Thesis (M.S. in Combat Systems Science and Technology)--Naval Postgraduate School, December 2009. / Thesis Advisor: Haegel, Nacy M. Second Reader: Karunasiri, Gamani. "December 2009." Description based on title screen as viewed on January 26, 2010. Author(s) subject terms: Minority charge carrier, diffusion length, GaN, nanowires, EBIC. Includes bibliographical references (p. 71-73). Also available in print.

Thesis (Ph. D.)--University of Hong Kong, 2010. / Includes bibliographical references (leaves 270-275). Also available in print.

Thesis (M.S.)--Oregon State University, 2010. / Printout. Includes bibliographical references (leaves 78-85). Also available on the World Wide Web.

Using the vapor-liquid-solid (VLS) growth method, silicon nanowires and germanium nanowires are grown. We find the high growth rate is responsible for the silicon nanowires with less growth defects when they are grown by use of silicon tetrachloride as a precursor and hydrogen as a carrier gas. Based on this funding, large area, high aspect ratio, h111i oriented silicon nanowires are successfully grown on Si (111) and Si (100). Novel growth mechanisms of VLS growth method were discovered in SiOx nanoflowers and silicon nanocones. In SiOx nanoflowers grown at the tip of silicon nanowires, it is found that they are produced via the enhanced oxidation of silicon at the gold-silicon interface. Furthermore, the analysis of the flower pattern reveals that it is the observation of the dense branching morphology on nanoscale and on spherical geometry. For the silicon nanocones, they are grown by the in situ etching of the catalysts of Ga/Al by HCl during the growth. Scanning electron microscopy (SEM), transmission electron microscopy (TEM) reveal that the nanocones are composed of amorphous silicon oxides and crystalline Si. Based on the similar chemistry of hydrogen reduction of SiCl₄ for the growth of silicon nanowires, single crystalline germanium nanowires are grown by use of GeCl4 as a precursor and H₂ as a carrier gas. As one of important application of one dimensional nanostructures, the field emission properties of 1-D nanostructures are explored. The field emission properties of a single graphite nanocone are measured in SEM. The inter-electrode separation is controlled using scanning tunneling microscopy (STM) approach method, allowing the precise and ne determination of the separation. Its Fowler-Nordheim plot shows it emits currents in accordance with the Fowler-Nordheim field emission. Its onset voltage, field enhancement factor show that its basic field emission parameters are comparable to those of a single carbon nanotube. It is observed that single nanocone is damaged after emitting a current of about 100 nA, which seems to be due to its hollow interior structure. / text

A great deal of attention has been paid to semiconductor nanowires due to their compatibility of conventional silicon-based technology. Metal-catalytic vapor-liquidsolid (VLS) and various solution-based techniques have widely been used to synthesize silicon/germanium (Si/Ge) nanowires. It is well characterized that the crystallographic orientations, diameter sizes, and surface morphologies of semiconductor nanowires can be controlled by varying process conditions and metal catalysts. Earlier experimental and theoretical studies have identified mechanism underlying metal catalyzed Si/Ge nanowire growth, involving Si/Ge diffusion into a metal catalyst, eutectic Si/Ge-catalyst alloy formation, and Si/Ge precipitation at the catalyst-nanowire interface. However, little is known about the atomic-level details of the structure, energetics and dynamics of amorphous metal alloys such as gold-silicon (Au-Si) and gold-germanium (Au-Ge) despite their importance for well controlled synthesis of Si/Ge nanowires, which is essential for the success of Si/Ge nanowires-based applications. Experiments provide many clues to the fundamental aspects of the behavior and properties of metal alloys, but their interpretations often remain controversial due largely to difficulties in direct characterization. While current experimental techniques are still limited to providing complementary atomic-level, real space information, first principles based atomistic modeling has emerged as a powerful means to address the structure, function and properties of amorphous metallic alloys. This thesis work has focused on developing a detailed understanding of the atomic structure, energetics, and oxidation of Au-Si alloys, as well as molecular mechanisms underlying Au-catalyzed Si nanowire growth. In addition, the surface reconstruction and chemistry of Si nanowires has been examined, with comparisons to planar Si surfaces. In this dissertation, based on first principles atomistic simulations, we present: 1) the atomic structure, energetics, and chemical ordering of amorphous Au-Si alloys with varying Au:Si composition ratios; 2) the behavior of boron (B) in the Au-Si alloy, such as diffusion and agglomeration, and the effect of B addition on the atomic distribution of Si and Au, with implications for in-situ doping of Si nanowires; 3) the origin and structural ordering of Si surface segregation in the Au-Si alloy, providing important insights into the nucleation and early-stage growth of Si nanowires; 4) the interfacial interaction between the Au-Si alloy and various facets of crystalline Si, such as (111), (211), (110), (110), which explains well the underlying reasons for the growth direction of Si nanowires; 5) the oxidation of the Au-Si alloy; and 6) the surface reconstruction and chemistry of Si nanowires with comparisons to planar Si surfaces. Outcomes from the thesis work contribute to: clarifying the atomic structure, energetics and chemical ordering of amorphous bulk Au-Si alloys, as well as their surfaces and interfaces; better understanding molecular mechanisms underlying the Aucatalyzed synthesis of Si nanowires; and identifying the surface reconstruction and chemistry of Si nanowires. The improved understanding can provide invaluable guidance on the rational design and fabrication of Si nanowire-based future electronic, chemical, and biological devices. This thesis work also offers a theoretical platform for studying metal alloy systems with various applications. / text

published_or_final_version / Chemistry / Doctoral / Doctor of Philosophy

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Silicon nanowires have great potential for applications in electronics, photovoltaics and biomedical applications, but as of yet, silicon nanowires are not used in any commercial application. More characterization is needed to better understand and control their surfaces and electronic properties. Here, electron energy loss spectroscopy (EELS) is used to characterize silicon nanowires made by the supercritical-fluid-liquid-solid process. EELS is able to analyze the elemental composition of core and shell structures with high spatial resolution. Additionally, the biocompatibility and antibacterial properties of silicon nanowires are assessed for potential bioapplications. Preliminary investigations suggest that nanowires have an anti-proliferative effect on E. coli and discourage adhesion of mammalian cells. Future investigations may prove that silicon nanowires are a promising material for biomedical implant coatings to prevent biofouling. / text

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