by J.C. Slater. / "April 3, 1947." / Army Signal Corps Contract No. W-36-039 sc-32037

[by] Winston Bostick, Edgar Everhart [and] Melvin Labitt.

Thesis (Ph. D.)--University of Hong Kong, 2008. / Also available in print.

Orientador: José Roberto Ribeiro Bortoleto / Banca: José Humberto da Silva / Banca: Adriana de Oliveira Delgado / O Programa de Pós Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi / Resumo: Filme finos de AZO foram sintetizados sobre substratos de vidro utilizando um alvo de Zn-Al (5% at Al) com 99,999% de pureza através da técnica RF magnetron sputtering reativo a temperatura ambiente. As propriedades estruturais, elétricas, ópticas e morfológicas foram investigadas em função da variação da pressão de argônio no intervalo de 10 a 50 mTorr. As análises de DXR revelaram que os filmes obtidos são policristalinos come estrutura hexagonal wurtzita e orientação preferencial no plano (002). Além disso, mostrou que o aumento da pressão, reduziu os valores tensão e ocasionou o aumento da presença de vazios entre os grãos. Para todos os filmes finos obtidos as medidas de transmitância óptica apresentaram valores acima de 80% na região visível do espectro entre 500-700 nm. Já os valores de gap óptico decresceram de 3,68 para 3,55 eV com o aumento da pressão. O filme sintetizado a 10 mTorr apresentou os melhores resultados em termos de densidade de portadores e mobilidade elétrica, sendo os valores 2,68 x 10 cm-3/Vs, respectivamente / Abstract: Aluminum zinc oxide (AZO) thin films were synthesized on glass substrates by radiofrequency (RF) magnetron sputtering of a Zn-Al (5at% Al) target of 99.999% purity at ambient temperature. The structural, electrical, optical and morphological properties of the films were investigated as a function of the argon pressure, which was varied from 10 to 50 mTorr. X-ray diffraction (XRD) analyses revealed that the films obtained are polycrystalline with a hexagonal wurtzite structure with a preferential orientation in the (002) plane. In addition, it was show than an increase in pressure reduced the tension and produced an increase in the inter-grain spaces. For all of the films produced optical transmission was above 80% in the visible region (wavelength between 500 nm and 700 nm). As the system pressure was increased the optical gap fell from 3.68 to 3.55 eV. The film synthesized at 10 mTorr presented the best results in terms of the carrier density and electrical mobility, which were 2.68 x 10 cm-3 and 3.0 cm2/Vs, respectively / Mestre

Made available in DSpace on 2015-03-03T11:52:23Z (GMT). No. of bitstreams: 0 Previous issue date: 2014-07-16Bitstream added on 2015-03-03T12:07:24Z : No. of bitstreams: 1 000806683.pdf: 1193891 bytes, checksum: 1226deee936f356b44515bf10a7e5739 (MD5) / Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / Filme finos de AZO foram sintetizados sobre substratos de vidro utilizando um alvo de Zn-Al (5% at Al) com 99,999% de pureza através da técnica RF magnetron sputtering reativo a temperatura ambiente. As propriedades estruturais, elétricas, ópticas e morfológicas foram investigadas em função da variação da pressão de argônio no intervalo de 10 a 50 mTorr. As análises de DXR revelaram que os filmes obtidos são policristalinos come estrutura hexagonal wurtzita e orientação preferencial no plano (002). Além disso, mostrou que o aumento da pressão, reduziu os valores tensão e ocasionou o aumento da presença de vazios entre os grãos. Para todos os filmes finos obtidos as medidas de transmitância óptica apresentaram valores acima de 80% na região visível do espectro entre 500-700 nm. Já os valores de gap óptico decresceram de 3,68 para 3,55 eV com o aumento da pressão. O filme sintetizado a 10 mTorr apresentou os melhores resultados em termos de densidade de portadores e mobilidade elétrica, sendo os valores 2,68 x 10 cm-3/Vs, respectivamente / Aluminum zinc oxide (AZO) thin films were synthesized on glass substrates by radiofrequency (RF) magnetron sputtering of a Zn-Al (5at% Al) target of 99.999% purity at ambient temperature. The structural, electrical, optical and morphological properties of the films were investigated as a function of the argon pressure, which was varied from 10 to 50 mTorr. X-ray diffraction (XRD) analyses revealed that the films obtained are polycrystalline with a hexagonal wurtzite structure with a preferential orientation in the (002) plane. In addition, it was show than an increase in pressure reduced the tension and produced an increase in the inter-grain spaces. For all of the films produced optical transmission was above 80% in the visible region (wavelength between 500 nm and 700 nm). As the system pressure was increased the optical gap fell from 3.68 to 3.55 eV. The film synthesized at 10 mTorr presented the best results in terms of the carrier density and electrical mobility, which were 2.68 x 10 cm-3 and 3.0 cm2/Vs, respectively

No description available.

Si3N4 thin films were prepared by RF magnetron sputtering using N2 or Ar as the sputtering gas. The films were amorphous, with the deposition rate for Ar-sputtered films increasing with RF power and Ar pressure. Sandwich samples having both Al and Au electrodes were prepared. Capacitancevoltage measurements indicated that the contacts for Nj-sputtcred samples were ohmic, while Ar-sputtered samples with Al electrodes exhibited depletion regions. Values of the relative permittivity of 6.3 (AI electrodes) and 6.8 (Au electrodes) were determined from geometric capacitance variations in Ny-sputrered films. Current density-voltage characteristics normally showed ohmic and space charge limited conductivity with trap levels distributed exponentially within the insulator band gap, but exceptionally in N2-sputtered films with Au electrodes electroforming behaviour was observed, with Poole-Frenkel conductivity in the preformed region. Hopping was dominant at low temperatures. AC conductivity was higher for Ar-sputtering, and with Au electrodes. These effects were related to the possible structure of the films, and the diffusion of Au. AC conductivity increased with increasing frequency and temperature, appearing to be via a free band process at high temperatures and hopping at low temperatures. Plausible values of the density of localised states were deri ved using Elliott's model, but this could not be considered uni versally applicable. Loss tangent was also frequency and temperature dependent in Ny-sputtered films, showing a minimum value which shifted towards higher frequencies with increasing temperature. In Ar-sputtered samples minima were not observed in the frequency range covered. The model of Goswami and Goswami appears consistent with these results, particularly in the former case. Variations in the loss tangent values with the sputtering gas and electrode species were consistent with the observed conducti vity variations. Optical properties were also investigated. In Ar-sputtered films, the optical band-gap appeared narrower and the optical absorption higher than for Ny-sputtered films, and a direct transition was also identified. Values of the electrical properties determined for such sputtered films are comparable to those prepared using more sophisticated methods, particularly in the case of Nj-sputtered films. Sputtering may therefore prove useful in semiconductor processing, where a relatively inexpensive method of deposition is required.

No description available.

R.R. Moats. / "This report is essentially the same as a doctoral thesis in the Department of Electrical Engineering, M.I.T." "June 25, 1951." / Bibliography: p. 53-54. / Army Signal Corps Contract No. DA36-039 sc-100 Project No. 8-102B-0." Dept. of the Army Project No. 3-99-10-022.

Thesis (MScEng)--University of Stellenbosch, 2002. / ENGLISH ABSTRACT: In the past few years, a need for consulting on microwave heating has surfaced. Since most specialised microwave components are imported, this adds a hefty price tag in developing the infrastructure for such consultation. This thesis looks at the design oflow cost alternatives for use in the laboratory. A microwave source output with variable output power is often required for consultation. The calculation of product costs may also be simplified if the available microwave power is constant despite load changes. The magnetron as a load was first investigated and a high voltage SMPS was then designed to control the output of the magnetron according to operator / consulting requirements. To ensure adequate feedback of system output and load matching, a dual directional coupler has been designed and implemented. Since the amount of microwave power required has a direct impact on the initial capital expenditure, costs need to be kept low by optimising the system. An impedance matching unit was designed to match the magnetron with the load, saving energy and reducing system costs. Through automation, the system will strive for the optimum load condition without operator intervention. / AFRIKAANSE OPSOMMING: Die afgelope paar jaar het 'n behoefte ontstaan aan konsultasiewerk op die gebied van mikrogolfverhitting. Aangesien gespesialiseerde komponente meestal ingevoer word, bemoeilik die koste daarvan die ontwikkeling van die nodige infrastruktuur vir konsultasie. Hierdie tesis kyk na die ontwerp van goedkoper alternatiewe vir laboratoriumgebruik. 'n Mikrogolf bron met 'n verstelbare kraglewering is dikwels nodig tydens konsultasiewerk. Produk kosteberekinge kan ook vereenvoudig word indien die mikrogolf kraglewering konstant bly, ongeag produk veranderinge. Die magnetron as GS las is eers ondersoek waarna 'n hoogspanning geskakeldekragbron ontwerp is om die uittree van die magnetron te verstel volgens operateur- / konsultasievereistes. 'n Dubbele direksionele koppelaar is ontwerp en by die laboratorium opstelling gevoeg om voldoende terugvoer van die kraglewering en impedansie aanpassing te verseker. Die hoeveelheid mikrogolf drywing wat benodig word, het 'n direkte impak op die aanvanklike kapitale uitgawe vir die stelsel. 'n Optimale stelsel is dus noodsaaklik om kostes te bespaar. 'n Impedansie-aanpassingsnetwerk is ontwerp om die magnetron en las by mekaar aan te pas om sodoende energie en kostes te bespaar. Deur outomatisering streef die stelsel na optimale werkverrigting sonder enige ingryping deur die operateur.