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Electrochemical Deposition of Bismuth Telluride and Antimony Telluride Thin Films for Micro TE-cooler ApplicationsLi, Ming-chan 13 July 2006 (has links)
¡@¡@¡@¡@¡@¡@¡@¡@¡@¡@¡@¡@¡@Abstract
This paper presents an integrated batch-produced (Bi, Sb)2Te3 micro thermoelectric cooler(£g-TEC) fabricated by electrochemical MEMS technology. To optimize the thermal conductivity of (Bi, Sb)2Te3 thin layers, a cathode with tunable rotary speed has been designed in the electroplating system to well control the thin film deposition rate and uniformity.The column-type micro thermoelectric thin films fabricated using electrochemical-deposited and patterned using photolithography processes. The thermoelectric thin films made of N-type Bi2Te3 and P-type Sb2Te3 with an average thickness of 5£gm, are connected using Cr/Au layers at the hot junctions and cold junctions. The measured Seebeck coefficient and electrical resistivity of the thermoelectric thin films,are -52£gV/K and 2.52¡Ñ10-5£[m(N-type, power factor of 0.11mW/K2m),and 71£gV/K and 1.91¡Ñ10-5£[m( P-type, power factor of 0.26mW/K2m) after annealing at 250¢J.Under the circumstances that voltage of 2-5 volts is driven, the upper and lower levels electrode shows tentatively that there is 0.7¢Jof difference in temperature.
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