A new method to display low contrast OBIC images has been used to highlight defects in semiconductor devices. In addition an exciting novel method to obtain spatial information on the distribution of defects at the silicon/silicon-dioxide interface in metal oxide semiconductor devices has been found. This method can examine many defects which cause serious problems for device manufacturers including the effect of radiation damage on device performance. Other non-destructive techniques which can complement OBIC imaging are explored including photoluminescence and infrared transmission imaging. Additional research is proposed for the future. This research in conjunction with the research in this thesis would allow a comprehensive and powerful examination approach of both static and dynamic conditions of semiconductor devices.