Domain wall dynamics is the one of the most interesting topics in the field of Spintronics because of its potential applications in the development of memory devices. These studies of dynamics are particularly focused on dilute magnetic semiconductors (DMS) or ferromagnetic semiconductors, which are believed to be one of the future materials for Spintronics devices. Despite the fact that the Curie temperature of these DMS is still lower than room temperature the knowledge gained in this study can be applicable to other DMS systems and will unravel new phenomena for the dynamic behavior of domain walls. In this work the dynamic behavior of magnetic domain walls in (Ga, Mn) (As, P) nanometric layers was studied. This was achieved with the use of longitudinal Kerr microscopy working at cryogenic temperature. The domain wall displacements were measured with the application of high enough magnetic fields for very short durations at two different temperatures. These magnetic fields were applied with the help of homemade microcoils used for the first time in this kind of study on DMS. A comparison is shown with the previous results obtained on the same material with a different magnetic anisotropy. The results show very high domain wall velocities for this type of material, not reported previously. The velocity curves clearly show two distinct regions with different mobilities. Finally quantitative analyses are presented to explain these velocities.