Dans cette thèse, nous étudions l’effet du désordre magnétique sur les propriétés de transport électronique du graphène et des isolants topologiques 2D de type HgTe. Le graphène et les isolants topologiques sont des matériaux dont les excitations électroniques sont assimilées à des fermions de Dirac sans masse. L’influence des impuretés magnétiques sur les propriétés de transport du graphène est étudiée dans le régime de forts champs électriques. En conséquence de la production de paires électron-trou, la réponse devient non linéaire et dépend de la polarisation magnétique. Nous étudions une transition entre un isolant topologique bi-dimensionnel conducteur, caractérisé par une conductance G = 2 (en quantum de conductance) et un isolant de Chern avec G = 1, induite par des impuretés magnétiques polarisées. / In this thesis, we study the effect of a magnetic disorder on the electronic transport properties of graphene and HgTe-type 2D topological insulators. Graphene and topological insulators are materials whose electronic excitations are treated as massless Dirac fermions.The influence of magnetic impurities on the transport properties of graphene is investigated in the regime of strong applied electric fields. As a result of electron-hole pair creation, the response becomes nonlinear and dependent on the magnetic polarization.We investigate a transition between a two-dimensional topological insulator conduction state, characterized by a conductance G = 2 (in conductance quantum) and a Chern insulator with G = 1, induced by polarized magnetic impurities.

Dans une première partie nous explorerons les effets d'impuretés désordonnées et paramagnétiques sur l'effet spin-Hall intrinsèque dans un gaz d'électrons bi-dimensionnel avec un couplage spin-orbite de Rashba. A faible désordre, la conductivité de spin-Hall reste proche de sa valeur d'échantillon pur, comme le montrent un calcul analytique de réponse linéaire et une étude numérique. De fortes fluctuations sont toutefois observées, elles augmentent avec l'importance du désordre. Pour caractériser la dynamique d'un paquet d'onde sur un réseau, nous mesurons sa taille, le taux de participation inverse, et sa dimension de corrélation. Le système subit une transition de localisation à une valeur critique du désordre. Dans le régime localisé, la densité locale d'états n'est plus uniforme et ne coïncide plus avec la densité totale d'états. Une corrélation antiferromagnétique entre les impuretés et les électrons de conduction est observée. Après la transition de localisation, la conductivité de spin augmente significativement. La première correction quantique dans le formalisme de réponse linéaire, contribue positivement à la conductivité de spin-Hall. Dans une seconde partie, le modèle de Hubbard avec double échange avec corrélations électroniques est étudié par la méthode du champ moyen dynamique (DMFT) dans l'approximation de non-croisement pour la résolution du problème d'impureté (NCA). Autour du quart remplissage, un polaron orbital est observé et décrit à l'aide d'un Hamiltonien effectif. Le double échange dans les semi-conducteurs magnétiques dilués est étudié dans l'approximation du potentiel cohérent (CPA). / Spintronics is a research area that is concerned with the storage and transfer of information by means of electron spins. In the first part we investigated the intrinsic spin Hall effect in the presence of disordered magnetic impurities in a paramagnetic state in a two dimensional electron gas with Rashba spin-orbit coupling. In the presence of weak magnetic disorder the spin Hall conductivity stays close to its universal (clean system) value, as shown by analytical linear response calculations and numerical simulations. Heavy spin conductivity fluctuations are observed, that increase with disorder strength. To investigate the spreading of a wavepacket on a lattice we measure the wavepacket width, the inverse participation ratio and the (2)-fractal dimension. It is shown the system undergoes a localization transition at a critical disorder strength. In the localized regime the local density of states is not uniform anymore. An anti-ferromagnetic correlation between electron spins and impurity magnetic moments is observed. Beyond the localization transition the spin conductivity increases significantly. The first quantum (Cooperon) corrections in the linear response formalism are shown to contribute positively to the spin Hall conductivity. In the second part the double exchange Hubbard model for correlated electron systems is studied using dynamical mean field theory (DMFT) with the non-crossing approximation (NCA). Around quarter filling an orbital polaron is observed, numerically and in an effective Hamiltonian. Double exchange in dilute magnetic semiconductors is studied using the coherent potential approximation (CPA).

Manipulation of ferromagnetic (FM) spins (and spin textures) using an antiferromagnet (AFM) as an active element in exchange coupled AFM/FM heterostructures is a promising branch of spintronics. Recent ground-breaking experimental demonstrations, such as electrical manipulation of the interfacial exchange coupling and FM spins, as well as ultrafast control of the interfacial exchange-coupling torque in AFM/FM heterostructures, have paved the way towards ultrafast spintronic devices for data storage and neuromorphic computing device applications.[5,6] To achieve electrical manipulation of FM spins, AFMs offer an efficient alternative to passive heavy metal electrodes (e.g., Pt, Pd, W, and Ta) for converting charge current to pure spin current. However, AFM thin films are often integrated into complex heterostructured thin film architectures resulting in chemical, structural, and magnetic disorder. The structural and magnetic disorder in AFM/FM-based spintronic devices can lead to highly undesirable properties, namely thermal dependence of the AFM anisotropy energy barrier, fluctuations in the magnetoresistance, non-linear operation, interfacial spin memory loss, extrinsic contributions to the effective magnetic damping in the adjacent FM, decrease in the effective spin Hall angle, atypical magnetotransport phenomena and distorted interfacial spin structure. Therefore, controlling the magnetic order down to the nanoscale in exchange coupled AFM/FM-based heterostructures is of fundamental importance. However, the impact of fractional variation in the magnetic order at the nanoscale on the magnetization reversal, magnetization dynamics, interfacial spin transport, and the interfacial domain structure of AFM/FM-based heterostructures remains a critical barrier. To address the aforementioned challenges, we conduct a comprehensive experimental investigation of chemical, structural, magnetization reversal (integral and element-specific), magnetization dynamics, and magnetotransport properties, combined with high-resolution magnetic imaging of the exchange coupled Ni3Fe/IrMn3-based heterostructures. Initially, we study the chemical, structural, electrical, and magnetic properties of epitaxially textured MgO(001)/IrMn3(0-35 nm)/Ni3Fe(15 nm)/Al2O3(2.0 nm) heterostructures. We reveal the impact of magnetic field annealing on the interdiffusion at the IrMn3/Ni3Fe interface, electrical resistivity, and magnetic properties of the heterostructures. We further present an AFM IrMn3 film thickness dependence of the exchange bias field, coercive field, magnetization reversal, and magnetization dynamics of the exchange coupled heterostructures. These experiments reveal a strong correlation between the chemical, structural and magnetic properties of the IrMn3-based heterostructures. We find a significant decrease in the spin-mixing conductance of the chemically-disordered IrMn3/Ni3Fe interface compared to the chemically-ordered counterpart. Independent of the AFM film thickness, we unveil that thermally disordered AFM grains exist in all the samples (measured up to 35-nm-thick IrMn3 films). We develop an iterative magnetic field cooling procedure to systematically manipulate the orientation of the thermally disordered and reversible AFM moments and thus, achieve tunable magnetic, and magnetotransport properties of exchange coupled AFM-based heterostructures. Subsequently, we investigate the impact of fractional variation in the AFM order on the magnetization reversal and magnetotransport properties of the epitaxially textured ɣ-phase IrMn3/Ni3Fe, Ni3Fe/IrMn3/Ni3Fe, and Ni3Fe/IrMn3/Ni3Fe/CoO heterostructures. We probe the element-specific (FM: Ni and Co, and AFM: Mn) magnetization reversal properties of the exchange coupled Ni3Fe/IrMn3/Ni3Fe/Co/CoO heterostructures in various magnetic field cooled states. We present a detailed procedure for separating the spin and orbital moment contributions for magnetic elements using the XMCD sum rule. We address whether Mauri-type domain walls can develop at the (polycrystalline) exchange coupled Ni3Fe/IrMn3/Ni3Fe interfaces. We further study the impact of magnetic field cooling on the AFM Mn (near L2,3-edges) X-ray absorption spectra. Finally, we employ a combination of in-field high-resolution magnetic force microscopy, magnetooptical Kerr effect magnetometry with micro-focused beam, and micromagnetic simulations to study the magnetic vortex structures in exchange coupled FM/AFM and AFM/FM/AFM disk structures. We examine the magnetic vortex annihilation mechanism mediated by the emergence and subsequent annihilation of the vortex-antivortex (V-AV) pairs in simple FM and exchange coupled FM/AFM as well as AFM/FM/AFM disk structures. We image the distorted magnetic vortex structures in exchange coupled FM/AFM disks proposed by Gilbert and coworkers. We further emphasize crucial magnetic vortex properties, such as handedness, effective vortex core radius, core displacement at remanence, nucleation field, annihilation field, and exchange bias field. Our experimental inquiry offers profound insight into the interfacial exchange interaction, magnetization reversal, magnetization dynamics, and interfacial spin transport of the AFM/FM-based heterostructures. Moreover, our results pave the way towards nanoscale control of the magnetic properties in AFM-based heterostructures and point towards future opportunities in the field of AFM spintronic devices.:1. Introduction 2. Magnetic Interactions and Exchange Bias Effect 3. Materials 4. Experimental Methods 5. Structural, Electrical, and Magnetization Reversal Properties of Epitaxially Textured ɣ-IrMn3/ Ni3Fe Heterostructures 6. Magnetization Dynamics of MgO(001)/IrMn3/Ni3Fe Heterostructures in the Frequency Domain 7. Tunable Magnetic and Magnetotransport Properties of MgO(001)/Ni3Fe/IrMn3/Ni3Fe/ CoO/Pt Heterostructures 8. Element-Specific XMCD Study of the Exchange Couple Ni3Fe/IrMn3/Ni3Fe/Co/CoO Heterostructures 9. Distorted Vortex Structure and Magnetic Vortex Reversal Processes in Exchange Coupled Ni3Fe/IrMn3 Disk Structures 10. Conclusions and Outlook Addendum Acronyms Symbols Publication List Author Information Acknowledgments Statement of Authorship