We study the properties of m-plane GaN structure on LiAlO 2 substrate grown by plasma-assisted molecular-beam epitaxy (PAMBE). Lattice parameters of LiAlO 2 are close to GaN, the interface between LiAlO 2 and GaN showed a good lattice matching. Low lattice mismatch can reduce the defect generation, improve crystal quality. However, lattice mismatch still exist, more or less density of defect still can be observed. The density of defect was reduced in the sample at high temperature. In this study, we investigate GaN on LiAlO 2 by scanning electron microscope (SEM), atomic force microscope (AFM), photoluminescence (PL) and X-ray diffraction (XRD) for different growth temperatures.