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Lighted push button switches and indicators serve many purposes in cockpits, shipboard applications and military ground vehicles. The quality of lighting produced by switches is vital to operators' understanding of the information displayed. Utilizing LED technology in lighted switches has challenges that can adversely affect lighting quality. Incomplete data exists to educate consumers about potential differences in LED switch performance between different manufacturers. LED switches from four different manufacturers were tested for six attributes of lighting quality: average luminance and power consumption at full voltage, sunlight readable contrast, luminance contrast under ambient sunlight, legend uniformity, and dual-color uniformity. Three of the four manufacturers have not developed LED push button switches that meet lighting quality standards established with incandescent technology.

Transient electroluminescence (EL) was used to measure the onset of emission delay in OLEDs based on transition metal, phosphorescent bis[3,5-bis(2-pyridyl)-1,2,4-triazolato] platinum(ΙΙ) and rare earth, phosphorescent Eu(hfa)3 with 4'-(p-tolyl)-2,2":6',2" terpyridine (ttrpy) doped into 4,4'-bis(carbazol-9-yl) triphenylamine (CBP), from which the carrier mobility was determined. For the Pt(ptp)2 doped CBP films in OLEDs with the structure: ITO/NPB (40nm)/mcp (10nm)/65% Pt(ptp)2:CBP (25nm)/TPBI (30nm)/Mg:Ag (100nm), where NPB=N, N'-bis(1-naphthyl)-N-N'-biphenyl-1, 1'-biphenyl-4, MCP= N, N'-dicarbazolyl-3,5-benzene, TPBI=1,3,5-tris(phenyl-2-benzimidazolyl)-benzene, delayed recombination was observed and based on its dependence on frequency and duty cycle, ascribed to trapping and de-trapping processes at the interface of the emissive layer and electron blocker. The result suggests that the exciton recombination zone is at, or close to the interface between the emissive layer and electron blocker. The lifetime of the thin films of phosphorescent emitter Pt(ptp)2 were studied for comparison with rare earth emitter Eu(hfa)3. The lifetime of 65% Pt(ptp)2:CBP co-film was around 638 nanoseconds at the emission peak of 572nm, and the lifetime of neat Eu(hfa)3 film was obtained around 1 millisecond at 616 nm, which supports the enhanced efficiency obtained from the Pt(ptp)2 devices. The long lifetime and narrow emission of the rare earth dopant Eu(hfa)3 is a fundamental factor limiting device performance. Red organic light emitting diodes (OLEDs) based on the rare earth emitter Eu(hfa)3 with 4'-(p-tolyl)-2,2":6',2" terpyridine (ttrpy) complex have been studied and improved with respect performance. The 4.5% Eu(hfa)3 doped into CBP device produced the best power efficiency of 0.53 lm/W, and current efficiency of 1.09 cd/A. The data suggests that the long lifetime of the f-f transition of the Eu ion is a principal limiting factor irrespective of how efficient the energy transfer from the host to the dopant and the antenna effect are.

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