A new multiple-gate transistor, the SOI MOS-JFET, is presented. This device combines the MOS field effect and junction field effect within one transistor body. Measured I-V characteristics are provided to illustrate typical modes of operation and the functionality associated with each gate. Two-dimensional simulations of the device?s cross-section will be presented to illustrate various conduction modes under different bias conditions. Test results indicate the MOS-JFET is well suited for both high-voltage and low-voltage circuit demands for systems-on-a-chip applications on SOI technology. Analog building-block circuits based the MOS-JFET are also presented.