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No description available.

No description available.

No description available.

No description available.

Accurate small and large-signal models of metal-semiconductor field effect transistor (MESFET) devices are essential in all modern microwave and millimeter wave applications. Those models are used for robust designs and fabrication development. The sophistication of modern communication systems urged the need of monolithic microwave integrated circuits (MMICs), which consists of many MESFETs on the same chip. As the chip density increases, the need of accurate MESFET models becomes more pronounced. In this study, a new technique has been developed to extract a 15-element small signal model of MESFET devices. This technique implies the use of three sets of S-parameter measurements at different bias conditions. The technique consists of two major steps; in the first step, some of the bias-independent extrinsic parameters are estimated in preparation for the second step. In the second step, all other parameters should be extracted at the bias point of interest. This technique shows reliable results. Unlike other optimization techniques, our proposed technique shows insensitivity to the unavoidable measurement errors over any frequency range. It shows a unique solution for all parameter values. This technique has been tested on S-parameters of a hypothetical device model and compared with other optimization-based extraction techniques. Moreover, it has been also applied to GaAsTEK 0.8x300 μm2 MESFETs to extract the model parameters at different bias voltages. The study reveals accurate and consistent results among the similar devices on the same wafer. Some thermal characteristics of the small-signal parameters are discussed. The parameters are extracted from measurements at three temperatures for two similar devices on the same wafer. The thermal results of the two devices demonstrate consistent results, which assure the preciseness, and robustness of our proposed technique. In addition, the relation between the small-signal model parameters and the large signal model parameters is also presented. The parameters of an empirical model for the drain-source current are extracted from the dc measurements along with the small-signal transconductance and output conductance. The large-signal model results for a GaAsTEK 0.8x300 μm2 MESFET are introduced. / Ph. D.

This work presents a modeling methodology that uses new types of models called low-frequency, large-signal models in a circuit simulator (Saber) to model a complex hybrid ac/dc power electronics system. The new achievement in this work is being able to model the different components as circuit-based models and to capture some of the large-signal phenomena, for example, real transient behavior of the system such as startup, inrush current and power flow directionality. In addition, models are capable of predicting most low frequency harmonics only seen in real switching detailed models. Therefore the new models system can be used to predict steady state performance, harmonics, stability and transients. This work discusses the modeling issues faced based on the author recent experiences both on component level and system level. In addition, it recommends proper solutions to these issues verified with simulations. This work also presents one of the new models in detail, a voltage source inverter (VSI), and explains how the model can be modified to capture low frequency harmonics that are usually phenomena modeled only with switching models. The process of implementing these different phenomena is discussed and the model is then validated by comparing the results of the proposed low frequency large signal (LFLS) model to a complete detailed switching model. In addition, experimental results are also obtained with a 2 kW voltage source inverter prototype to validate the proposed improved average model (LFLS model). In addition, a complete Verification, Validation, and Uncertainty Quantification (VV&UQ) procedures is applied to a two-level boost rectifier. The goal of this validation process is the improvement of the modeling procedure for power electronics systems, and the full assessment of the boost rectifier model predictive capabilities. Finally, the performance of the new models system is compared with the detailed switching models system. The LFLS models result in huge cut in simulation time (about 10 times difference) and also the ability to use large time step with the LFLS system and still capture all the information needed. Even though this low frequency large signal (LFLS) models system has wider capabilities than ideal average models system, it still can’t predict all switching phenomena. Therefore, another benefit of this modeling approach is the ability to mix different types of models (low frequency large signal (LFLS) and detailed switching) based on the application study they are used for. / Ph. D.

The continuous conduction mode (CCM) boost, buck-boost and buck-boost derived pulse-width modulation dc-dc converters suffer from the large-signal control-to-output nonlinearity. Without feedback control, the large-signal control-to-output nonlinearity would lead to output overregulation and even damage the components. The control gain is defined as the ratio of output voltage to control signal. The small-signal control gain is defined as differentiating output voltage with respect to control signal. Feedback control helps to make the output trace the reference signal. A large-signal control-to-output linearity is established. Compared with open loop control, the feedback loop design is complex; and the feedback control might suffer from the instability caused by the negative small-signal control gain, which is due to the loss and parasitic in practice. Except feedback control, open loop linearization methods can also realize the large-signal control-to-output linearity. A modulated-ramp pulse-width modulation generator is introduced in [6]. A current source works as the control signal. A capacitor is charged by the current source, whose voltage works as the carrier and compared with a constant dc bias voltage to determine the duty cycle. When applying this method to boost, buck-boost and buck-boost derived PWM dc-dc converters, a large-signal control-to-output linearity is established. However, the control gain is dependent on the input voltage; it cannot maintain constant when input voltage varies. A feedforward pulse width modulator is introduced in [39] to realize a large-signal control-to-output linearity. The static conversion ratio is divided into numerator and denominator as the functions of duty cycle. An integrator with reset clock signal helps to determine the right timing. The control gain is ideally constant and independent of input voltage. However, the mismatch between the integrator time constant and the switching period would result in a nonlinear control gain, which is dependent on the input voltage. In the thesis work, a self-oscillating unified linearizing modulator is introduced. It first provides a unified procedure to establish a large-signal control-to-output linearity for different pulse-width modulation dc-dc converters. Feedforward is employed to mitigate the impact from line voltage. Self-oscillation is adopted to provide the internal clock signal and to determine the switching frequency. A constant control gain is obtained, independent on the input voltage or the mismatch between clock signals. The modulator is constructed by three simple and standard building blocks. With the considerations of parasitic components and loss, how to design the constant gain, which excludes the negative small-signal control gain within the entire control signal range, is analyzed and discussed. The performance of this self-oscillating unified linearizing modulator is verified by experiments. The impacts from propagation delay in practical components are taken into considerations, which improves the quality of generated signals. Combined with a boost converter, a good large-signal control-to-output linearization is demonstrated. In the future work, the small-signal control-to-output transfer function is first deduced based on the SOUL modulator. Bode plots show the unique characteristic based on the SOUL modulator compared with the conventional modulator. Next, the impacts from this unique characteristic to feedback loop design and dynamic performance are discussed. / Master of Science

Les transistors à haute mobilité d’électrons (HEMTs) en nitrure de gallium (GaN) s’affirment comme les candidats prometteurs pour les futurs équipements à micro-ondes - tels que les amplificateurs de puissance à état solide (SSPA), grâce à leurs excellentes performances. Une première démonstration d'émetteur en technologie GaN-MMIC a été développée et embarquée dans la mission spatiale PROBA-V. Mais cette technologie souffre encore des effets de pièges par des défauts présents au sein de la structure. L’objectif de ce travail est donc l'étude d’effets de pièges et des aspects de fiabilité des transistors de puissance GH50 pour des applications en bande C. Un protocole d’investigation des phénomènes de pièges est présenté, qui permet l’étude des dynamiques des effets de pièges du mode de fonctionnement DC au mode de fonctionnement radiofréquence, basé sur la combinaison des mesures IV impulsionnelles, des mesures de transitoires du courant de drain avec des impulsions DC et RF et des mesures de paramètres [S] en basse fréquence. Un modèle de HEMT AlGaN/GaN non-linéaire électrothermique est présenté, incluant un nouveau modèle thermique de pièges restituant le comportement dynamique de ces pièges et leurs variations en température afin de prédire correctement les performances en conditions réelles de fonctionnement RF. Enfin, une méthodologie temporelle pour l’évaluation de la fiabilité et de limites réelles d'utilisation de transistors dans l'amplificateur de puissance RF en régime d’overdrive (très forte compression), basée sur la mesure monitorée de Formes d'Onde Temporelles (FOT), est proposée. / GaN-based high electron mobility transistors (HEMTs) are promising candidates for future microwave equipment, such as new solid state power amplifiers (SSPAs), thanks to their excellent performance. A first demonstration of GaN-MMIC transmitter has been developed and put on board the PROBA-V mission. But this technology still suffers from the trapping phenomena, principally due to lattice defects. Thus, the aim of this research is to investigate the trapping effects and the reliability aspects of the GH50 power transistors for C-band applications. A new trap investigation protocol to obtain a complete overview of trap behavior from DC to radio-frequency operation modes, based on combined pulsed I/V measurements, DC and RF drain current measurements, and low-frequency dispersion measurements, is proposed. Furthermore, a nonlinear electro-thermal AlGaN/GaN model with a new additive thermal-trap model including the dynamic behavior of these trap states and their associated temperature variations is presented, in order to correctly predict the RF performance during real RF operating conditions. Finally, an advanced time-domain methodology is presented in order to investigate the device’s reliability and to determine its safe operating area. This methodology is based on the continual monitoring of the RF waveforms and DC parameters under overdrive conditions in order to assess the degradation of the transistor characteristics in the RF power amplifier.

Este trabalho apresenta o desenvolvimento de uma plataforma para o estudo teórico e experimental de dispositivos amplificadores de micro-ondas do tipo válvula de ondas progressivas (TWT). A plataforma é composta por um modelo matemático e uma bancada de testes. O modelo matemático descreve a TWT como uma linha de transmissão acoplada a um feixe eletrônico unidimensional, onde as forças de carga espacial AC e DC são calculadas auto consistentemente, eliminando-se a necessidade de um cálculo separado para o fator de redução de carga espacial. O modelo matemático deu origem a dois códigos para a simulação da TWT. Ambos foram comparados com resultados experimentais e teóricos disponíveis na literatura especializada para uma pré-validação. O nível de concordância entre os presentes resultados e aqueles de referência foi acima de 90%, o que atendeu as expectativas de exatidão do modelo, tendo em vista que nem todos os parâmetros de entrada estavam disponíveis na referência. A bancada de testes construída é composta por uma TWT com banda de operação de 6,0 a 18 GHz e potência saturada máxima em torno de 55 dBm (316 W) em 13 GHz, um circuito de polarização para a mesma e a instrumentação necessária para a realização das medidas pertinentes aos amplificadores de potência. A TWT em questão foi caracterizada segundo seu comportamento mono-sinal e multi-sinal. As curvas de ganho e potência foram obtidas em função da frequência utilizando a voltagem de aceleração do feixe eletrônico e a potência de entrada como parâmetros. As curvas de transferência de potência, de fase e compressão de ganho foram obtidas para frequências escolhidas ao longo da banda, tendo novamente a voltagem de aceleração como parâmetro. Adicionalmente, a produção de produtos de intermodulação de terceira ordem foi caracterizada no ponto de 1 dB de compressão de ganho ao longo da banda analisada. Um teste de linearização por injeção de sinais, que estava previsto no plano de trabalho, não apresentou o desempenho esperado devido a problemas no funcionamento do circuito linearizador. Esses problemas foram analisados e listou-se uma série de passos para saná-los. / This work deals with the development of a platform for theoretical and experimental investigations of microwave amplifiers devices of the type traveling-wave tube (TWT). The platform consists of a mathematical model and a test bench. The mathematical model describes the TWT as a transmission line coupled to a onedimensional electron beam, in which the AC and DC space charge forces are calculated self-consistently, eliminating the need for a separate calculation for the space charge reduction factor. The mathematical model gave rise to two codes for the simulation of TWTs. Both codes were validated against experimental and theoretical results available in the literature. The overall level of agreement between the present results and those from the reference was above 90%, which was considered satisfactory since not all input parameters were available in the reference. The test bench consists of a wideband TWT operating from 6.0 to 18 GHz and maximum saturated power around 55 dBm (316 W) at 13 GHz, a biasing circuit, and the instrumentation needed to perform the relevant measurements to the power amplifier. The TWT in question was characterized according to its mono-signal and multi-signal behavior. The gain and power curves were obtained as a function of the frequency using the beam voltage and the input power as parameters. The curves of power transfer, phase transfer and gain compression were obtained for selected frequencies along the operating band, again, using the beam voltage as a parameter. Furthermore, the production of third-order intermodulation products was measured at the 1 dB gain compression point over the band analyzed. A linearization test applying the signal injection technique, which was part of the initial work plan, presented inadequate performance due to problems in the linearizer circuit operation. These problems were analyzed and a guide to solve them was provided.