The master’s thesis deals with the theory of thin film technology, especially creating these layers. The work includes the distribution of vacuum deposition techniques for physical (PVD) and chemical (CVD). The main aim is to create a theme in different ways of implementation by using magnetron sputtering device, and these motives evaluated in terms of the quality of sputtering.

This thesis is focused on the description of the method of reactive sputtering of thin films. Currently, there are many ways how to create thin films and there are many applications of thin films in various industrial sectors. In this paper at the first are listed the issue of thin films, followed by an overview of the deposition techniques and of the chemical analysis of deposited thin films. It also describes the four-point measurement method of sheet resistance, mechanical test of adhesion and optical properties. At the end of the theoretical part are described the material composition of the deposited films. The goal of the practical part is to optimize the deposition process of the mixed layer of indium tin oxide (In2O3: SnO2) and contribute to the overall understanding of the influence of annealing on the layer. There were created six series of samples with that applied layers. First, the work focused on examining of the influence of annealing on the throughput in the whole measuring range, and then comparing the series due to the transmittance in the visible light spectrum. Furthermore were compared the value of sheet resistance of unannealed and subsequently annealed samples.

This thesis deals with the analysis of nano-structured layers deposited by high-frequency magnetron sputtering on the monocrystalline silicon surface. The content of the work focuses on the magnetron sputtering application as an alternative method for passivation and antireflection layers deposition of silicon solar cells. The procedure of pre-deposite silicon surface cleaning by plasma etching in the Ar/H2 gas mixture atmosphere is suggested. In the next step the silicon nitride and aluminum nitride layers with hydrogen content in Ar/N2/H2 gas mixture by magnetron sputtering are deposited. One part of the thesis describes an experimental pseudo-carbide films deposition from a silicon target in the atmosphere of acetylene (C2H2). An emphasis is placed on the research of sputtered layers properties and on the conditions on the silicon-layer interface with the help of the standard as well as special measurement methods. Sputtered layers structure is analyzed by modern X-ray spectroscopy (XPS) and by Fourier infrared spectroscopy (FTIR). Optical ellipsometry and spectrophotometry is used for the diagnostic of the layers optical properties depending upon the wavelength of incident light. A special method of determining the surface lay-out of the charge´s carrier life in the volume and on the surface of silicon is employed to investigate the passivating effects of the sputtered layers.