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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Design, Analysis And Characterization Of Torsional MEMS Varactor

Venkatesh, C 05 1900 (has links)
Varactors form an important part of many communication circuits. They are utilized in oscillators, tunable matching networks, tunable filters and phase-shifters. This thesis deals with the design, analysis, characterization and applications of a novel MEMS varactor. Lower actuation voltage and higher dynamic range are the two important issues widely addressed in the study of MEMS varactors. The pull-in instability, due to which only 33% of the gap between plates could be covered smoothly, greatly reduces useful dynamic range of MEMS varactors. We propose a torsional MEMS varactor that exploits “displacement amplification” whereby pull-in is overcome and wide dynamic range is achieved. The torsion beam in the device undergoes torsion as well as bending. Behavior of the device has been analyzed through torque and force balance. Based on the torque balance and the force balance expressions, theoretical limits of torsion angle and bending for stable operation have been derived. Torsional MEMS varactors and its variants are fabricated through a commercial fabrication process (polyMUMPS) and extensive characterization has been carried out. Capacitance-voltage characteristics show a maximum dynamic range of 1:16 with parasitic capacitance subtracted out from the capacitance values. A bidirectional torsional varactor, in which the top AC plate moves not only towards bottom plate but also away from bottom plate, is also tested. The bottom AC plate is isolated from low resistivity substrate with a thin nitride layer. This gives rise to large parasitic capacitances at higher frequencies. So to avoid this, a varactor with both AC plates suspended in air is designed and fabricated. A dynamic range of 1:8 including parasitic capacitances has been achieved. Self-actuation is studied on fabricated structures and a torsional varactor that overcomes self-actuation has been proposed. Hysteresis behavior of the torsional varactor is analyzed for different AC signals across the varactor plates. Effects of residual stress on C-V characteristics are studied and advantages and disadvantages of residual stress on device performance are discussed. The torsional varactors have been cycled between Cmax and Cmin for 36 hours continuously without any failure. High-frequency characteristics of torsional varactors are analyzed through measurements on one-port and two port configurations. Measurements are done on polyMUMPS devices to study the capacitance variation with voltage, quality factor (Q) and capacitance variation with frequency. Effects of substrate are de-embedded from the device and characteristics of device are studied. An analog phase shifter based on torsional varactor proposed and analyzed through HFSS simulations. Very high tuning range can be achieved with a LC-VCO based on torsional varactors. A LC VCO with the torsional varactor as a capacitor in LC tank is designed. The torsional varactor and IC are fabricated separately and are integrated through wire bonding. Bond-wires are used as inductors.
2

Novel RF MEMS Devices Enabled by Three-Dimensional Micromachining

Shah, Umer January 2014 (has links)
This thesis presents novel radio frequency microelectromechanical (RF MEMS) circuits based on the three-dimensional (3-D) micromachined coplanar transmission lines whose geometry is re-configured by integrated microelectromechanical actuators. Two types of novel RF MEMS devices are proposed. The first is a concept of MEMS capacitors tuneable in multiple discrete and well-defined steps, implemented by in-plane moving of the ground side-walls of a 3-D micromachined coplanar waveguide transmission line. The MEMS actuators are completely embedded in the ground layer of the transmission line, and fabricated using a single-mask silicon-on-insulator (SOI) RF MEMS fabrication process. The resulting device achieves low insertion loss, a very high quality factor, high reliability, high linearity and high self actuation robustness. The second type introduces two novel concepts of area efficient, ultra-wideband, MEMS-reconfigurable coupled line directional couplers, whose coupling is tuned by mechanically changing the geometry of 3-D micromachined coupled transmission lines, utilizing integrated MEMS electrostatic actuators. The coupling is achieved by tuning both the ground and the signal line coupling, obtaining a large tuneable coupling ratio while maintaining an excellent impedance match, along with high isolation and a very high directivity over a very large bandwidth. This thesis also presents for the first time on RF nonlinearity analysis of complex multi-device RF MEMS circuits. Closed-form analytical formulas for the IIP3 of MEMS multi-device circuit concepts are derived. A nonlinearity analysis, based on these formulas and on  measured device parameters, is performed for different circuit concepts and compared to the simulation results of multi-device  conlinear electromechanical circuit models. The degradation of the overall circuit nonlinearity with increasing number of device stages is investigated. Design rules are presented so that the mechanical parameters and thus the IIP3 of the individual device stages can be optimized to achieve a highest overall IIP3 for the whole circuit.The thesis further investigates un-patterned ferromagnetic NiFe/AlN multilayer composites used as advanced magnetic core materials for on-chip inductances. The approach used is to increase the thickness of the ferromagnetic material without increasing its conductivity, by using multilayer NiFe and AlN sandwich structure. This suppresses the induced currents very effectively and at the same time increases the ferromagnetic resonance, which is by a factor of 7.1 higher than for homogeneous NiFe layers of same thickness. The so far highest permeability values above 1 GHz for on-chip integrated un-patterned NiFe layers were achieved. / <p>QC 20140328</p>

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