In this thesis, we investigate strongly correlated phenomena in quantum spin systems. In the first part of this work, we study geometrically frustrated antiferromagnets (AFMs). Generalizing the SU(2) Heisenberg Hamiltonian to Sp(N) symmetry, we obtain, in the large-N limit, the mean-field phase diagrams for the planar pyrochlore and cubic AFMs. We then use gauge theories to consider fluctuation effects about their respective mean-field configurations. We find, in addition to conventional Neel states, a plethora of novel magnetically disordered phases: two kinds of spin liquids, Z2 in 2+1D and U(1)in 3+1D, and several valence bond solids such as two and three-dimensional plaquette and columnar singlet states. We use the same approach to study the diamond lattice AFM which possesses extended classical ground state degeneracy. We demonstrate that quantum and entropic fluctuations lift this degeneracy in different ways. In the second part of the thesis, we study ultracold spinor atoms confined in optical lattices. We first demonstrate the feasibility of experimental realization of rotor models using ultracold spin-one Bose atoms in a spin-dependent and disordered optical lattice. We show that the ground state of such disordered rotor models with quadrupolar interactions can exhibit biaxial nematic ordering in the disorder-averaged sense, and suggest an imaging experiment to detect the biaxial nematicity in such systems. Finally, using variational wavefunction methods, we study the Mott phases and superfluid-insulator transition of spin-three bosons in an optical lattice with an anisotropic two dimensional optical trap. We chart out the phase diagrams for Mott states with n = 1 and n = 2 atoms per lattice site. We show that the long-range dipolar interaction stabilizes a state characterized by antiferromagnetic chains made of ferromagnetically aligned spins. We also obtain the mean-field phase boundary for the superfluid-insulator transition, and show that inside the superfluid phase and near the superfluid-insulator phase boundary, the system undergoes a first order antiferromagnetic-ferromagnetic spin ordering transition.

Ce travail a pour but l'étude de la transition de Mott dans le silicium dopé au phosphore (ou à l'arsenic) au moyen de la double résonance électron-noyau et de la résonance nucléaire du Si29.

Le microscope à effet tunnel (STM) permet une analyse spatiale et spectroscopique de surfaces à l'échelle atomique. Mise en évidence peu après l'invention du STM, la lumière émise par la jonction tunnel contient des informations pertinentes sur les propriétés électroniques et optiques de surfaces ou de nano-objets.<br /><br />La thématique dans laquelle s'inscrit cette thèse est la luminescence induite par STM sur substrat semiconducteur à large bande interdite. Les travaux ont porté sur la reconstruction de surface SiC(0001)3x3 du carbure de silicium (SiC) et s'articulent autour de trois parties.<br /><br />La première partie est consacrée à l'étude de la luminescence de la jonction tunnel métal/vide/SiC(0001)3x3. Cette étude, en parallèle à des mesures de spectroscopie tunnel, a mis en évidence les mécanismes et propriétés de transport électronique le long des états de surface du SiC.<br /><br />Une deuxième partie est dédiée à l'adsorption de molécules organiques sur la surface SiC(0001)3x3. La fonctionnalisation organique du SiC est une étape indispensable pour l'étude de molécules individuelles mais aussi pour la conception de matériaux hybrides organique/inorganique. La résolution submoléculaire du STM associée à des calculs ab initio en collaboration ont dégagé un modèle de chimisorption détaillé de la phthalocyanine hydrogénée.<br /><br />La dernière partie décrit des simulations numériques, basées sur le formalisme des tenseurs de Green, de la lumière émise par la jonction tunnel. Ces travaux ont permis de modéliser d'une part l'influence de la forme de la pointe du STM sur le spectre de la lumière émise, d'autre part l'inhibition de la fluorescence de molécules individuelles excitées par STM.

Mn5Ge3 suscite de l'intérêt pour des applications dans le domaine de l'électronique de spin car il a une température de Curie élevée (≈300 K) et il peut croître épitaxialement sur des substrats Ge(111) permettant ainsi d'injecter directement dans le semi-conducteur Ge un courant polarisé en spin.Nous avons étudié par photoémission résolue en angle et en spin (ARPES, SARPES), utilisant le rayonnement synchrotron, des films minces de Mn5Ge3(001), obtenus par croissance sur la surface reconstruites Ge(111)-c(2x8).Les résultats ARPES, obtenus dans les plans GALM et GAHK, sont en accord avec des simulations faites sur la base de calculs de structure de bandes faisant appel à la théorie de la fonctionnelle de la densité.Les mesures SARPES faites en plusieurs points du plan GALM sont aussi bien reproduites par ces simulations.D'une façon globale, nos résultats apportent une validation remarquable de la description des propriétés électroniques de Mn5Ge3 par le modèle de bandes. Seule l'intensité spectrale au niveau de Fermi n'est pas bien expliquée par la simulation. Cette différence est attribuée à la nature tridimensionnelle de l'échantillon et à des effets de corrélation.

Les sujets abordés ici sont relativement variés: systèmes de fermions corrélés, structures mésoscopiques et magnétisme quantique. Un cadre global d'étude est cependant fournit par la théorie de champ moyen dynamique (DMFT), dont nous avons tout d'abord vérifié les prédictions en relation avec des expériences récentes: transport de charge dans kappa-BEDT et photoémission sur TaSe2. Pour pallier à la grande complexité des approches théoriques usuelles, nous avons développé une technique de rotateur esclave qui a été appliquée avec succés à diverses questions liées à la transition de Mott (effets orbitaux, fluctuations magnétiques, écrantage), ainsi qu'à l'étude de nanostructures, permettant d'unifier les phénomènes antagonistes de blocage de Coulomb et de transport cohérent dû à l'effet Kondo. Finalement, on propose une extension de l'approche DMFT au problème du point critique quantique dans les fermions lourds et à la question du comportement liquide de spin sur le réseau Kagomé.

This study analyzed representative works of John Mott and Bill Bright using Ernest Bormann's method of fantasy theme analysis. The analysis confirmed that Mott and Bright, as leaders of two organizations that encourage college students to engage in evangelism, share an identical rhetorical vision. This vision can be labeled the Great Commission and is identical in thought and content to the words of Christ found in Matthew 28. The shared rhetorical vision encourages members of the rhetorical community to acknowledge the needs of the world and seek to meet those needs by sharing the gospel message of Christ.In addition to a shared rhetorical visions, the works considered in this study also share identical fantasy types: "Fetching Good Out of Evil," and the quest. The fantasy type of the quest has received little interest in other studies. This study suggests that the type might provide rhetorical critics with a useful form for future studies. Several fantasy themes also were found to exist within each artifact. The presence of shared fantasy types and the commonalties that exist between the fantasy themes verifies the presence of the shared rhetorical vision, the Great Commission. / Department of Speech Communication

We discuss the appearance of quantum orders in the Hubbard model for interacting electrons, at half-filling. Such phases do not have local order parameters and need to be characterized by the quantum mechanical properties of their ground state. On one hand, we study the Mott transition from a metal to a spin liquid insulator in two dimensions, of potential relevance to some layered organic compounds. The correlation-driven transition occurs at fixed filling and involves fractionalization of the electron: upon entering the insulator, a Fermi surface of neutral spinons coupled to an internal gauge field emerges. We focus on the transport properties near the quantum critical point and find that the emergent gauge fluctuations play a key role in determining the universal scaling. Second, motivated by a class of three-dimensional transition metal oxides, the pyrochlore iridates, we study the interplay of non-trivial band topology and correlations. Building on the strong spin orbit coupling in these compounds, we construct a general microscopic Hubbard model and determine its mean-field phase diagram, which contains topological insulators, Weyl semimetals, axion insulators and various antiferromagnets. We also discuss the effects many-body correlations on theses phases. We close by examining a fractionalized topological insulator that combines the two main themes of the thesis: fractionalization and non-trivial band topology. Specifically, we study how the two-dimensional protected surface states of a topological Mott insulator interact with a three-dimensional emergent gauge field. Various correlation effects on observables are identified.

We discuss the appearance of quantum orders in the Hubbard model for interacting electrons, at half-filling. Such phases do not have local order parameters and need to be characterized by the quantum mechanical properties of their ground state. On one hand, we study the Mott transition from a metal to a spin liquid insulator in two dimensions, of potential relevance to some layered organic compounds. The correlation-driven transition occurs at fixed filling and involves fractionalization of the electron: upon entering the insulator, a Fermi surface of neutral spinons coupled to an internal gauge field emerges. We focus on the transport properties near the quantum critical point and find that the emergent gauge fluctuations play a key role in determining the universal scaling. Second, motivated by a class of three-dimensional transition metal oxides, the pyrochlore iridates, we study the interplay of non-trivial band topology and correlations. Building on the strong spin orbit coupling in these compounds, we construct a general microscopic Hubbard model and determine its mean-field phase diagram, which contains topological insulators, Weyl semimetals, axion insulators and various antiferromagnets. We also discuss the effects many-body correlations on theses phases. We close by examining a fractionalized topological insulator that combines the two main themes of the thesis: fractionalization and non-trivial band topology. Specifically, we study how the two-dimensional protected surface states of a topological Mott insulator interact with a three-dimensional emergent gauge field. Various correlation effects on observables are identified.

Submitted by Simone Souza (simonecgsouza@hotmail.com) on 2018-04-20T14:10:44Z No. of bitstreams: 1 DISS_2014_Raffael Chaves Juliano.pdf: 3302347 bytes, checksum: 174e8e990733d7d4d8b7abe09ac51a92 (MD5) / Approved for entry into archive by Jordan (jordanbiblio@gmail.com) on 2018-05-14T16:24:18Z (GMT) No. of bitstreams: 1 DISS_2014_Raffael Chaves Juliano.pdf: 3302347 bytes, checksum: 174e8e990733d7d4d8b7abe09ac51a92 (MD5) / Made available in DSpace on 2018-05-14T16:24:18Z (GMT). No. of bitstreams: 1 DISS_2014_Raffael Chaves Juliano.pdf: 3302347 bytes, checksum: 174e8e990733d7d4d8b7abe09ac51a92 (MD5) Previous issue date: 2014-11-28 / CAPES / Compostos de metais de transição, como o dióxido de vanadio (VO2), podem apresentar,em determinadas condições, a transição metal-isolante. No VO2, essa transição é acompanhada por uma transformação na sua estrutura cristalina, através da dimerização de átomos de vanadio presentes em sítios distintos. é dessa ligação entre dois sítios que emerge a ideia do dímero de Mott. Neste trabalho, utilizando o método da diagonalização exata, estudamos o modelo de Hubbard em sua versão estendida aplicado ao dimero de Mott, encontrando os seus autovalores e autovetores de energia. Variando os parâmetros do modelo, obtemos os resultados numéricos para os autovalores de energia do sistema. Realizamos ainda uma análise da ocupação eletrônica total e da compressibilidade de carga (densidade de estados) como função do potencial químico. No sentido de compreender melhor o sistema, estudamos o comportamento da dupla ocupação, da energia interna e do calor especifico como função da temperatura, da interação Colombiana local e não local. Além disso, diversas quantidades físicas (dupla ocupação, energia interna,calor especifico, entropia, magnetização e susceptibilidade magnética) do dímero de Mott foram calculadas analiticamente utilizando o método do ensemble canônico. / Compounds based on transition metals such as vanadium dioxide (VO2), present under certain conditions metal-insulator transitions. Regarding to VO2, this transition is accompanied by a change in its cristalline structure through dimerization of two vanadium atoms on di erent sites. Here, it is this bound state between two vanadium atoms that emerges the idea of a Mott's dimer. In this work, using exact diagonalization, we study the Hubbard model in its extended version exploring the physics of Mott's dimer. We obtain explicitly all eigenvalues and eigenvectors of this model. Varying the model parameters, we explore the energy dependence of all eigenvalues of the system. We also performed an analysis of the total electron occupation and the charge compressibility (density of states) as a function of chemical potential. In order to better understand the physical properties of a two-site Hubbard model, we study the behavior of the double occupancy, the total energy and the speci c heat as a function of temperature and the Coulomb interaction parameters. Moreover, various physical quantities (double occupancy, internal energy, speci c heat, entropy, magnetization and magnetic susceptibility) of dimer's Mott were calculated analytically using the method of the canonical ensemble.

Resumen (Castellano) El aumento del consumo de energía global junto con las preocupaciones ambientales ha generado mucho interés por las fuentes de energía alternativas y limpias, como la energía solar fotovoltaica. Los investigadores en la comunidad fotovoltaica han estado buscando formas de reducir costos mientras mantienen o aumentan las eficiencias. Una mejor comprensión de los materiales implicados es esencial para el rápido desarrollo de nuevas tecnologías. Las películas delgadas I-III-VI2 ofrecen sistemas prometedores para lograr células solares de alta eficiencia a un costo menor. De hecho, al adaptar la composición de los compuestos, es posible cambiar la banda prohibida del material para captar la luz solar de manera más eficiente. Esta tesis se centra en la preparación y caracterización del material de la capa absorbente, especialmente las películas delgadas nanocristalinas y la consideración de las características estructurales y eléctricas de dicha capa principal absorbente de células. La tesis examina cómo las diferentes técnicas de preparación y uso del material podrían afectar las propiedades del películas delgadas sintetizadas. Películas delgadas CuInSe2 y CuInS2 se depositaron sobre sustratos de vidrio ITO usando la técnica de electrodeposición en solución acuosa. Las películas electrodepositadas se caracterizaron por difracción de rayos X (XRD), microscopía electrónica de barrido (SEM) y análisis de rayos X de energía dispersiva (EDS). Se investigaron los efectos de recocido sobre los precursores electrodepositados. La estructura de calcopirita de CuInSe2/CuInS2 mostró una mejora de la cristalinidad después del tratamiento posterior de selenización/sulfurización en atmósfera Se/S, respectivamente. Los estudios de XRD y SEM revelaron una mejora de la calidad cristalina de las películas de CIS después de los tratamientos térmicos. Las propiedades ópticas de las películas delgadas recocidas CuInSe2-Se y CuInSe2-S se han estudiado para determinar el efecto del proceso de recocido en diferentes ambientes de selenio y azufre. Además, modificamos el CuInxCryGa1-x-ySe2 de cobre indio, donde x = 0.4, y = (0.0, 0.1, 0.2, 0.3) la capa de superestrato por el proceso de recubrimiento por centrifugado. CuInxCryGa1-xySe2 donde x = 0.4, y = (0.0, 0.1, 0.2, 0.3) nanopartículas han sido sintetizadas en primer lugar usando un método hidrotermal químico húmedo que se basa en un proceso térmico sin vacío sin ningún proceso de selenización adicional. Introduciendo diferentes fuentes de metal en un autoclave con etilenamina como solvente, se obtuvieron nanopartículas de CIGS a diferentes temperaturas en un rango de 190-230 °C. Los resultados de la difracción de rayos X (XRD) confirmaron la formación de una estructura de calcopirita CuInxCryGa1-x-ySe2 tetragonal. Finalmente, se estudió el efecto de la temperatura de recocido en los materiales tipo Kesterita (como el Cu2ZnSnS4) que son materiales de muy bajo costo y que no dañan el medio ambiente. Estudiamos el crecimiento de las películas delgadas cuaternarias Cu2ZnSnS4 (CZTS) de kesterita mediante un depósito electroquímico de un solo paso seguido de un recocido a baja temperatura. La influencia de diferentes atmósferas de recocido a tiempos de recocido constantes (t = 45 min) y parámetros de control de preparación fijos; es decir, concentración de la solución de materiales de partida (sales de metales precursores), tiempo de deposición y potencial de electrodeposición. Se estudiaron las propiedades estructurales, de composición, morfológicas y ópticas, así como las propiedades fotoelectroquímicas. / Abstract Increasing global energy consumption together with environmental concerns has led to much interest in alternative, cleaner sources of energy such as solar photovoltaic. Researchers in the solar cell community have been looking for ways to reduce costs while maintaining or increasing already high efficiencies. A fundamental understanding of the materials under consideration is essential to rapid development of new technologies. The I-III-VI2 thin films offer promising systems for achieving high efficiency solar cells at lower costs. In fact, by tailoring the chemistry of the compounds it is possible to change the bandgap of the material in order to collect sunlight more efficiently. First of all, this thesis focuses on absorber layer material preparation and characterization, especially nanocrystalline thin films and consideration of both structural and electrical characteristics of such main cell absorber layer.The thesis examines how different preparation techniques and material usage could affect the properties of the synthesized thin films (absorber layer). In this study CuInSe2 and CuInS2 thin films were deposited onto ITO glass substrate using the electrodeposition technique in aqueous solution. The electrodeposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDS). The annealing effects on the electrodeposited precursors were investigated. The chalcopyrite structure of CuInSe2/CuInS2 showed an enhancement of crystallinity after subsequent selenization/sulfurization treatment in Se/S atmosphere, respectively. XRD and SEM studies revealed a dramatic improvement of the crystalline quality of CIS films after annealing treatments. The optical properties of annealed CuInSe2-Se and CuInSe2-S thin films have been studied in order to determine the effect of annealing process in different selenium and sulfur atmosphere. In the second step we modified copper indium CuInxCryGa1-x-ySe2 where x=0.4, y= (0.0, 0.1, 0.2, 0.3)superstrate layer by spin coating process. CuInxCryGa1-x-ySe2 where x=0.4, y= (0.0, 0.1, 0.2, 0.3) nanoparticles have been synthesized firstly using a wet chemical hydrothermal method that is based on a non-vacuum thermal process without any additional selenization process. Introducing different metal sources in an autoclave with ethylenediamine as solvent, CIGS nanoparticles were obtained at different temperatures range 190-230°C. The X-ray diffraction (XRD) results confirmed the formation of a tetragonal CuInxCryGa1-x-ySe2 chalcopyrite structure. Finally, we turned again to the study of the annealing temperature effect onKesterite materials but this time in those of very low-cost materials and environmentally friendly Cu2ZnSnS4. We studied the growth of quaternary Cu2ZnSnS4 (CZTS) kesterite thin films by a single step electrochemical deposition followed by annealing at low temperature. The influence of different annealing atmospheres at constant annealing times (t = 45 min) and fixed preparation controlling parameters; i.e., starting materials (precursor metal salts) solution concentration, time of deposition and electrodeposition potential. Structural, compositional, morphological, and optical properties, as well as photoelectrochemical properties were studied. / Resum (Valencià) L'augment del consum d'energia global juntament amb les preocupacions ambientals ha generat molt d'interès per les fonts d'energia alternatives i netes, com ara l'energia solar fotovoltaica. Els investigadors de la comunitat fotovoltaica han estat buscant formes de reduir costos mentre mantenen o augmenten les eficiències. Una millor comprensió dels materials implicats és essencial per al ràpid desenvolupament de noves tecnologies. Les pel·lícules primes I-III-VI2 ofereixen sistemes prometedors per aconseguir cèl·lules solars d'alta eficiència a un cost menor. De fet, en adaptar la composició dels compostos, és possible canviar la banda prohibida del material per captar la llum solar de manera més eficient. Aquesta tesi se centra en la preparació i caracterització del material de la capa absorbent, especialment les pel·lícules primes nanocristal·lines i la consideració de les característiques estructurals i elèctriques d'aquesta capa principal absorbent de cèl·lules. La tesi examina com les diferents tècniques de preparació i ús del material podrien afectar les propietats del pel·lícules primes sintetitzades. Pel·lícules primes CuInSe2 i CuInS2 es van dipositar sobre substrats de vidre ITO usant la tècnica d'electrodeposició en solució aquosa. Les pel·lícules electrodepositadas es van caracteritzar per difracció de raigs X (XRD), microscòpia electrònica de rastreig (SEM) i anàlisi de raigs X d'energia dispersiva (EDS). Es van investigar els efectes de recuit sobre els precursors electrodepositados. L'estructura de calcopirita de CuInSe2/CuInS2 va mostrar una millora de la cristal·linitat després del tractament posterior de selenització/sulfurització en atmosfera de Se o S, respectivament. Els estudis de XRD i SEM van revelar una millora de la qualitat cristal·lina de les pel·lícules de CIS després dels tractaments tèrmics. Les propietats òptiques de les pel·lícules primes recuites CuInSe2-Es i CuInSe2-S s'han estudiat per determinar l'efecte del procés de recuit en diferents ambients de seleni i sofre. A més, modifiquem el CuInxCryGa1-x-ySe2 de coure indi, on x = 0.4, i = (0.0, 0.1, 0.2, 0.3) la capa d'superstrat pel procés de recobriment per centrifugat. CuInxCryGa1-x-ySe2 on x = 0.4, i = (0.0, 0.1, 0.2, 0.3) nanopartícules han estat sintetitzades en primer lloc fent servir un mètode hidrotermal químic humit que es basa en un procés tèrmic sense buit sense cap procés de selenización addicional. Introduint diferents fonts de metall en un autoclau amb etilenamina com solvent, es van obtenir nanopartícules de CIGS a diferents temperatures en un rang de 190- 230 °C. Els resultats de la difracció de raigs X (XRD) van confirmar la formació d'una estructura de calcopirita CuInxCryGa1-x-ySe2 tetragonal. Finalment, es va estudiar l'efecte de la temperatura de recuit en els materials tipus kesterita (com el Cu2ZnSnS4) que són materials de molt baix cost i que no danyen el medi ambient. Vam estudiar el creixement de les pel·lícules primes quaternàries Cu2ZnSnS4 (CZTS) de kesterita mitjançant un dipòsit electroquímic d'un sol pas seguit d'un recuit a baixa temperatura. La influència de diferents atmosferes de recuit a temps de recuit constants (t = 45 min) i paràmetres de control de preparació fixos; és a dir, concentració de la solució de materials de partida (sals de metalls precursors), temps de deposició i potencial d'electrodeposició. Es van estudiar les propietats estructurals, de composició, morfològiques i òptiques, així com les propietats fotoelectroquímiques / Kamal Abdelhamied Saber, S. (2018). Synthesis and characterization of some nano-selenides and their applications in solar cells [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/107389 / TESIS