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Study on the Lead Magnesium Titanate Gate H+ Ion Sensitive Field Effect TransistorsJan, Pei-Jane 04 July 2001 (has links)
In this thesis, the a-PMT (amorphous lead magnesium titanate) membranes have been prepared by sol-gel technique as H+ ion sensitive layers. The C-V measurements of the a-PMT/SiO2/Si EIS structures prepared by spin-on coating are used for examining the fabrication parameters and sensing properties. There exhibits the quasi-Nerstain response of 55¡V59 mV/pH in the range of pH 2¡V12, fabricated with the Mg-modified content of 4 mole%, the firing temperature of about 400 ¢J and the thickness of about 0.5
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