The objective of this research is to design, fabricate, and demonstrate a microfabricated monolithic ion trap for applications in quantum computation and quantum simulation. Most current microfabricated ion trap designs are based on planar-segmented surface electrodes. Although promising scalability to trap arrays containing ten to one hundred ions, these planar designs suffer from the challenges of shallow trap depths, radial asymmetry of the confining potential, and electrode charging resulting from laser interactions with dielectric surfaces. In this research, the design, fabrication, and testing of a monolithic and symmetric two-level ion trap is presented. This ion trap overcomes the challenges of surface-electrode ion traps. Numerical electrostatic simulations show that this symmetric trap produces a deep (1 eV for 171Yb+ ion), radially symmetric RF confinement potential. The trap has an angled through-chip slot that allows back-side ion loading and generous through laser access, while avoiding surface-light scattering and dielectric charging that can corrupt the design control electrode compensating potentials. The geometry of the trap and its dimensions are optimized for trapping long and linear ion chains with equal spacing for use with quantum simulation problems and quantum computation architectures.