The thesis consists of two aspects: (1) Research on regrowth by molecular beam epitaxy, and (2) Silicon monoxide coating. In part one, we used (NH4)2Sx to passivate the InAlGaAs/InP surface. From the X-ray photoelectron spectroscopy (XPS), the passivated surface shows a dramatic reduce of oxidation. A preparation chamber for the regrowth has been setup to proceed the sulfur passivation method. We can obtain a clean surface for regrowth after heating and putting samples in the high vacuum chamber. In the design of regrowth layers, we have found the best waveguide structure by regrowth. When the ridge width is 2.5 mm with etching depth 1.4 mm, a circular mode profile can be obtained by Fimmwave simulation. In the integration between devices, we have designed the best waveguide structure after regrowth by BeamProp 3D. The best design will make the propagation loss smaller than 0.21%. The second part is anti-reflection (AR) coating by silicon monoxide (SiO) deposition. The SiO refractive index of 1.8837 was obtained by transmission, and ellipsometer measurements. The corresponding AR coating thickness for InP substrate is 2057 &#x00C5;. In order to make AR coating on lasers of different effective index, we design the double-layer coating. For Beam Expander Semiconductor Optical Amplifier (BESOA), SiO2 / SiO and Si3NX / SiO double-layer coatings were compared with SiO single layer. The reflectance (R) was reduced 16.86 % and 25.12 %, respectively, and the R < 1% bandwidth extends 200 &#x00C5;.