The microstructure and electrochemical behavior of boron doped and undoped ultra thin diamond film electrodes have been studied in this work. The ultra thin diamond films are deposited on porous silicon (PSi) by microwave plasma chemical vapor deposition (MPCVD). In order to enlarge the surface area of diamond electrodes, the deposition of nano structured diamond thin films is performed only in a short time deposition under a negative bias, so that diamond nuclei grew from the tips of PSi nano structures and the thin film surface remained rough and nano fine structured. Diamond thin films were analyzed by Raman spectroscopy and SEM, and then fabricated to the electrode device. From SEM analysis, the morphology of diamond thin films on PSi reveals in the shape of nano rods diamond crystallites. The electro-chemical response was evaluated by performing cyclic voltammetry in the inorganic K4[Fe(CN)6] and a K2HPO4 buffer solution. Boron doped diamond thin film on porous silicon has demonstrated a high redoxidation current of cyclic voltammetry, which may be due to the rough surface providing more electrochemical surface area and more sp2 conducting bonds exposed on the surface.

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