where the scattering is purely elastic. As an example, we calculate the current for a Dirac delta potential from its transmission probabilities. The corresponding sample is that of a very thin layer with (non-magnetic) impurities within a semiconductor heterostructure. We show that the distortion of the quantum potential due to the applied voltage can be ignored in the calculation of an electric current below the Fermi energy of the emitter. Then we couple the delta potential to a quantum harmonic oscillator to model the presence of phonons in the system. We find inelastic transmission modes that become available for increasing energies, multiple of the quantum hω. Due to conservation of probability, the opening of each new channel corresponds to kinks\" in the transmission probabilities of lower modes as a function of the energy of the impinging electrons. In the case of an attractive delta potential, asymmetric resonances with a Fano-like profile are observed. We adapt the Landauer formalism by including the independent inelastic channels. Following a previous work by Emberly and Kirczenow (2000), we show that there is a way to take into account the possible coincidences in the final scattering states using Pauli\'s exclusion principle. This causes the distributions of the scattering states to be out of equilibrium, as they depend on each other. Solving the problem self-consistently, we are able to obtain the electric current from the transmission probabilities of the quantum potential. Our results demonstrate that the Fano resonances of the attractive potential gives rise to a decrease of the slope in the electric current versus the applied voltage, as the electrons are trapped\" in the potential for a finite amount of time. We have shown this effect in a low voltage regime with respect to the Fermi energy, for which we ignore the distortion of the quantum potential due to the applied voltage. Furthermore, a comparison with the results from the Landauer formalism shows that a significant discrepancy is seen for the oscillator initially in its excited mode and strongly coupled to the electron.

This thesis aims at investigating size dependence of properties of nanostructures from the point of view of a general scaling theory that smoothly connects properties of the bulk to that of nanostructures. Two different examples of a ``static'' and a ``dynamic'' property are considered in this study. The first example studied is of size dependence of coefficient of thermal expansion (CTE) which a static property of nanostructures. The CTE of nanobars and nanoslabs is studied using equilibrium molecular dynamics and dynamical matrix formulation in an electrically insulating medium. It is found that the fractional change in CTE from the bulk value scales inversely with the size of the nanostructures, thus, showing a simple description in terms of a scaling theory. In the second part, electron transport in carbon nanotube field effect transistors (CNTFETs) is studied using Landauer formalism. A CNTFET involves transport through a 1-d ballistic carbon nanotube channel with Schottky barriers (SB) at contacts which determines the transport characteristics. The CNT is modeled as a 1-d semiconductor having only two bands separated by an energy gap which depends inversely on tube diameter. After the contact is made, a self-consistent potential appears due to charge transfer between CNT and metal, which is calculated by solving Poisson equation. The electron transmission across the barriers is calculated using WKB approximation. Current and conductance are calculated using Landauer-Buttiker formula. Diameter dependence of properties like, conductance, threshold voltage, VON, etc. is calculated. It is found that there is no simple scaling for a property for small values of diameter. The scaling form is, however, found to be valid for larger diameters. Also, other calculated device characteristics are in close agreement with experiments. The model presented in this thesis is the first detailed study illustrating the applicability of the scaling approach to the properties of nanostructures. The static properties show scaling behavior, while ``dynamic'' properties derived from electronic response do not.