Spelling suggestions: "subject:"monolithical kontextintegration"" "subject:"monolithical migrantintegration""
1 |
Development of Monolithically Integrated Photonic Devices Through Simulation and CharacterizationD'Abreo, Roger 14 July 2009 (has links)
Simulations were carried out to determine the optical properties of 2 different layer structures which have been used in quantum well intermixed devices. The supported modes,
effective refractive indices and optimal device dimensions prior to intermixing were reported. 1.5 micrometer ridge waveguides with 600 micrometer bend radii are shown to be suitable for minimizing loss. A first approximation to the intermixed structures were also simulated.
An Asymmetric Mach-Zehnder Interferometer (AMZI) fabricated using a sputtered
SiO2 Quantum Well Intermixing (QWI) process was also characterized. A 100 GHz
channel spacing with an extinction ratio up to 16 dB was observed. Tuning of the device
was achieved using current injection. A 0.45 nm tuning range was achieved at 15 mA of
injected current.
The design of a monolithically integrated all optical binary half-adder is also presented, with physical dimensions based on the results of the previous simulations.
|
2 |
Development of Monolithically Integrated Photonic Devices Through Simulation and CharacterizationD'Abreo, Roger 14 July 2009 (has links)
Simulations were carried out to determine the optical properties of 2 different layer structures which have been used in quantum well intermixed devices. The supported modes,
effective refractive indices and optimal device dimensions prior to intermixing were reported. 1.5 micrometer ridge waveguides with 600 micrometer bend radii are shown to be suitable for minimizing loss. A first approximation to the intermixed structures were also simulated.
An Asymmetric Mach-Zehnder Interferometer (AMZI) fabricated using a sputtered
SiO2 Quantum Well Intermixing (QWI) process was also characterized. A 100 GHz
channel spacing with an extinction ratio up to 16 dB was observed. Tuning of the device
was achieved using current injection. A 0.45 nm tuning range was achieved at 15 mA of
injected current.
The design of a monolithically integrated all optical binary half-adder is also presented, with physical dimensions based on the results of the previous simulations.
|
Page generated in 0.0981 seconds