This thesis details the design and development of a solid-state, high power modulator for driving plasma ion implantation systems. A plurality of modulators can be stacked in a Marx geometry to allow complete voltage (implantation energy) scalability. Unlike a classic Marx modulator, the design employs actively controlled charging and discharging paths. This allows maximum modulation flexibility and efficiency. A hybrid Marx bank - pulse transformer configuration was commissioned in a 20keV 12A plasma ion implantation system for the purpose of photonics research. <p>The design portion of this work is accompanied by an investigation, extension and discretization of the Lieberman analytical model of plasma ion implantation dynamics. The model predicts final implantation concentrations as well as system operational limits in specific plasma conditions. A new extension to the model accounts for subtle time-of-flight effects on accelerating ions. Agreement between modeled and measured ion currents is good.<p>Finally, a collection of material processing experiments conducted with the plasma ion implantation system since its inauguration in February 2006 is briefly presented. In it, a new silicon-based light emitting diode is introduced.

This thesis details the design and development of a solid-state, high power modulator for driving plasma ion implantation systems. A plurality of modulators can be stacked in a Marx geometry to allow complete voltage (implantation energy) scalability. Unlike a classic Marx modulator, the design employs actively controlled charging and discharging paths. This allows maximum modulation flexibility and efficiency. A hybrid Marx bank - pulse transformer configuration was commissioned in a 20keV 12A plasma ion implantation system for the purpose of photonics research. <p>The design portion of this work is accompanied by an investigation, extension and discretization of the Lieberman analytical model of plasma ion implantation dynamics. The model predicts final implantation concentrations as well as system operational limits in specific plasma conditions. A new extension to the model accounts for subtle time-of-flight effects on accelerating ions. Agreement between modeled and measured ion currents is good.<p>Finally, a collection of material processing experiments conducted with the plasma ion implantation system since its inauguration in February 2006 is briefly presented. In it, a new silicon-based light emitting diode is introduced.